John H. Scofield
John H. Scofield
Professor of Physics, Oberlin College
Adresse e-mail validée de oberlin.edu - Page d'accueil
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Reproducible technique for fabrication of thin films of high transition temperature superconductors
PM Mankiewich, JH Scofield, WJ Skocpol, RE Howard, AH Dayem, ...
Applied physics letters 51 (21), 1753-1755, 1987
5351987
Sputtered molybdenum bilayer back contact for copper indium diselenide-based polycrystalline thin-film solar cells
JH Scofield, A Duda, D Albin, BL Ballard, PK Predecki
Thin solid films 260 (1), 26-31, 1995
4591995
Do LEED-certified buildings save energy? Not really…
JH Scofield
Energy and Buildings 41 (12), 1386-1390, 2009
4032009
Frequency‐domain description of a lock‐in amplifier
JH Scofield
American journal of physics 62 (2), 129-133, 1994
2871994
ac method for measuring low‐frequency resistance fluctuation spectra
JH Scofield
Review of scientific instruments 58 (6), 985-993, 1987
2471987
1/f noise and radiation effects in MOS devices
DM Fleetwood, TL Meisenheimer, JH Scofield
IEEE Transactions on Electron Devices 41 (11), 1953-1964, 1994
2271994
Efficacy of LEED-certification in reducing energy consumption and greenhouse gas emission for large New York City office buildings
JH Scofield
Energy and Buildings 67, 517-524, 2013
1972013
Evidence that similar point defects cause 1/f noise and radiation-induced-hole trapping in metal-oxide-semiconductor transistors
DM Fleetwood, JH Scofield
Physical review letters 64 (5), 579, 1990
1951990
High efficiency Cu (In, Ga) Se/sub 2/-based solar cells: processing of novel absorber structures
MA Contreras, J Tuttle, A Gabor, A Tennant, K Ramanathan, S Asher, ...
Proceedings of 1994 IEEE 1st World Conference on Photovoltaic Energy …, 1994
1581994
Reconciliation of different gate-voltage dependencies of 1/f noise in n-MOS and p-MOS transistors
JH Scofield, N Borland, DM Fleetwood
IEEE Transactions on Electron Devices 41 (11), 1946-1952, 1994
1461994
1/f noise of metals: A case for extrinsic origin
JH Scofield, JV Mantese, WW Webb
Physical Review B 32 (2), 736, 1985
1131985
How America can look within to achieve energy security and reduce global warming
B Richter, D Goldston, G Crabtree, L Glicksman, D Goldstein, D Greene, ...
Reviews of Modern Physics 80 (4), S1, 2008
1002008
Effects of series resistance and inductance on solar cell admittance measurements
JH Scofield
Solar energy materials and solar cells 37 (2), 217-233, 1995
991995
Physical basis for nondestructive tests of MOS radiation hardness
JH Scofield, DM Fleetwood
IEEE transactions on nuclear science 38 (6), 1567-1577, 1991
911991
Correlation between preirradiation 1/f noise and postirradiation oxide-trapped charge in MOS transistors
JH Scofield, TP Doerr, DM Fleetwood
IEEE Transactions on Nuclear Science 36 (6), 1946-1953, 1989
831989
A re-examination of the NBI LEED building energy consumption study
JH Scofield
International energy program evaluation conference, Portland, OR, 2009
652009
Early performance of a green academic building
JH Scofield
Transactions-American Society of Heating Refrigerating and Air Conditioning …, 2002
652002
Resistance fluctuations due to hydrogen diffusion in niobium thin films
JH Scofield, WW Webb
Physical review letters 54 (4), 353, 1985
561985
Temperature-independent switching rates for a random telegraph signal in a silicon metal–oxide–semiconductor field-effect transistor at low temperatures
JH Scofield, N Borland, DM Fleetwood
Applied Physics Letters 76 (22), 3248-3250, 2000
532000
Temperature dependence of noise processes in metals
JH Scofield, JV Mantese, WW Webb
Physical Review B 34 (2), 723, 1986
481986
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