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Maarten Van de Put
Maarten Van de Put
Verified email at imec.be
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Year
Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk
A Laturia, ML Van de Put, WG Vandenberghe
npj 2D Materials and Applications 2 (1), 6, 2018
8122018
Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview
G Gaddemane, WG Vandenberghe, ML Van de Put, S Chen, S Tiwari, ...
992018
Identification of two-dimensional layered dielectrics from first principles
MR Osanloo, ML Van de Put, A Saadat, WG Vandenberghe
Nature communications 12 (1), 5051, 2021
662021
Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers
S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe
npj 2D Materials and Applications 5 (1), 54, 2021
642021
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models
Q Smets, D Verreck, AS Verhulst, R Rooyackers, C Merckling, ...
Journal of Applied Physics 115 (18), 2014
612014
Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study
A Kramer, ML Van de Put, CL Hinkle, WG Vandenberghe
npj 2D Materials and Applications 4 (1), 10, 2020
572020
Master-equation study of quantum transport in realistic semiconductor devices including electron-phonon and surface-roughness scattering
PB Vyas, ML Van de Put, MV Fischetti
Physical Review Applied 13 (1), 014067, 2020
492020
Critical behavior of the ferromagnets , and and the antiferromagnet : A detailed first-principles study
S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe
Physical Review B 103 (1), 014432, 2021
442021
New Verbeekite-type polymorphic phase and rich phase diagram in the system
W Liu, MR Osanloo, X Wang, S Li, N Dhale, H Wu, ML Van de Put, ...
Physical Review B 104 (2), 024507, 2021
412021
Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal …
G Gaddemane, S Gopalan, ML Van de Put, MV Fischetti
Journal of computational electronics 20, 49-59, 2021
402021
Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors
MR Osanloo, A Saadat, ML Van de Put, A Laturia, WG Vandenberghe
Nanoscale 14 (1), 157-165, 2022
372022
Monte-Carlo study of electronic transport in non-σh-symmetric two-dimensional materials: Silicene and germanene
G Gaddemane, WG Vandenberghe, ML Van de Put, E Chen, MV Fischetti
Journal of Applied Physics 124 (4), 2018
372018
Tensile strained Ge tunnel field-effect transistors: k· p material modeling and numerical device simulation
KH Kao, AS Verhulst, M Van de Put, WG Vandenberghe, B Soree, ...
Journal of Applied Physics 115 (4), 2014
362014
Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials
ML Van de Put, MV Fischetti, WG Vandenberghe
Computer Physics Communications 244, 156-169, 2019
342019
Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy
S Tiwari, J Vanherck, ML Van de Put, WG Vandenberghe, B Sorée
Physical Review Research 3 (4), 043024, 2021
302021
Efficient solution of the Wigner-Liouville equation using a spectral decomposition of the force field
ML Van de Put, B Sorée, W Magnus
Journal of Computational Physics 350, 314-325, 2017
282017
“Hot electrons in Si lose energy mostly to optical phonons”: Truth or myth?
MV Fischetti, PD Yoder, MM Khatami, G Gaddemane, ML Van De Put
Applied Physics Letters 114 (22), 2019
272019
Uniform strain in heterostructure tunnel field-effect transistors
D Verreck, AS Verhulst, ML Van de Put, B Sorée, N Collaert, A Mocuta, ...
IEEE electron device letters 37 (3), 337-340, 2016
272016
Perspective of tunnel-FET for future low-power technology nodes
AS Verhulst, D Verreck, Q Smets, KH Kao, M Van de Put, R Rooyackers, ...
2014 IEEE International Electron Devices Meeting, 30.2. 1-30.2. 4, 2014
262014
Channel length scaling limit for LDMOS field-effect transistors: Semi-classical and quantum analysis
A Saadat, PB Vyas, ML Van de Put, MV Fischetti, H Edwards, ...
2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020
252020
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