| Dielectric properties of hexagonal boron nitride and transition metal dichalcogenides: from monolayer to bulk A Laturia, ML Van de Put, WG Vandenberghe npj 2D Materials and Applications 2 (1), 6, 2018 | 774 | 2018 |
| Theoretical studies of electronic transport in monolayer and bilayer phosphorene: A critical overview G Gaddemane, WG Vandenberghe, ML Van de Put, S Chen, S Tiwari, ... | 98 | 2018 |
| InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models Q Smets, D Verreck, AS Verhulst, R Rooyackers, C Merckling, ... Journal of Applied Physics 115 (18), 2014 | 60 | 2014 |
| Identification of two-dimensional layered dielectrics from first principles MR Osanloo, ML Van de Put, A Saadat, WG Vandenberghe Nature communications 12 (1), 5051, 2021 | 59 | 2021 |
| Magnetic order and critical temperature of substitutionally doped transition metal dichalcogenide monolayers S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe npj 2D Materials and Applications 5 (1), 54, 2021 | 58 | 2021 |
| Tellurium as a successor of silicon for extremely scaled nanowires: a first-principles study A Kramer, ML Van de Put, CL Hinkle, WG Vandenberghe npj 2D Materials and Applications 4 (1), 10, 2020 | 51 | 2020 |
| Master-equation study of quantum transport in realistic semiconductor devices including electron-phonon and surface-roughness scattering PB Vyas, ML Van de Put, MV Fischetti Physical Review Applied 13 (1), 014067, 2020 | 43 | 2020 |
| Critical behavior of the ferromagnets , and and the antiferromagnet : A detailed first-principles study S Tiwari, ML Van de Put, B Sorée, WG Vandenberghe Physical Review B 103 (1), 014432, 2021 | 42 | 2021 |
| Limitations of ab initio methods to predict the electronic-transport properties of two-dimensional semiconductors: the computational example of 2H-phase transition metal … G Gaddemane, S Gopalan, ML Van de Put, MV Fischetti Journal of computational electronics 20, 49-59, 2021 | 39 | 2021 |
| New Verbeekite-type polymorphic phase and rich phase diagram in the system W Liu, MR Osanloo, X Wang, S Li, N Dhale, H Wu, ML Van de Put, ... Physical Review B 104 (2), 024507, 2021 | 35 | 2021 |
| Monte-Carlo study of electronic transport in non-σh-symmetric two-dimensional materials: Silicene and germanene G Gaddemane, WG Vandenberghe, ML Van de Put, E Chen, MV Fischetti Journal of Applied Physics 124 (4), 2018 | 35 | 2018 |
| Tensile strained Ge tunnel field-effect transistors: k· p material modeling and numerical device simulation KH Kao, AS Verhulst, M Van de Put, WG Vandenberghe, B Soree, ... Journal of Applied Physics 115 (4), 2014 | 34 | 2014 |
| Transition-metal nitride halide dielectrics for transition-metal dichalcogenide transistors MR Osanloo, A Saadat, ML Van de Put, A Laturia, WG Vandenberghe Nanoscale 14 (1), 157-165, 2022 | 31 | 2022 |
| Scalable atomistic simulations of quantum electron transport using empirical pseudopotentials ML Van de Put, MV Fischetti, WG Vandenberghe Computer Physics Communications 244, 156-169, 2019 | 31 | 2019 |
| Computing Curie temperature of two-dimensional ferromagnets in the presence of exchange anisotropy S Tiwari, J Vanherck, ML Van de Put, WG Vandenberghe, B Sorée Physical Review Research 3 (4), 043024, 2021 | 28 | 2021 |
| Efficient solution of the Wigner-Liouville equation using a spectral decomposition of the force field ML Van de Put, B Sorée, W Magnus Journal of Computational Physics 350, 314-325, 2017 | 27 | 2017 |
| Uniform strain in heterostructure tunnel field-effect transistors D Verreck, AS Verhulst, ML Van de Put, B Sorée, N Collaert, A Mocuta, ... IEEE electron device letters 37 (3), 337-340, 2016 | 27 | 2016 |
| Perspective of tunnel-FET for future low-power technology nodes AS Verhulst, D Verreck, Q Smets, KH Kao, M Van de Put, R Rooyackers, ... 2014 IEEE International Electron Devices Meeting, 30.2. 1-30.2. 4, 2014 | 26 | 2014 |
| “Hot electrons in Si lose energy mostly to optical phonons”: Truth or myth? MV Fischetti, PD Yoder, MM Khatami, G Gaddemane, ML Van De Put Applied Physics Letters 114 (22), 2019 | 25 | 2019 |
| Channel length scaling limit for LDMOS field-effect transistors: Semi-classical and quantum analysis A Saadat, PB Vyas, ML Van de Put, MV Fischetti, H Edwards, ... 2020 32nd International Symposium on Power Semiconductor Devices and ICs …, 2020 | 24 | 2020 |
William VandenbergheAssociate Professor at U.T. Dallas, dept. Materials Science & EngineeringVerified email at utdallas.edu
