| Ferroelectric control of a Mott insulator H Yamada, M Marinova, P Altuntas, A Crassous, L Bégon-Lours, S Fusil, ... Scientific reports 3 (1), 2834, 2013 | 66 | 2013 |
| Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights M Halter, L Bégon-Lours, V Bragaglia, M Sousa, BJ Offrein, S Abel, ... ACS applied materials & interfaces 12 (15), 17725-17732, 2020 | 58 | 2020 |
| Stabilization of phase-pure rhombohedral in pulsed laser deposited thin films L Bégon-Lours, M Mulder, P Nukala, S De Graaf, YA Birkhölzer, B Kooi, ... Physical Review Materials 4 (4), 043401, 2020 | 26 | 2020 |
| Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition C Zacharaki, P Tsipas, S Chaitoglou, L Bégon-Lours, M Halter, ... Applied Physics Letters 117 (21), 212905, 2020 | 20 | 2020 |
| A non-linear model of sensitivity matrix for electrical capacitance tomography G Villares, L Begon-Lours, C Margo, Y Oussar, J Lucas, S Holé 2012 Annual Meeting of the Electrostatics Society of America, 00-00, 2012 | 18 | 2012 |
| Analog resistive switching in BEOL, ferroelectric synaptic weights L Bégon-Lours, M Halter, Y Popoff, Z Yu, DF Falcone, D Davila, ... IEEE Journal of the Electron Devices Society 9, 1275-1281, 2021 | 9 | 2021 |
| High-temperature-superconducting weak link defined by the ferroelectric field effect L Bégon-Lours, V Rouco, A Sander, J Trastoy, R Bernard, E Jacquet, ... Physical Review Applied 7 (6), 064015, 2017 | 9 | 2017 |
| Ferroelectric, Analog Resistive Switching in Back‐End‐of‐Line Compatible TiN/HfZrO4/TiOx Junctions L Bégon-Lours, M Halter, Y Popoff, BJ Offrein physica status solidi (RRL)–Rapid Research Letters 15 (5), 2000524, 2021 | 7 | 2021 |
| A back-end-of-line compatible, ferroelectric analog non-volatile memory L Bégon-Lours, M Halter, DD Pineda, V Bragaglia, Y Popoff, A La Porta, ... 2021 IEEE International Memory Workshop (IMW), 1-4, 2021 | 6 | 2021 |
| Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware L Bégon‐Lours, M Halter, FM Puglisi, L Benatti, DF Falcone, Y Popoff, ... Advanced Electronic Materials 8 (6), 2101395, 2022 | 4 | 2022 |
| Factors limiting ferroelectric field-effect doping in complex oxide heterostructures L Bégon-Lours, V Rouco, Q Qiao, A Sander, MA Roldán, R Bernard, ... Physical Review Materials 2 (8), 084405, 2018 | 4 | 2018 |
| A BEOL compatible, 2-terminals, ferroelectric analog non-volatile memory L Bégon-Lours, M Halter, DD Pineda, Y Popoff, V Bragaglia, A La Porta, ... 2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021 | 3 | 2021 |
| Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights L Bégon-Lours, M Halter, M Sousa, Y Popoff, DD Pineda, DF Falcone, ... Neuromorphic Computing and Engineering 2 (2), 024001, 2022 | 2 | 2022 |
| High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor L Bégon-Lours, M Halter, Y Popoff, Z Yu, DF Falcone, BJ Offrein ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), 87-90, 2021 | 2 | 2021 |
| Ferroelectric field-effects in high-tc superconducting devices L Bégon-Lours Paris 6, 2017 | 2 | 2017 |
| From Ferroelectric Material Optimization to Neuromorphic Devices T Mikolajick, MH Park, L Begon‐Lours, S Slesazeck Advanced Materials, 2206042, 2022 | 1 | 2022 |
| Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states T Stecconi, Y Popoff, R Guido, M Halter, D Falcone, A La Porta, F Horst, ... 2022 Device Research Conference (DRC), 1-2, 2022 | 1 | 2022 |
| Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memories N Siannas, C Zacharaki, P Tsipas, S Chaitoglou, L Begon-Lours, ... ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021 | 1 | 2021 |
| Filament-metal oxide channel exchange resistive memory device L Bégon-Lours, V Bragaglia, J Fompeyrine, A La Porta, M Halter US Patent App. 17/347,898, 2022 | | 2022 |
| Physical modeling of HZO-based ferroelectric field-effect transistors with a WO x channel X Wen, M Halter, L Bégon-Lours, M Luisier Frontiers in Nanotechnology, 2022 | | 2022 |
