Laura Bégon-Lours
Laura Bégon-Lours
Post-doctoral researcher, IBM Research
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Ferroelectric control of a Mott insulator
H Yamada, M Marinova, P Altuntas, A Crassous, L Bégon-Lours, S Fusil, ...
Scientific reports 3 (1), 2834, 2013
Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights
M Halter, L Bégon-Lours, V Bragaglia, M Sousa, BJ Offrein, S Abel, ...
ACS applied materials & interfaces 12 (15), 17725-17732, 2020
Stabilization of phase-pure rhombohedral in pulsed laser deposited thin films
L Bégon-Lours, M Mulder, P Nukala, S De Graaf, YA Birkhölzer, B Kooi, ...
Physical Review Materials 4 (4), 043401, 2020
Reliability aspects of ferroelectric TiN/Hf0.5Zr0.5O2/Ge capacitors grown by plasma assisted atomic oxygen deposition
C Zacharaki, P Tsipas, S Chaitoglou, L Bégon-Lours, M Halter, ...
Applied Physics Letters 117 (21), 212905, 2020
A non-linear model of sensitivity matrix for electrical capacitance tomography
G Villares, L Begon-Lours, C Margo, Y Oussar, J Lucas, S Holé
2012 Annual Meeting of the Electrostatics Society of America, 00-00, 2012
Analog resistive switching in BEOL, ferroelectric synaptic weights
L Bégon-Lours, M Halter, Y Popoff, Z Yu, DF Falcone, D Davila, ...
IEEE Journal of the Electron Devices Society 9, 1275-1281, 2021
High-temperature-superconducting weak link defined by the ferroelectric field effect
L Bégon-Lours, V Rouco, A Sander, J Trastoy, R Bernard, E Jacquet, ...
Physical Review Applied 7 (6), 064015, 2017
Ferroelectric, Analog Resistive Switching in Back‐End‐of‐Line Compatible TiN/HfZrO4/TiOx Junctions
L Bégon-Lours, M Halter, Y Popoff, BJ Offrein
physica status solidi (RRL)–Rapid Research Letters 15 (5), 2000524, 2021
A back-end-of-line compatible, ferroelectric analog non-volatile memory
L Bégon-Lours, M Halter, DD Pineda, V Bragaglia, Y Popoff, A La Porta, ...
2021 IEEE International Memory Workshop (IMW), 1-4, 2021
Scaled, Ferroelectric Memristive Synapse for Back‐End‐of‐Line Integration with Neuromorphic Hardware
L Bégon‐Lours, M Halter, FM Puglisi, L Benatti, DF Falcone, Y Popoff, ...
Advanced Electronic Materials 8 (6), 2101395, 2022
Factors limiting ferroelectric field-effect doping in complex oxide heterostructures
L Bégon-Lours, V Rouco, Q Qiao, A Sander, MA Roldán, R Bernard, ...
Physical Review Materials 2 (8), 084405, 2018
A BEOL compatible, 2-terminals, ferroelectric analog non-volatile memory
L Bégon-Lours, M Halter, DD Pineda, Y Popoff, V Bragaglia, A La Porta, ...
2021 5th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2021
Effect of cycling on ultra-thin HfZrO4, ferroelectric synaptic weights
L Bégon-Lours, M Halter, M Sousa, Y Popoff, DD Pineda, DF Falcone, ...
Neuromorphic Computing and Engineering 2 (2), 024001, 2022
High-Conductance, Ohmic-like HfZrO4 Ferroelectric Memristor
L Bégon-Lours, M Halter, Y Popoff, Z Yu, DF Falcone, BJ Offrein
ESSCIRC 2021-IEEE 47th European Solid State Circuits Conference (ESSCIRC), 87-90, 2021
Ferroelectric field-effects in high-tc superconducting devices
L Bégon-Lours
Paris 6, 2017
From Ferroelectric Material Optimization to Neuromorphic Devices
T Mikolajick, MH Park, L Begon‐Lours, S Slesazeck
Advanced Materials, 2206042, 2022
Equivalent electrical circuit modelling of a TaOx/HfOx based RRAM with optimized resistance window and multilevel states
T Stecconi, Y Popoff, R Guido, M Halter, D Falcone, A La Porta, F Horst, ...
2022 Device Research Conference (DRC), 1-2, 2022
Scaling ferroelectric HZO thickness for low power Ge MFS-FTJ memories
N Siannas, C Zacharaki, P Tsipas, S Chaitoglou, L Begon-Lours, ...
ESSDERC 2021-IEEE 51st European Solid-State Device Research Conference …, 2021
Filament-metal oxide channel exchange resistive memory device
L Bégon-Lours, V Bragaglia, J Fompeyrine, A La Porta, M Halter
US Patent App. 17/347,898, 2022
Physical modeling of HZO-based ferroelectric field-effect transistors with a WO x channel
X Wen, M Halter, L Bégon-Lours, M Luisier
Frontiers in Nanotechnology, 2022
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