| High endurance ferroelectric hafnium oxide-based FeFET memory without retention penalty T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 65 (9), 3769-3774, 2018 | 229 | 2018 |
| Silicon doped hafnium oxide (HSO) and hafnium zirconium oxide (HZO) based FeFET: A material relation to device physics T Ali, P Polakowski, S Riedel, T Büttner, T Kämpfe, M Rudolph, B Pätzold, ... Applied Physics Letters 112 (22), 2018 | 126 | 2018 |
| FeFET: A versatile CMOS compatible device with game-changing potential S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 114 | 2020 |
| A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage T Ali, P Polakowski, K Kühnel, M Czernohorsky, T Kämpfe, M Rudolph, ... 2019 IEEE International Electron Devices Meeting (IEDM), 28.7. 1-28.7. 4, 2019 | 104 | 2019 |
| Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD M Lederer, T Kämpfe, R Olivo, D Lehninger, C Mart, S Kirbach, T Ali, ... Applied Physics Letters 115 (22), 2019 | 102 | 2019 |
| Back‐End‐of‐Line Compatible Low Temperature Furnace Anneal for Ferroelectric Hafnium Zirconium Oxide Formation D Lehninger, R Olivo, T Ali, M Lederer, T Kämpfe, C Mart, K Biedermann, ... physica status solidi (a), 2020 | 97 | 2020 |
| SoC compatible 1T1C FeRAM memory array based on ferroelectric Hf0. 5Zr0. 5O2 J Okuno, T Kunihiro, K Konishi, H Maemura, Y Shuto, F Sugaya, ... 2020 IEEE Symposium on VLSI Technology, 1-2, 2020 | 93 | 2020 |
| Ultra-Low Power Flexible Precision FeFET Based Analog In-Memory Computing T Soliman, F Müller, T Kirchner, T Hoffmann, H Ganem, E Karimov, T Ali, ... | 82 | 2021 |
| Ferroelectric field effect transistors as a synapse for neuromorphic application M Lederer, T Kämpfe, T Ali, F Müller, R Olivo, R Hoffmann, N Laleni, ... IEEE Transactions on Electron Devices 68 (5), 2295-2300, 2021 | 70 | 2021 |
| A Scalable Design of Multi-Bit Ferroelectric Content Addressable Memory for Data-Centric Computing C Li, F Müller, T Ali, R Olivo, M Imani, S Deng, C Zhuo, T Kämpfe, X Yin, ... | 66 | 2021 |
| Structural and electrical comparison of Si and Zr doped hafnium oxide thin films and integrated FeFETs utilizing transmission Kikuchi diffraction M Lederer, T Kämpfe, N Vogel, D Utess, B Volkmann, T Ali, R Olivo, ... Nanomaterials 10 (2), 384, 2020 | 56 | 2020 |
| Random and Systematic Variation in Nanoscale Hf0. 5Zr0. 5O2 Ferroelectric FinFETs: Physical Origin and Neuromorphic Circuit Implications S De, A Baig, BH Qiu, F Müller, HH Le, M Lederer, T Kämpfe, T Ali, ... Frontiers in Nanotechnology, 108, 2022 | 42 | 2022 |
| Interplay Between Switching and Retention in HfO2-Based Ferroelectric FETs H Mulaosmanovic, F Müller, M Lederer, T Ali, R Hoffmann, K Seidel, ... IEEE Transactions on Electron Devices 67 (8), 3466-3471, 2020 | 39 | 2020 |
| High-endurance and low-voltage operation of 1T1C FeRAM arrays for nonvolatile memory application J Okuno, T Kunihiro, K Konishi, H Maemura, Y Shuto, F Sugaya, ... 2021 IEEE International Memory Workshop (IMW), 1-3, 2021 | 37 | 2021 |
| Read-optimized 28nm hkmg multibit fefet synapses for inference-engine applications S De, F Müller, HH Le, M Lederer, Y Raffel, T Ali, D Lu, T Kämpfe IEEE Journal of the Electron Devices Society 10, 637-641, 2022 | 35 | 2022 |
| A Fully Integrated Ferroelectric Thin‐Film‐Transistor–Influence of Device Scaling on Threshold Voltage Compensation in Displays D Lehninger, M Ellinger, T Ali, S Li, K Mertens, M Lederer, R Olivio, ... Advanced Electronic Materials, 2100082, 2021 | 35 | 2021 |
| 1T1C FeRAM memory array based on ferroelectric HZO with capacitor under bitline J Okuno, T Kunihiro, K Konishi, M Materano, T Ali, K Kuehnel, K Seidel, ... IEEE Journal of the Electron Devices Society 10, 29-34, 2021 | 32 | 2021 |
| Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices F Ali, T Ali, D Lehninger, A Sünbül, A Viegas, R Sachdeva, A Abbas, ... Advanced Functional Materials 32 (27), 2201737, 2022 | 31 | 2022 |
| 28 nm hkmg-based current limited fefet crossbar-array for inference application S De, F Müller, S Thunder, S Abdulazhanov, N Laleni, M Lederer, T Ali, ... IEEE Transactions on Electron Devices 69 (12), 7194-7198, 2022 | 27 | 2022 |
| Demonstration of Multiply-Accumulate Operation with 28 nm FeFET Crossbar Array S De, F Muller, N Laleni, M Lederer, Y Raffel, S Mojumder, A Vardar, ... | 24 | 2022 |
