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Aaron Thean
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Technology roadmap for flexible sensors
Y Luo, MR Abidian, JH Ahn, D Akinwande, AM Andrews, M Antonietti, ...
ACS nano 17 (6), 5211-5295, 2023
2752023
Gate-all-around MOSFETs based on vertically stacked horizontal Si nanowires in a replacement metal gate process on bulk Si substrates
H Mertens, R Ritzenthaler, A Hikavyy, MS Kim, Z Tao, K Wostyn, SA Chew, ...
2016 IEEE symposium on VLSI technology, 1-2, 2016
2152016
Vertical GAAFETs for the ultimate CMOS scaling
D Yakimets, G Eneman, P Schuddinck, TH Bao, MG Bardon, P Raghavan, ...
IEEE Transactions on Electron Devices 62 (5), 1433-1439, 2015
2032015
A Fully Printed Flexible MoS2 Memristive Artificial Synapse with Femtojoule Switching Energy
X Feng, Y Li, L Wang, S Chen, ZG Yu, WC Tan, N Macadam, G Hu, ...
Advanced Electronic Materials 5 (12), 1900740, 2019
1692019
Self-powered glove-based intuitive interface for diversified control applications in real/cyber space
T He, Z Sun, Q Shi, M Zhu, DV Anaya, M Xu, T Chen, MR Yuce, ...
Nano Energy 58, 641-651, 2019
1472019
Fabrication and Analysis of a Heterojunction Line Tunnel FET
AM Walke, A Vandooren, R Rooyackers, D Leonelli, A Hikavyy, R Loo, ...
IEEE Transactions on Electron Devices 61 (3), 707-715, 2014
1432014
CMOS vertical multiple independent gate field effect transistor (MIGFET)
L Mathew, Y Du, AVY Thean, M Sadd, A Vandooren, C Parker, ...
2004 IEEE International SOI Conference (IEEE Cat. No. 04CH37573), 187-189, 2004
1342004
All WSe2 1T1R resistive RAM cell for future monolithic 3D embedded memory integration
M Sivan, Y Li, H Veluri, Y Zhao, B Tang, X Wang, E Zamburg, JF Leong, ...
Nature communications 10 (1), 5201, 2019
1312019
A cost effective 32nm high-K/metal gate CMOS technology for low power applications with single-metal/gate-first process
X Chen, S Samavedam, V Narayanan, K Stein, C Hobbs, C Baiocco, W Li, ...
2008 symposium on vlsi technology, 88-89, 2008
1302008
Understanding energy efficiency benefits of carbon nanotube field-effect transistors for digital VLSI
G Hills, MG Bardon, G Doornbos, D Yakimets, P Schuddinck, R Baert, ...
IEEE Transactions on Nanotechnology 17 (6), 1259-1269, 2018
1222018
Heteroepitaxy of InP on Si (001) by selective-area metal organic vapor-phase epitaxy in sub-50 nm width trenches: The role of the nucleation layer and the recess engineering
C Merckling, N Waldron, S Jiang, W Guo, N Collaert, M Caymax, ...
Journal of Applied Physics 115 (2), 2014
1192014
InGaAs gate-all-around nanowire devices on 300mm Si substrates
N Waldron, C Merckling, L Teugels, P Ong, SAU Ibrahim, F Sebaai, ...
IEEE Electron Device Letters 35 (11), 1097-1099, 2014
1132014
An InGaAs/InP quantum well finfet using the replacement fin process integrated in an RMG flow on 300mm Si substrates
N Waldron, C Merckling, W Guo, P Ong, L Teugels, S Ansar, ...
2014 Symposium on VLSI Technology (VLSI-Technology): Digest of Technical …, 2014
1102014
Impact of Wire Geometry on Interconnect RC and Circuit Delay
I Ciofi, A Contino, PJ Roussel, R Baert, VH Vega-Gonzalez, K Croes, ...
IEEE Transactions on Electron Devices 63 (6), 2488-2496, 2016
1012016
Low temperature deposition of 2D WS 2 layers from WF 6 and H 2 S precursors: impact of reducing agents
A Delabie, M Caymax, B Groven, M Heyne, K Haesevoets, J Meersschaut, ...
Chemical Communications 51 (86), 15692-15695, 2015
982015
Self-heating on bulk FinFET from 14nm down to 7nm node
D Jang, E Bury, R Ritzenthaler, MG Bardon, T Chiarella, K Miyaguchi, ...
2015 IEEE International Electron Devices Meeting (IEDM), 11.6. 1-11.6. 4, 2015
952015
Flash memory: towards single-electronics
VY Aaron, JP Leburton
IEEE Potentials 21 (4), 35-41, 2002
942002
Polarity control in WSe2 double-gate transistors
GV Resta, S Sutar, Y Balaji, D Lin, P Raghavan, I Radu, F Catthoor, ...
Scientific reports 6 (1), 29448, 2016
912016
32nm general purpose bulk CMOS technology for high performance applications at low voltage
F Arnaud, J Liu, YM Lee, KY Lim, S Kohler, J Chen, BK Moon, CW Lai, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
842008
Wafer-scale solution-processed 2D material analog resistive memory array for memory-based computing
B Tang, H Veluri, Y Li, ZG Yu, M Waqar, JF Leong, M Sivan, E Zamburg, ...
Nature Communications 13 (1), 3037, 2022
822022
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