Neuroevolution machine learning potentials: Combining high accuracy and low cost in atomistic simulations and application to heat transport Z Fan, Z Zeng, C Zhang, Y Wang, K Song, H Dong, Y Chen, T Ala-Nissila
Physical Review B 104 (10), 104309, 2021
153 2021 Structural characteristics and strain behavior of two-dimensional C3N: First principles calculations LB Shi, YY Zhang, XM Xiu, HK Dong
Carbon 134, 103-111, 2018
107 2018 Homogeneous nonequilibrium molecular dynamics method for heat transport and spectral decomposition with many-body potentials Z Fan, H Dong, A Harju, T Ala-Nissila
Physical Review B 99 (6), 064308, 2019
106 2019 GPUMD: A package for constructing accurate machine-learned potentials and performing highly efficient atomistic simulations Z Fan, Y Wang, P Ying, K Song, J Wang, Y Wang, Z Zeng, K Xu, ...
The Journal of Chemical Physics 157 (11), 2022
99 2022 Equivalence of the equilibrium and the nonequilibrium molecular dynamics methods for thermal conductivity calculations: From bulk to nanowire silicon H Dong, Z Fan, L Shi, A Harju, T Ala-Nissila
Physical Review B 97 (9), 094305, 2018
80 2018 Nearly deterministic preparation of the perfect state with weak cross-Kerr nonlinearities L Dong, JX Wang, QY Li, HZ Shen, HK Dong, XM Xiu, YJ Gao, CH Oh
Physical Review A 93 (1), 012308, 2016
68 2016 First-principle study of structural, electronic, vibrational and magnetic properties of HCN adsorbed graphene doped with Cr, Mn and Fe LB Shi, YP Wang, HK Dong
Applied Surface Science 329, 330-336, 2015
66 2015 Deterministic secure quantum communication using four-particle genuine entangled state and entanglement swapping XM Xiu, HK Dong, L Dong, YJ Gao, F Chi
Optics communications 282 (12), 2457-2459, 2009
66 2009 Heat transport in pristine and polycrystalline single-layer hexagonal boron nitride H Dong, P Hirvonen, Z Fan, T Ala-Nissila
Physical chemistry chemical physics 20 (38), 24602-24612, 2018
39 2018 First principles calculations of the interface properties of a-Al2O3/MoS2 and effects of biaxial strain LB Shi, MB Li, XM Xiu, XY Liu, KC Zhang, YH Liu, CR Li, HK Dong
Journal of Applied Physics 121 (20), 2017
34 2017 Preparation of four-photon polarization-entangled decoherence-free states employing weak cross-Kerr nonlinearities XM Xiu, QY Li, YF Lin, HK Dong, L Dong, YJ Gao
Physical Review A 94 (4), 042321, 2016
33 2016 Atomistic insights into the mechanical anisotropy and fragility of monolayer fullerene networks using quantum mechanical calculations and machine-learning molecular dynamics … P Ying, H Dong, T Liang, Z Fan, Z Zhong, J Zhang
Extreme Mechanics Letters 58, 101929, 2023
30 2023 Ultrahigh convergent thermal conductivity of carbon nanotubes from comprehensive atomistic modeling G Barbalinardo, Z Chen, H Dong, Z Fan, D Donadio
Physical review letters 127 (2), 025902, 2021
28 2021 Anisotropic and high thermal conductivity in monolayer quasi-hexagonal fullerene: A comparative study against bulk phase fullerene H Dong, C Cao, P Ying, Z Fan, P Qian, Y Su
International Journal of Heat and Mass Transfer 206, 123943, 2023
27 2023 Thermal conductivity reduction in carbon nanotube by fullerene encapsulation: A molecular dynamics study H Dong, Z Fan, P Qian, T Ala-Nissila, Y Su
Carbon 161, 800-808, 2020
26 2020 Polarization Toffoli gate assisted by multiple degrees of freedom L Dong, SL Wang, C Cui, X Geng, QY Li, HK Dong, XM Xiu, YJ Gao
Optics Letters 43 (19), 4635-4638, 2018
24 2018 Single logical qubit information encoding scheme with the minimal optical decoherence-free subsystem L Dong, JX Wang, QY Li, HZ Shen, HK Dong, XM Xiu, YJ Gao
Optics Letters 41 (5), 1030-1033, 2016
24 2016 Teleportation of a general two-photon state employing a polarization-entangled state with nondemolition parity analyses L Dong, JX Wang, QY Li, HK Dong, XM Xiu, YJ Gao
Quantum Information Processing 15 (7), 2955-2970, 2016
22 2016 Nearly deterministic Fredkin gate based on weak cross-Kerr nonlinearities L Dong, YF Lin, JX Wang, QY Li, HZ Shen, HK Dong, YP Ren, XM Xiu, ...
JOSA B 33 (2), 253-260, 2016
21 2016 Impact of native defects in the high dielectric constant oxide HfSiO4 on MOS device performance HK Dong, LB Shi
Chinese Physics Letters 33 (1), 016101, 2016
19 2016