Gate-voltage tuning of chemical potential and weak antilocalization in Bi2Se3 LL J. Chen, H. J. Qin, F. Yang, J. Liu, T. Guan, F. M. Qu, G. H. Zhang, J. R ...
Physical Review Letters 105, 176602, 2010
779 * 2010 All‐solid‐state synaptic transistor with ultralow conductance for neuromorphic computing CS Yang, DS Shang, N Liu, EJ Fuller, S Agrawal, AA Talin, YQ Li, ...
Advanced Functional Materials 28 (42), 1804170, 2018
373 2018 A synaptic transistor based on quasi‐2D molybdenum oxide CS Yang, DS Shang, N Liu, G Shi, X Shen, RC Yu, YQ Li, Y Sun
Advanced Materials 29 (27), 1700906, 2017
368 2017 Tunable surface conductivity in Bi2Se3 revealed in diffusive electron transport YL J. Chen, X. Y. He, K. H. Wu, Z. Q. Ji, L. Lu, J. R. Shi, J. H. Smet
Physical Review B 83, 241304 (R), 2011
297 2011 Growth of topological insulator Bi2Se3 thin films on SrTiO3 with large tunability in chemical potential G Zhang, H Qin, J Chen, X He, L Lu, Y Li, K Wu
Advanced Functional Materials 21 (12), 2351-2355, 2011
150 2011 Transport in two-dimensional topological materials: recent developments in experiment and theory D Culcer, AC Keser, Y Li, G Tkachov
2D Materials 7 (2), 022007, 2020
109 2020 Highly tunable electron transport in epitaxial topological insulator (Bi1-xSbx)2Te3 thin films KW X. Y. He, T. Guan, X. X. Wang, B.J. Feng, P. Cheng, L. Chen, Yongqing Li
Applied Physics Letters 101, 123111, 2012
101 2012 Observation of Anderson Localization in Ultrathin Films of Three-Dimensional Topological Insulators YL Jian Liao, Yunbo Ou, Xiao Feng, Shuo Yang, Chaojing Lin, Wenmin Yang ...
Physical Review Letters 114, 216601, 2015
95 2015 Hall magnetometry on a single iron nanoparticle HO Yongqing Li, P. Xiong, S. von Molnár, S. Wirth, Y. Ohno
Applied Physics Letters 80, 4644, 2002
94 2002 Thickness Dependence of the Quantum Anomalous Hall Effect in Magnetic Topological Insulator Films. X Feng, Y Feng, J Wang, Y Ou, Z Hao, C Liu, Z Zhang, L Zhang, C Lin, ...
Advanced Materials (Deerfield Beach, Fla.) 28 (30), 6386-6390, 2016
86 2016 Giant semiclassical magnetoresistance in high mobility TaAs2 semimetal D Wu, J Liao, W Yi, X Wang, P Li, H Weng, Y Shi, Y Li, J Luo, X Dai, ...
Applied Physics Letters 108 (4), 2016
84 2016 Parallel field magnetoresistance in topological insulator thin films YL C. J. Lin, X. Y. He, J. Liao, X. X. Wang, V. Sacksteder IV, W. M. Yang, T ...
Physical Revfiew B 88 (4), 041307, 2013
79 * 2013 Evidence for Half-Metallicity in n-type HgCr2Se4 PX Tong Guan, Chaojing Lin, Chongli Yang, Youguo Shi, Cong Ren, Yongqing Li ...
Physical Review Letters 115 (8), 087002, 2015
75 * 2015 Cavity enhanced Faraday rotation of semiconductor quantum dots DDA Yongqing Li, D. W. Steuerman, J. Berezovsky, D. S. Seferos, G. C. Bazan
Applied Physics Letters 88, 193126, 2006
60 2006 Linear and Nonlinear Two-Terminal Spin-Valve Effect from Chirality-Induced Spin Selectivity PX Tianhan Liu, Xiaolei Wang, Hailong Wang, Gang Shi, Fan Gao, Honglei Feng ...
ACS Nano 14 (11), 15983–15991, 2020
59 2020 Large negative magnetoresistance of a nearly Dirac material: Layered antimonide C Yi, S Yang, M Yang, L Wang, Y Matsushita, S Miao, Y Jiao, J Cheng, ...
Physical Review B 96 (20), 205103, 2017
59 2017 Enhanced electron dephasing in three-dimensional topological insulators J Liao, Y Ou, H Liu, K He, X Ma, QK Xue, Y Li
Nature Communications 8, 16071, 2017
53 2017 Proximity effect between a topological insulator and a magnetic insulator with large perpendicular anisotropy YL W. M. Yang, S. Yang, Q. H. Zhang, Y. Xu, S. P. Shen, J. Liao, J. Teng, C ...
Applied Physics Letters 105, 092411, 2014
48 2014 Two-component anomalous Hall effect in a magnetically doped topological insulator N Liu, J Teng, Y Li
Nature communications 9 (1), 1282, 2018
45 2018 Modulation of noise in submicron GaAs/AlGaAs Hall devices by gating HO Yongqing Li, Cong Ren, Peng Xiong, Stephan von Molnár, Yuzo Ohno
Physical Review Letters 93 (24), 246602, 2004
45 * 2004