| A FeFET based super-low-power ultra-fast embedded NVM technology for 22nm FDSOI and beyond S Dünkel, M Trentzsch, R Richter, P Moll, C Fuchs, O Gehring, M Majer, ... 2017 IEEE International Electron Devices Meeting (IEDM), 19.7. 1-19.7. 4, 2017 | 455 | 2017 |
| A 28nm HKMG super low power embedded NVM technology based on ferroelectric FETs M Trentzsch, S Flachowsky, R Richter, J Paul, B Reimer, D Utess, ... 2016 IEEE International Electron Devices Meeting (IEDM), 11.5. 1-11.5. 4, 2016 | 357 | 2016 |
| Switching Kinetics in Nanoscale Hafnium Oxide Based Ferroelectric Field-Effect Transistors H Mulaosmanovic, J Ocker, S Mueller, U Schroeder, J Müller, ... ACS Applied Materials & Interfaces 9 (4), 3792–3798, 2017 | 292 | 2017 |
| Novel ferroelectric FET based synapse for neuromorphic systems H Mulaosmanovic, J Ocker, S Müller, M Noack, J Müller, P Polakowski, ... 2017 Symposium on VLSI Technology, T176-T177, 2017 | 243 | 2017 |
| Next generation ferroelectric materials for semiconductor process integration and their applications T Mikolajick, S Slesazeck, H Mulaosmanovic, MH Park, S Fichtner, ... Journal of Applied Physics 129 (10), 2021 | 235 | 2021 |
| Mimicking biological neurons with a nanoscale ferroelectric transistor H Mulaosmanovic, E Chicca, M Bertele, T Mikolajick, S Slesazeck Nanoscale 10 (46), 21755-21763, 2018 | 188 | 2018 |
| Ferroelectric field-effect transistors based on HfO2: a review H Mulaosmanovic, ET Breyer, S Dünkel, S Beyer, T Mikolajick, ... Nanotechnology 32 (50), 502002, 2021 | 171 | 2021 |
| Ferroelectric FETs With 20-nm-Thick HfO2 Layer for Large Memory Window and High Performance H Mulaosmanovic, ET Breyer, T Mikolajick, S Slesazeck IEEE Transactions on Electron Devices 66 (9), 3828-3833, 2019 | 141 | 2019 |
| Evidence of single domain switching in hafnium oxide based FeFETs: Enabler for multi-level FeFET memory cells H Mulaosmanovic, S Slesazeck, J Ocker, M Pesic, S Muller, S Flachowsky, ... 2015 IEEE International Electron Devices Meeting (IEDM), 26.8. 1-26.8. 3, 2015 | 138 | 2015 |
| Domain pinning: Comparison of hafnia and PZT based ferroelectrics FPG Fengler, M Pešić, S Starschich, T Schneller, C Künneth, U Böttger, ... Advanced Electronic Materials 3 (4), 1600505, 2017 | 124 | 2017 |
| Ferroelectricity in doped hafnium oxide: materials, properties and devices U Schroeder, CS Hwang, H Funakubo Woodhead Publishing, 2019 | 123 | 2019 |
| FeFET: A versatile CMOS compatible device with game-changing potential S Beyer, S Dünkel, M Trentzsch, J Müller, A Hellmich, D Utess, J Paul, ... 2020 IEEE International Memory Workshop (IMW), 1-4, 2020 | 114 | 2020 |
| Hafnia-based double-layer ferroelectric tunnel junctions as artificial synapses for neuromorphic computing B Max, M Hoffmann, H Mulaosmanovic, S Slesazeck, T Mikolajick ACS Applied Electronic Materials 2 (12), 4023-4033, 2020 | 108 | 2020 |
| Multilevel ferroelectric memory cell for an integrated circuit S Slesazeck, H Mulaosmanovic US Patent 9,830,969, 2017 | 96 | 2017 |
| Accumulative polarization reversal in nanoscale ferroelectric transistors H Mulaosmanovic, T Mikolajick, S Slesazeck ACS applied materials & interfaces 10 (28), 23997-24002, 2018 | 95 | 2018 |
| High endurance strategies for hafnium oxide based ferroelectric field effect transistor J Muller, P Polakowski, S Muller, H Mulaosmanovic, J Ocker, T Mikolajick, ... 2016 16th non-volatile memory technology symposium (NVMTS), 1-7, 2016 | 93 | 2016 |
| Reconfigurable NAND/NOR logic gates in 28 nm HKMG and 22 nm FD-SOI FeFET technology ET Breyer, H Mulaosmanovic, T Mikolajick, S Slesazeck 2017 IEEE International Electron Devices Meeting (IEDM), 28.5. 1-28.5. 4, 2017 | 87 | 2017 |
| Computing with ferroelectric FETs: Devices, models, systems, and applications A Aziz, ET Breyer, A Chen, X Chen, S Datta, SK Gupta, M Hoffmann, ... 2018 Design, Automation & Test in Europe Conference & Exhibition (DATE …, 2018 | 86 | 2018 |
| Random number generation based on ferroelectric switching H Mulaosmanovic, T Mikolajick, S Slesazeck IEEE Electron Device Letters 39 (1), 135-138, 2017 | 75 | 2017 |
| Ferroelectric-gate field effect transistor memories H Ishiwara, M Okuyama, S Sakai, SM Yoon Springer 131, 141-155, 2016 | 66 | 2016 |
