Folgen
Brad Richard Conrad
Brad Richard Conrad
Education and Workforce Development Manager
Bestätigte E-Mail-Adresse bei nist.gov
Titel
Zitiert von
Zitiert von
Jahr
Anisotropic Structure and Charge Transport in Highly Strain‐Aligned Regioregular Poly (3‐hexylthiophene)
B O'Connor, RJ Kline, BR Conrad, LJ Richter, D Gundlach, MF Toney, ...
Advanced Functional Materials 21 (19), 3697-3705, 2011
3422011
Correlations between mechanical and electrical properties of polythiophenes
B O’Connor, EP Chan, C Chan, BR Conrad, LJ Richter, RJ Kline, ...
ACS nano 4 (12), 7538-7544, 2010
2452010
Effect of acene length on electronic properties in 5-, 6-, and 7-ringed heteroacenes
KP Goetz, Z Li, JW Ward, C Bougher, J Rivnay, J Smith, BR Conrad, ...
Adv Mater 23, 3698-3703, 2011
772011
High performance airbrushed organic thin film transistors
CK Chan, LJ Richter, B Dinardo, C Jaye, BR Conrad, HW Ro, ...
Applied Physics Letters 96 (13), 2010
722010
Percolative effects on noise in pentacene transistors
BR Conrad, WG Cullen, W Yan, ED Williams
Applied Physics Letters 91 (24), 2007
462007
The effect of controllable thin film crystal growth on the aggregation of a novel high panchromaticity squaraine viable for organic solar cells
SD Spencer, C Bougher, PJ Heaphy, VM Murcia, CP Gallivan, A Monfette, ...
Solar energy materials and solar cells 112, 202-208, 2013
442013
Effect of impurities on pentacene island nucleation
BR Conrad, E Gomar-Nadal, WG Cullen, A Pimpinelli, TL Einstein, ...
Physical Review B 77 (20), 205328, 2008
372008
Effect of impurities on pentacene thin film growth for field-effect transistors
E Gomar-Nadal, BR Conrad, WG Cullen, ED Willams
The Journal of Physical Chemistry C 112 (14), 5646-5650, 2008
362008
C60 cluster formation at interfaces with pentacene thin-film phases
BR Conrad, J Tosado, G Dutton, DB Dougherty, W Jin, T Bonnen, ...
Applied Physics Letters 95 (21), 2009
322009
Temperature-dependent nucleation and capture-zone scaling of C60 on silicon oxide
MA Groce, BR Conrad, WG Cullen, A Pimpinelli, ED Williams, TL Einstein
Surface science 606 (1-2), 53-56, 2012
212012
Characterization of a soluble anthradithiophene derivative
BR Conrad, CK Chan, MA Loth, SR Parkin, X Zhang, DM DeLongchamp, ...
Applied Physics Letters 97 (13), 2010
212010
Pentacene islands grown on ultra-thin SiO2
BR Conrad, WG Cullen, BC Riddick, ED Williams
Surface science 603 (3), L27-L30, 2009
162009
Role of Fluorine Interactions in the Self-Assembly of a Functionalized Anthradithiophene Monolayer on Au (111)
SM Huston, J Wang, MA Loth, JE Anthony, BR Conrad, DB Dougherty
The Journal of Physical Chemistry C 116 (40), 21465-21471, 2012
132012
Flip chip lamination to electrically contact organic single crystals on flexible substrates
M Coll, KP Goetz, BR Conrad, CA Hacker, DJ Gundlach, CA Richter, ...
Applied Physics Letters 98 (16), 2011
92011
Spatial first-passage statistics of Al∕ Si (111)−(3× 3) step fluctuations
BR Conrad, WG Cullen, DB Dougherty, I Lyubinetsky, ED Williams
Physical Review E 75 (2), 021603, 2007
62007
Coverage dependent molecular assembly of anthraquinone on Au (111)
AS DeLoach, BR Conrad, TL Einstein, DB Dougherty
The Journal of Chemical Physics 147 (18), 2017
42017
Characterization of organic solar cell morphology
E Lees, K Kelly, C Bougher, S Spencer, P Heaphy, J Cody, C Collison, ...
APS March Meeting Abstracts 2013, C46. 010, 2013
42013
Disruption of Molecular Ordering over Several Layers near the Au/2, 8-Difluoro-5, 11-bis (triethylsilylethynyl) Anthradithiophene Interface
SM Huston, J Wang, T McAfee, M Loth, JE Anthony, HW Ade, BR Conrad, ...
Crystal Growth & Design 15 (2), 822-828, 2015
32015
Intrinsic Charge Trapping Observed as Surface Potential Variations in diF-TES-ADT Films
BC Hoffman, T McAfee, BR Conrad, MA Loth, JE Anthony, HW Ade, ...
ACS Applied Materials & Interfaces 8 (33), 21490-21496, 2016
22016
Nanoscale thermal analysis of organic solar cells
K Kelley, E Lees, C Bougher, T Coffey, B Conrad, P Heaphy, C Collison, ...
APS March Meeting Abstracts 2013, C46. 009, 2013
22013
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20