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Andreas Schenk
Andreas Schenk
Professor ETH Zurich
Verified email at iis.ee.ethz.ch
Title
Cited by
Cited by
Year
Atomistic simulation of nanowires in the s p 3 d 5 s* tight-binding formalism: From boundary conditions to strain calculations
M Luisier, A Schenk, W Fichtner, G Klimeck
Physical Review B 74 (20), 205323, 2006
4982006
Finite-temperature full random-phase approximation model of band gap narrowing for silicon device simulation
A Schenk
Journal of Applied Physics 84 (7), 3684-3695, 1998
4391998
A model for the field and temperature dependence of Shockley-Read-Hall lifetimes in silicon
A Schenk
Solid-State Electronics 35 (11), 1585-1596, 1992
4061992
Reassessment of the intrinsic carrier density in crystalline silicon in view of band-gap narrowing
PP Altermatt, A Schenk, F Geelhaar, G Heiser
Journal of Applied Physics 93 (3), 1598-1604, 2003
3042003
A simulation model for the density of states and for incomplete ionization in crystalline silicon. II. Investigation of Si:As and Si:B and usage in device simulation
PP Altermatt, A Schenk, B Schmithüsen, G Heiser
J. Appl. Phys. 100 (11), 113715, 2006
287*2006
Rigorous theory and simplified model of the band-to-band tunneling in silicon
A Schenk
Solid-State Electronics 36 (1), 19-34, 1993
2751993
Modeling and simulation of tunneling through ultra-thin gate dielectrics
A Schenk, G Heiser
Journal of applied physics 81 (12), 7900-7908, 1997
2721997
Numerical modeling of highly doped Si: P emitters based on Fermi–Dirac statistics and self-consistent material parameters
PP Altermatt, JO Schumacher, A Cuevas, MJ Kerr, SW Glunz, RR King, ...
Journal of Applied Physics 92 (6), 3187-3197, 2002
2392002
Quantum device-simulation with the density-gradient model on unstructured grids
A Wettstein, A Schenk, W Fichtner
IEEE Transactions on Electron Devices 48 (2), 279-284, 2001
2292001
Advanced physical models for silicon device simulation
A Schenk
Springer Science & Business Media, 1998
1831998
Quantum transport in two-and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism
M Luisier, A Schenk, W Fichtner
Journal of Applied physics 100 (4), 2006
1762006
Determination of electron effective mass and electron affinity in HfO2 using MOS and MOSFET structures
S Monaghan, PK Hurley, K Cherkaoui, MA Negara, A Schenk
Solid-State Electronics 53 (4), 438-444, 2009
1572009
High-speed III-V nanowire photodetector monolithically integrated on Si
S Mauthe, Y Baumgartner, M Sousa, Q Ding, MD Rossell, A Schenk, ...
Nature communications 11 (1), 4565, 2020
1562020
Coupled defect‐level recombination: Theory and application to anomalous diode characteristics
A Schenk, U Krumbein
Journal of applied physics 78 (5), 3185-3192, 1995
1541995
Trap-assisted tunneling in Si-InAs nanowire heterojunction tunnel diodes
CD Bessire, MT Björk, H Schmid, A Schenk, KB Reuter, H Riel
Nano letters 11 (10), 4195-4199, 2011
1492011
Field and high‐temperature dependence of the long term charge loss in erasable programmable read only memories: Measurements and modeling
M Herrmann, A Schenk
Journal of applied physics 77 (9), 4522-4540, 1995
1481995
Explanation of commonly observed shunt currents in c-Si solar cells by means of recombination statistics beyond the Shockley-Read-Hall approximation
S Steingrube, O Breitenstein, K Ramspeck, S Glunz, A Schenk, ...
Journal of Applied Physics 110 (1), 2011
1362011
The origin of ideality factors n> 2 of shunts and surfaces in the dark IV curves of Si solar cells
O Breitenstein, P Altermatt, K Ramspeck, A Schenk
Proceedings of the 21st European photovoltaic solar energy conference, 625-628, 2006
1042006
Individual Defects in InAs/InGaAsSb/GaSb Nanowire Tunnel Field-Effect Transistors Operating below 60 mV/decade
E Memisevic, M Hellenbrand, E Lind, AR Persson, S Sant, A Schenk, ...
Nano Letters 17 (7), 4373-4380, 2017
1022017
Lateral InAs/Si p-type tunnel FETs integrated on Si—Part 2: Simulation study of the impact of interface traps
S Sant, K Moselund, D Cutaia, H Schmid, M Borg, H Riel, A Schenk
IEEE Transactions on Electron Devices 63 (11), 4240-4247, 2016
892016
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