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Robert D. Clark
Robert D. Clark
Tokyo Electron
Verified email at us.tel.com - Homepage
Title
Cited by
Cited by
Year
Method for forming strained silicon nitride films and a device containing such films
RD Clark
US Patent 7,651,961, 2010
5282010
Method of forming crystallographically stabilized doped hafnium zirconium based films
RD Clark
US Patent 7,833,913, 2010
4492010
Method of forming mixed rare earth oxide and aluminate films by atomic layer deposition
R Clark
US Patent App. 11/278,387, 2007
4412007
Nitrogen profile engineering in nitrided high dielectric constant films
RD Clark
US Patent 7,767,262, 2010
4282010
Method of forming mixed rare earth oxynitride and aluminum oxynitride films by atomic layer deposition
RD Clark
US Patent 8,097,300, 2012
4022012
High Flow GaCl3 Delivery
T Steidl, C Birtcher, R Clark, L Senecal
US Patent App. 11/756,091, 2008
3982008
Structures and techniques for atomic layer deposition
S Aoyama, RD Clark, SP Consiglio, M Hopstaken, H Jagannathan, ...
US Patent 8,722,548, 2014
3582014
Method of forming mixed rare earth nitride and aluminum nitride films by atomic layer deposition
RD Clark
US Patent 8,012,442, 2011
3582011
Critical Role of Interlayer in Hf0.5Zr0.5O2Ferroelectric FET Nonvolatile Memory Performance
K Ni, P Sharma, J Zhang, M Jerry, JA Smith, K Tapily, R Clark, ...
IEEE Transactions on Electron Devices 65 (6), 2461-2469, 2018
3112018
Method for forming ultra-shallow doping regions by solid phase diffusion
RD Clark
US Patent 8,877,620, 2014
2262014
Area-selective deposition: Fundamentals, applications, and future outlook
GN Parsons, RD Clark
Chemistry of Materials 32 (12), 4920-4953, 2020
2202020
Emerging applications for high K materials in VLSI technology
RD Clark
Materials 7 (4), 2913-2944, 2014
1782014
Perspective: New process technologies required for future devices and scaling
R Clark, K Tapily, KH Yu, T Hakamata, S Consiglio, D O’meara, C Wajda, ...
Apl Materials 6 (5), 2018
1652018
Synthesis and Comparative η1-Alkyl and Sterically Induced Reduction Reactivity of (C5Me5)3Ln Complexes of La, Ce, Pr, Nd, and Sm
WJ Evans, JM Perotti, SA Kozimor, TM Champagne, BL Davis, GW Nyce, ...
Organometallics 24 (16), 3916-3931, 2005
1452005
Complete band offset characterization of the HfO2/SiO2/Si stack using charge corrected x-ray photoelectron spectroscopy
E Bersch, M Di, S Consiglio, RD Clark, GJ Leusink, AC Diebold
Journal of Applied Physics 107 (4), 2010
1292010
Electrical properties and thermal stability of CVD HfOxNy gate dielectric with poly-Si gate electrode
CH Choi, TS Jeon, R Clark, DL Kwong
IEEE Electron Device Letters 24 (4), 215-217, 2003
952003
Bent vs Linear Metallocenes Involving C5Me5 vs C8H8 Ligands: Synthesis, Structure, and Reactivity of the Triple-Decked (C5Me5)(THF) x Sm (C8H8) Sm (THF) x (C5Me5)(x= 0, 1 …
WJ Evans, RD Clark, MA Ansari, JW Ziller
Journal of the American Chemical Society 120 (37), 9555-9563, 1998
901998
Impact of total and partial dipole switching on the switching slope of gate-last negative capacitance FETs with ferroelectric hafnium zirconium oxide gate stack
P Sharma, K Tapily, AK Saha, J Zhang, A Shaughnessy, A Aziz, ...
2017 Symposium on VLSI Technology, T154-T155, 2017
872017
MOS characteristics of ultrathin CVD HfAlO gate dielectrics
SH Bae, CH Lee, R Clark, DL Kwong
IEEE Electron Device Letters 24 (9), 556-558, 2003
872003
Hafnium oxide gate stack prepared by in situ rapid thermal chemical vapor deposition process for advanced gate dielectrics
SJ Lee, TS Jeon, DL Kwong, R Clark
Journal of Applied Physics 92 (5), 2807-2809, 2002
812002
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