Accelerated life test of high brightness light emitting diodes L Trevisanello, M Meneghini, G Mura, M Vanzi, M Pavesi, G Meneghesso, ... IEEE Transactions on Device and Materials Reliability 8 (2), 304-311, 2008 | 211 | 2008 |
Thermal stability of ε-Ga2O3 polymorph R Fornari, M Pavesi, V Montedoro, D Klimm, F Mezzadri, I Cora, B Pécz, ... Acta Materialia 140, 411-416, 2017 | 112 | 2017 |
Influence of short-term low current dc aging on the electrical and optical properties of InGaN blue light-emitting diodes F Rossi, M Pavesi, M Meneghini, G Salviati, M Manfredi, G Meneghesso, ... Journal of applied physics 99 (5), 2006 | 112 | 2006 |
ε-Ga2O3 epilayers as a material for solar-blind UV photodetectors M Pavesi, F Fabbri, F Boschi, G Piacentini, A Baraldi, M Bosi, E Gombia, ... Materials chemistry and physics 205, 502-507, 2018 | 106 | 2018 |
Optical evidence of an electrothermal degradation of InGaN-based light-emitting diodes during electrical stress M Pavesi, M Manfredi, G Salviati, N Armani, F Rossi, G Meneghesso, ... Applied physics letters 84 (17), 3403-3405, 2004 | 70 | 2004 |
Leakage current and reverse-bias luminescence in InGaN-based light-emitting diodes M Meneghini, N Trivellin, M Pavesi, M Manfredi, U Zehnder, B Hahn, ... Applied Physics Letters 95 (17), 2009 | 65 | 2009 |
Study of surface treatment effects on the metal-CdZnTe interface L Marchini, A Zappettini, E Gombia, R Mosca, M Lanata, M Pavesi IEEE Transactions on Nuclear Science 56 (4), 1823-1826, 2009 | 65 | 2009 |
Pruritus characteristics in a large Italian cohort of psoriatic patients G Damiani, S Cazzaniga, RR Conic, L Naldi, Psocare Registry Network, ... Journal of the European Academy of Dermatology and Venereology 33 (7), 1316-1324, 2019 | 55 | 2019 |
Latent tuberculosis infection in patients with chronic plaque psoriasis: evidence from the Italian Psocare Registry P Gisondi, S Cazzaniga, S Chimenti, M Maccarone, M Picardo, ... British Journal of Dermatology 172 (6), 1613-1620, 2015 | 50 | 2015 |
Verification of electron distributions in silicon by means of hot carrier luminescence measurements L Selmi, M Mastrapasqua, DM Boulin, JD Bude, M Pavesi, E Sangiorgi, ... IEEE Transactions on Electron Devices 45 (4), 802-808, 1998 | 50 | 1998 |
Boron oxide encapsulated vertical Bridgman grown CdZnTe crystals as X-ray detector material A Zappettini, M Zha, L Marchini, D Calestani, R Mosca, E Gombia, ... 2008 IEEE Nuclear Science Symposium Conference Record, 118-121, 2008 | 47 | 2008 |
Analysis of hot carrier transport in AlGaAs/InGaAs pseudomorphic HEMTs by means of electroluminescence G Meneghesso, T Grave, M Manfredi, M Pavesi, C Canali, E Zanoni IEEE Transactions on Electron Devices 47 (1), 2-10, 2000 | 44 | 2000 |
Boron oxide fully encapsulated CdZnTe crystals grown by the vertical Bridgman technique A Zappettini, M Zha, M Pavesi, L Zanotti Journal of crystal growth 307 (2), 283-288, 2007 | 43 | 2007 |
Branched gold nanoparticles on ZnO 3D architecture as biomedical SERS sensors S Picciolini, N Castagnetti, R Vanna, D Mehn, M Bedoni, F Gramatica, ... RSC advances 5 (113), 93644-93651, 2015 | 42 | 2015 |
Charge collection in semi-insulator radiation detectors in the presence of a linear decreasing electric field M Zanichelli, A Santi, M Pavesi, A Zappettini Journal of Physics D: Applied Physics 46 (36), 365103, 2013 | 42 | 2013 |
Growth and characterization of CZT crystals by the vertical Bridgman method for X-ray detector applications A Zappettini, L Marchini, M Zha, G Benassi, N Zambelli, D Calestani, ... IEEE Transactions on Nuclear Science 58 (5), 2352-2356, 2011 | 40 | 2011 |
Diagnosis of trapping phenomena in GaN MESFETs G Meneghesso, A Chini, E Zanoni, M Manfredi, M Pavesi, B Boudart, ... International Electron Devices Meeting 2000. Technical Digest. IEDM (Cat. No …, 2000 | 38 | 2000 |
Right ventricular end-diastolic volume index as a predictor of preload status in patients with low right ventricular ejection fraction during orthotopic liver transplantation A Siniscalchi, M Pavesi, E Piraccini, L De Pietri, V Braglia, F Di Benedetto, ... Transplantation proceedings 37 (6), 2541-2543, 2005 | 37 | 2005 |
Effects of channel quantization and temperature on off-state and on-state breakdown in composite channel and conventional InP-based HEMTs G Meneghesso, A Mion, A Neviani, M Matloubian, J Brown, M Hafizi, T Liu, ... International Electron Devices Meeting. Technical Digest, 43-46, 1996 | 34 | 1996 |
Electron and hole-related luminescence processes in gate injection transistors M Meneghini, M Scamperle, M Pavesi, M Manfredi, T Ueda, H Ishida, ... Applied Physics Letters 97 (3), 2010 | 33 | 2010 |