| Cold-source paradigm for steep-slope transistors based on van der Waals heterojunctions D Logoteta, J Cao, M Pala, P Dollfus, Y Lee, G Iannaccone Physical review research 2 (4), 043286, 2020 | 25 | 2020 |
| Ab initio mobility of single-layer MoS2 and WS2: comparison to experiments and impact on the device characteristics Y Lee, S Fiore, M Luisier 2019 IEEE International Electron Devices Meeting (IEDM), 24.4. 1-24.4. 4, 2019 | 23 | 2019 |
| Efficient quantum modeling of inelastic interactions in nanodevices Y Lee, M Lannoo, N Cavassilas, M Luisier, M Bescond Physical Review B 93 (20), 205411, 2016 | 23 | 2016 |
| Anharmonic phonon-phonon scattering modeling of three-dimensional atomistic transport: An efficient quantum treatment Y Lee, M Bescond, D Logoteta, N Cavassilas, M Lannoo, M Luisier Physical Review B 97 (20), 205447, 2018 | 17 | 2018 |
| Quantum treatment of phonon scattering for modeling of three-dimensional atomistic transport Y Lee, M Bescond, N Cavassilas, D Logoteta, L Raymond, M Lannoo, ... Physical Review B 95 (20), 201412, 2017 | 16 | 2017 |
| Dual-Gated WTe2/MoSe2 van der Waals Tandem Solar Cells N Cavassilas, D Logoteta, Y Lee, F Michelini, M Lannoo, M Bescond, ... The Journal of Physical Chemistry C 122 (50), 28545-28549, 2018 | 15 | 2018 |
| Impact of orientation misalignments on black phosphorus ultrascaled field-effect transistors C Klinkert, S Fiore, J Backman, Y Lee, M Luisier IEEE Electron Device Letters 42 (3), 434-437, 2021 | 8 | 2021 |
| Quantum treatment of inelastic interactions for the modeling of nanowire field-effect transistors Y Lee, D Logoteta, N Cavassilas, M Lannoo, M Luisier, M Bescond Materials 13 (1), 60, 2019 | 7 | 2019 |
| Efficient and accurate defect level modeling in monolayer MoS2 via GW+ DFT with open boundary conditions G Gandus, Y Lee, L Deuschle, D Passerone, M Luisier Solid-State Electronics 199, 108499, 2023 | 2 | 2023 |
| Dynamics of van der Waals charge qubit in two-dimensional bilayer materials: Ab initio quantum transport and qubit measurement J Cao, G Gandus, T Agarwal, M Luisier, Y Lee Physical Review Research 4 (4), 043073, 2022 | 2 | 2022 |
| Efficient partitioning of surface Green’s function: toward ab initio contact resistance study G Gandus, Y Lee, D Passerone, M Luisier 2020 International Conference on Simulation of Semiconductor Processes and …, 2020 | 2 | 2020 |
| Atomistic Simulation of Nanoscale Devices Y Lee, J Cao, M Luisier IEEE Nanotechnology Magazine, 2023 | 1 | 2023 |
| Ab initio quantum transport simulations of defective devices based on 2-D materials via a projected-GW approach G Gandus, J Cao, T Agarwal, M Luisier, Y Lee 2022 International Electron Devices Meeting (IEDM), 28.3. 1-28.3. 4, 2022 | 1 | 2022 |
| Electron-phonon calculations using a Wannier-based supercell approach: Applications to the monolayer MoS2 mobility J Backman, Y Lee, M Luisier Solid-State Electronics 198, 108461, 2022 | 1 | 2022 |
| Transistors à effet de champ M LUISIER, C KLINKERT, S FIORE, J BACKMAN, Y LEE, C STIEGER, ... Au-delà du CMOS, 37, 2024 | | 2024 |
| Phonon-Limited Transport in 2D Materials: A Unified Approach for ab initio Mobility and Current Calculations J Backman, Y Lee, M Luisier arXiv preprint arXiv:2312.00577, 2023 | | 2023 |
| (Invited) Advanced Modeling of Nanoscale Devices M Luisier, J Aeschlimann, J Backman, J Cao, M Kaniselvan, Y Lee, ... Electrochemical Society Meeting Abstracts 243, 1849-1849, 2023 | | 2023 |
| Field-Effect Transistors Based on 2D Materials: A Modeling Perspective M Luisier, C Klinkert, S Fiore, J Backman, Y Lee, C Stieger, Á Szabó Beyond-CMOS: State of the Art and Trends, 33, 2023 | | 2023 |
| Radio Frequency Performance of High Mobility 2D Monolayer Au2S-based Transistors O Maheshwari, J Cao, Y Lee, M Luisier, T Agarwal 2023 7th IEEE Electron Devices Technology & Manufacturing Conference (EDTM), 1-3, 2023 | | 2023 |
| 2-D Materials Modelling: from Transistors to Majorana Fermions M Luisier, C Klinkert, Y Lee, D Campi, N Marzari APS March Meeting Abstracts 2022, B32. 005, 2022 | | 2022 |
Mathieu LuisierETH ZurichVerified email at iis.ee.ethz.ch
