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Raoul Schlesser
Raoul Schlesser
HexaTech, Inc.
Bestätigte E-Mail-Adresse bei hexatechinc.com
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Zitiert von
Zitiert von
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Dielectric, elastic, piezoelectric, electro-optic, and elasto-optic tensors of crystals
M Zgonik, P Bernasconi, M Duelli, R Schlesser, P Günter, MH Garrett, ...
Physical review B 50 (9), 5941, 1994
6251994
Materials constants of KNbO3 relevant for electro‐ and acousto‐optics
M Zgonik, R Schlesser, I Biaggio, E Voit, J Tscherry, P Günter
Journal of applied physics 74 (2), 1287-1297, 1993
3731993
Growth and characterization of AlN and AlGaN epitaxial films on AlN single crystal substrates
R Dalmau, B Moody, R Schlesser, S Mita, J Xie, M Feneberg, B Neuschl, ...
Journal of The Electrochemical Society 158 (5), H530, 2011
1692011
Seeded growth of AlN bulk single crystals by sublimation
R Schlesser, R Dalmau, Z Sitar
Journal of crystal growth 241 (4), 416-420, 2002
1612002
Deep-ultraviolet light-emitting diodes fabricated on AlN substrates prepared by hydride vapor phase epitaxy
T Kinoshita, K Hironaka, T Obata, T Nagashima, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (12), 122101, 2012
1512012
Preparation of a freestanding AlN substrate from a thick AlN layer grown by hydride vapor phase epitaxy on a bulk AlN substrate prepared by physical vapor transport
Y Kumagai, Y Kubota, T Nagashima, T Kinoshita, R Dalmau, R Schlesser, ...
Applied Physics Express 5 (5), 055504, 2012
1492012
Electro-optic effects in molecular crystals
C Bosshard, K Sutter, R Schlesser, P Günter
JOSA B 10 (5), 867-885, 1993
1361993
Lasing and longitudinal cavity modes in photo-pumped deep ultraviolet AlGaN heterostructures
J Xie, S Mita, Z Bryan, W Guo, L Hussey, B Moody, R Schlesser, R Kirste, ...
Applied Physics Letters 102 (17), 2013
1342013
Growth of AlN single crystalline boules
ZG Herro, D Zhuang, R Schlesser, Z Sitar
Journal of Crystal Growth 312 (18), 2519-2521, 2010
1342010
The growth and optical properties of large, high-quality AlN single crystals
M Strassburg, J Senawiratne, N Dietz, U Haboeck, A Hoffmann, V Noveski, ...
Journal of applied physics 96 (10), 5870-5876, 2004
1312004
Growth of Ga-and N-polar gallium nitride layers by metalorganic vapor phase epitaxy on sapphire wafers
R Collazo, S Mita, A Aleksov, R Schlesser, Z Sitar
Journal of crystal growth 287 (2), 586-590, 2006
1132006
Band-edge exciton states in AlN single crystals and epitaxial layers
L Chen, BJ Skromme, RF Dalmau, R Schlesser, Z Sitar, C Chen, W Sun, ...
Applied physics letters 85 (19), 4334-4336, 2004
1072004
Seeded growth of AlN on N-and Al-polar< 0001> AlN seeds by physical vapor transport
ZG Herro, D Zhuang, R Schlesser, R Collazo, Z Sitar
Journal of crystal growth 286 (2), 205-208, 2006
962006
Optical and Nonlinear Optical Properties of 4'-dimethylamino-N-methyl-4-stilbazolium tosylate (DAST) crystals
G Knopfle
Nonlinear Opt. 9, 143-149, 1995
961995
Optically pumped UV lasers grown on bulk AlN substrates
T Wunderer, CL Chua, JE Northrup, Z Yang, NM Johnson, M Kneissl, ...
physica status solidi c 9 (3‐4), 822-825, 2012
942012
Growth of bulk AlN crystals by vaporization of aluminum in a nitrogen atmosphere
R Schlesser, Z Sitar
Journal of crystal growth 234 (2-3), 349-353, 2002
942002
Seeded growth of AlN single crystals by physical vapor transport
D Zhuang, ZG Herro, R Schlesser, Z Sitar
Journal of crystal growth 287 (2), 372-375, 2006
932006
Electron emission characteristics of GaN pyramid arrays grown via organometallic vapor phase epitaxy
BL Ward, OH Nam, JD Hartman, SL English, BL McCarson, R Schlesser, ...
Journal of applied physics 84 (9), 5238-5242, 1998
831998
High-temperature electromechanical characterization of AlN single crystals
T Kim, J Kim, R Dalmau, R Schlesser, E Preble, X Jiang
IEEE transactions on Ultrasonics, Ferroelectrics, and Frequency control 62 …, 2015
822015
Mass transfer in AlN crystal growth at high temperatures
V Noveski, R Schlesser, S Mahajan, S Beaudoin, Z Sitar
Journal of crystal growth 264 (1-3), 369-378, 2004
812004
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