Nadia El-Masry
Nadia El-Masry
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Room temperature ferromagnetic properties of (Ga, Mn) N
ML Reed, NA El-Masry, HH Stadelmaier, MK Ritums, MJ Reed, CA Parker, ...
Applied Physics Letters 79 (21), 3473-3475, 2001
Phase separation in InGaN grown by metalorganic chemical vapor deposition
NA El-Masry, EL Piner, SX Liu, SM Bedair
Applied physics letters 72 (1), 40-42, 1998
MOCVD of Bi2Te3, Sb2Te3 and their superlattice structures for thin-film thermoelectric applications
R Venkatasubramanian, T Colpitts, E Watko, M Lamvik, N El-Masry
Journal of crystal growth 170 (1-4), 817-821, 1997
Stacked quantum well aluminum indium gallium nitride light emitting diodes
FG McIntosh, SM Bedair, NA El-Masry, JC Roberts
US Patent 5,684,309, 1997
Violet/blue emission from epitaxial cerium oxide films on silicon substrates
AH Morshed, ME Moussa, SM Bedair, R Leonard, SX Liu, N El-Masry
Applied physics letters 70 (13), 1647-1649, 1997
Atomic layer epitaxy of III‐V binary compounds
SM Bedair, MA Tischler, T Katsuyama, NA El‐Masry
Applied physics letters 47 (1), 51-53, 1985
Reaction and regrowth control of CeO2 on Si(111) surface for the silicon‐on‐insulator structure
T Chikyow, SM Bedair, L Tye, NA El‐Masry
Applied physics letters 65 (8), 1030-1032, 1994
Effect of hydrogen on the indium incorporation in InGaN epitaxial films
EL Piner, MK Behbehani, NA El-Masry, FG McIntosh, JC Roberts, ...
Applied physics letters 70 (4), 461-463, 1997
Electrical characteristics of epitaxial CeO2 on Si(111)
L Tye, NA El‐Masry, T Chikyow, P McLarty, SM Bedair
Applied physics letters 65 (24), 3081-3083, 1994
Low-temperature organometallic epitaxy and its application to superlattice structures in thermoelectrics
R Venkatasubramanian, T Colpitts, B O’Quinn, S Liu, N El-Masry, ...
Applied Physics Letters 75 (8), 1104-1106, 1999
Determination of the critical layer thickness in the InGaN/GaN heterostructures
CA Parker, JC Roberts, SM Bedair, MJ Reed, SX Liu, NA El-Masry
Applied Physics Letters 75 (18), 2776-2778, 1999
Phase separation and ordering coexisting in grown by metal organic chemical vapor deposition
MK Behbehani, EL Piner, SX Liu, NA El-Masry, SM Bedair
Applied physics letters 75 (15), 2202-2204, 1999
Growth and characterization of AlInGaN quaternary alloys
FG McIntosh, KS Boutros, JC Roberts, SM Bedair, EL Piner, NA El‐Masry
Applied physics letters 68 (1), 40-42, 1996
Optical band gap dependence on composition and thickness of grown on GaN
CA Parker, JC Roberts, SM Bedair, MJ Reed, SX Liu, NA El-Masry, ...
Applied Physics Letters 75 (17), 2566-2568, 1999
Room temperature magnetic (Ga, Mn) N: a new material for spin electronic devices
ML Reed, MK Ritums, HH Stadelmaier, MJ Reed, CA Parker, SM Bedair, ...
Materials Letters 51 (6), 500-503, 2001
Critical layer thickness determination of GaN/InGaN/GaN double heterostructures
MJ Reed, NA El-Masry, CA Parker, JC Roberts, SM Bedair
Applied Physics Letters 77 (25), 4121-4123, 2000
Interactions of dislocations in GaAs grown on Si substrates with InGaAs‐GaAsP strained layered superlattices
NA El‐Masry, JC Tarn, NH Karam
Journal of applied physics 64 (7), 3672-3677, 1988
Methods of forming indium gallium nitride or aluminum indium gallium nitride using controlled hydrogen gas flows
FG McIntosh, SM Bedair, NA El-Masry, JC Roberts
US Patent 5,851,905, 1998
Growth of device quality GaN at 550 C by atomic layer epitaxy
NH Karam, T Parodos, P Colter, D McNulty, W Rowland, J Schetzina, ...
Applied physics letters 67 (1), 94-96, 1995
Atomic layer epitaxy of GaInP ordered alloy
BT McDermott, KG Reid, NA El‐Masry, SM Bedair, WM Duncan, X Yin, ...
Applied physics letters 56 (12), 1172-1174, 1990
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