| Investigation of the mechanism for Ohmic contact formation in Al and Ti/Al contacts to n-type GaN BP Luther, SE Mohney, TN Jackson, M Asif Khan, Q Chen, JW Yang Applied physics letters 70 (1), 57-59, 1997 | 301 | 1997 |
| X-ray photoelectron spectroscopy and x-ray diffraction study of the thermal oxide on gallium nitride SD Wolter, BP Luther, DL Waltemyer, C Önneby, SE Mohney, RJ Molnar Applied Physics Letters 70 (16), 2156-2158, 1997 | 246 | 1997 |
| Fabrication of micromechanical devices from polysilicon films with smooth surfaces H Guckel, JJ Sniegowski, TR Christenson, S Mohney, TF Kelly Sensors and Actuators 20 (1-2), 117-122, 1989 | 240 | 1989 |
| High temperature Pt Schottky diode gas sensors on n-type GaN BP Luther, SD Wolter, SE Mohney Sensors and Actuators B: Chemical 56 (1-2), 164-168, 1999 | 231 | 1999 |
| Bright and color-saturated emission from blue light-emitting diodes based on solution-processed colloidal nanocrystal quantum dots Z Tan, F Zhang, T Zhu, J Xu, AY Wang, JD Dixon, L Li, Q Zhang, ... Nano letters 7 (12), 3803-3807, 2007 | 215 | 2007 |
| Employing heavy metal-free colloidal quantum dots in solution-processed white light-emitting diodes Y Zhang, C Xie, H Su, J Liu, S Pickering, Y Wang, WW Yu, J Wang, ... Nano letters 11 (2), 329-332, 2011 | 202 | 2011 |
| Near‐band‐edge electroluminescence from heavy‐metal‐free colloidal quantum dots Z Tan, Y Zhang, C Xie, H Su, J Liu, C Zhang, N Dellas, SE Mohney, ... Advanced materials 23 (31), 3553-3558, 2011 | 197 | 2011 |
| Measuring the specific contact resistance of contacts to semiconductor nanowires SE Mohney, Y Wang, MA Cabassi, KK Lew, S Dey, JM Redwing, ... Solid-state electronics 49 (2), 227-232, 2005 | 177 | 2005 |
| Fermi level depinning and contact resistivity reduction using a reduced titania interlayer in n-silicon metal-insulator-semiconductor ohmic contacts A Agrawal, J Lin, M Barth, R White, B Zheng, S Chopra, S Gupta, K Wang, ... Applied Physics Letters 104 (11), 112101, 2014 | 135 | 2014 |
| Analysis of a thin AlN interfacial layer in Ti/Al and Pd/Al ohmic contacts to -type GaN BP Luther, JM DeLucca, SE Mohney, RF Karlicek Jr Applied physics letters 71 (26), 3859-3861, 1997 | 126 | 1997 |
| Diameter‐Controlled Synthesis of Silicon Nanowires Using Nanoporous Alumina Membranes TE Bogart, S Dey, KK Lew, SE Mohney, JM Redwing Advanced Materials 17 (1), 114-117, 2005 | 125 | 2005 |
| Titanium and aluminum-titanium ohmic contacts to p-type SiC J Crofton, L Beyer, JR Williams, ED Luckowski, SE Mohney, JM Delucca Solid-State Electronics 41 (11), 1725-1729, 1997 | 118 | 1997 |
| Finding the optimum Al–Ti alloy composition for use as an ohmic contact to p-type SiC J Crofton, SE Mohney, JR Williams, T Isaacs-Smith Solid-State Electronics 46 (1), 109-113, 2002 | 98 | 2002 |
| An investigation into the early stages of oxide growth on gallium nitride SD Wolter, JM DeLucca, SE Mohney, RS Kern, CP Kuo Thin Solid Films 371 (1-2), 153-160, 2000 | 94 | 2000 |
| Mist fabrication of light emitting diodes with colloidal nanocrystal quantum dots T Zhu, K Shanmugasundaram, SC Price, J Ruzyllo, F Zhang, J Xu, ... Applied Physics Letters 92 (2), 023111, 2008 | 93 | 2008 |
| Influence of oxygen on the activation of p-type GaN BA Hull, SE Mohney, HS Venugopalan, JC Ramer Applied Physics Letters 76 (16), 2271-2273, 2000 | 93 | 2000 |
| Fabrication and electrical properties of Si nanowires synthesized by al catalyzed vapor− liquid− solid growth Y Ke, X Weng, JM Redwing, CM Eichfeld, TR Swisher, SE Mohney, ... Nano letters 9 (12), 4494-4499, 2009 | 90 | 2009 |
| Interfacial reactions between nickel thin films and GaN HS Venugopalan, SE Mohney, BP Luther, SD Wolter, JM Redwing Journal of applied physics 82 (2), 650-654, 1997 | 89 | 1997 |
| V/Al/Pt/Au Ohmic contact to n-AlGaN/GaN heterostructures KO Schweitz, PK Wang, SE Mohney, D Gotthold Applied physics letters 80 (11), 1954-1956, 2002 | 83 | 2002 |
| Low resistance Al/Ti/n-GaN ohmic contacts with improved surface morphology and thermal stability JS Kwak, SE Mohney, JY Lin, RS Kern Semiconductor science and technology 15 (7), 756, 2000 | 81 | 2000 |
