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Quentin Smets
Quentin Smets
Verified email at imec.be
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Cited by
Year
Figure of merit for and identification of sub-60 mV/decade devices
WG Vandenberghe, AS Verhulst, B Sorée, W Magnus, G Groeseneken, ...
Applied Physics Letters 102 (1), 2013
1292013
2D materials: roadmap to CMOS integration
C Huyghebaert, T Schram, Q Smets, TK Agarwal, D Verreck, S Brems, ...
2018 IEEE International Electron Devices Meeting (IEDM), 22.1. 1-22.1. 4, 2018
942018
Ultra-scaled MOCVD MoS2 MOSFETs with 42nm contact pitch and 250µA/µm drain current
Q Smets, G Arutchelvan, J Jussot, D Verreck, I Asselberghs, AN Mehta, ...
2019 IEEE International Electron Devices Meeting (IEDM), 23.2. 1-23.2. 4, 2019
812019
Yield, variability, reliability, and stability of two-dimensional materials based solid-state electronic devices
M Lanza, Q Smets, C Huyghebaert, LJ Li
Nature communications 11 (1), 5689, 2020
792020
Two-Dimensional Crystal Grain Size Tuning in WS2 Atomic Layer Deposition: An Insight in the Nucleation Mechanism
B Groven, A Nalin Mehta, H Bender, J Meersschaut, T Nuytten, ...
Chemistry of Materials 30 (21), 7648-7663, 2018
672018
MoS2/MoTe2 Heterostructure Tunnel FETs Using Gated Schottky Contacts
Y Balaji, Q Smets, Á Śzabo, M Mascaro, D Lin, I Asselberghs, I Radu, ...
Advanced Functional Materials 30 (4), 1905970, 2020
592020
InGaAs tunnel diodes for the calibration of semi-classical and quantum mechanical band-to-band tunneling models
Q Smets, D Verreck, AS Verhulst, R Rooyackers, C Merckling, ...
Journal of Applied Physics 115 (18), 2014
582014
Tunnel field effect transistor and method for making thereof
AS Verhulst, Q Smets
US Patent 9,318,583, 2016
482016
Tunneling Transistors Based on MoS2/MoTe2 Van der Waals Heterostructures
Y Balaji, Q Smets, CJL De La Rosa, AKA Lu, D Chiappe, T Agarwal, ...
IEEE Journal of the Electron Devices Society 6, 1048-1055, 2018
442018
Record performance InGaAs homo-junction TFET with superior SS reliability over MOSFET
A Alian, J Franco, A Vandooren, Y Mols, A Verhulst, S El Kazzi, ...
2015 IEEE International Electron Devices Meeting (IEDM), 31.7. 1-31.7. 4, 2015
432015
Impact of device scaling on the electrical properties of MoS2 field-effect transistors
G Arutchelvan, Q Smets, D Verreck, Z Ahmed, A Gaur, S Sutar, J Jussot, ...
Scientific reports 11 (1), 6610, 2021
372021
Calibration of bulk trap-assisted tunneling and Shockley–Read–Hall currents and impact on InGaAs tunnel-FETs
Q Smets, AS Verhulst, E Simoen, D Gundlach, C Richter, N Collaert, ...
IEEE Transactions on Electron Devices 64 (9), 3622-3626, 2017
362017
Wafer-scale integration of double gated WS2-transistors in 300mm Si CMOS fab
I Asselberghs, Q Smets, T Schram, B Groven, D Verreck, A Afzalian, ...
2020 IEEE International Electron Devices Meeting (IEDM), 40.2. 1-40.2. 4, 2020
352020
Introducing 2D-FETs in device scaling roadmap using DTCO
Z Ahmed, A Afzalian, T Schram, D Jang, D Verreck, Q Smets, ...
2020 IEEE International Electron Devices Meeting (IEDM), 22.5. 1-22.5. 4, 2020
352020
Nucleation mechanism during WS2 plasma enhanced atomic layer deposition on amorphous Al2O3 and sapphire substrates
B Groven, AN Mehta, H Bender, Q Smets, J Meersschaut, A Franquet, ...
Journal of Vacuum Science & Technology A 36 (1), 2018
352018
Reactive plasma cleaning and restoration of transition metal dichalcogenide monolayers
D Marinov, JF de Marneffe, Q Smets, G Arutchelvan, KM Bal, E Voronina, ...
npj 2D Materials and Applications 5 (1), 17, 2021
322021
WS2 transistors on 300 mm wafers with BEOL compatibility
T Schram, Q Smets, B Groven, MH Heyne, E Kunnen, A Thiam, ...
2017 47th European Solid-State Device Research Conference (ESSDERC), 212-215, 2017
322017
Calibration of the effective tunneling bandgap in GaAsSb/InGaAs for improved TFET performance prediction
Q Smets, AS Verhulst, S El Kazzi, D Gundlach, CA Richter, A Mocuta, ...
IEEE transactions on electron devices 63 (11), 4248-4254, 2016
302016
Perspective of tunnel-FET for future low-power technology nodes
AS Verhulst, D Verreck, Q Smets, KH Kao, M Van de Put, R Rooyackers, ...
2014 IEEE International Electron Devices Meeting, 30.2. 1-30.2. 4, 2014
262014
Understanding and modelling the PBTI reliability of thin-film IGZO transistors
A Chasin, J Franco, K Triantopoulos, H Dekkers, N Rassoul, A Belmonte, ...
2021 IEEE International Electron Devices Meeting (IEDM), 31.1. 1-31.1. 4, 2021
212021
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