Johannes Gooth
Johannes Gooth
Bestätigte E-Mail-Adresse bei cpfs.mpg.de - Startseite
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Zitiert von
Zitiert von
Jahr
Experimental signatures of the mixed axial-gravitational anomaly in the Weyl semimetal NbP
J Gooth, AC Niemann, T Meng, AG Grushin, K Landsteiner, B Gotsmann, ...
Nature 547, 24, 2017
1642017
Large thermoelectric power factor enhancement observed in InAs nanowires
PM Wu, J Gooth, X Zianni, SF Svensson, JG Gluschke, KA Dick, ...
Nano Letters 13 (9), 4080, 2013
1072013
Thermal and electrical signatures of a hydrodynamic electron fluid in tungsten diphosphide
J Gooth, F Menges, C Shekhar, V Süß, N Kumar, Y Sun, U Drechsler, ...
Nature Communications 9, 4093, 2018
66*2018
Thermoelectric transport and Hall measurements of low defect Sb2Te3 thin films grown by atomic layer deposition
S Zastrow, J Gooth, T Boehnert, S Heiderich, W Toellner, S Heimann, ...
Semiconductor science and technology 28 (3), 035010, 2013
642013
Chiral magnetoresistance in the Weyl semimetal NbP
AC Niemann, J Gooth, SC Wu, S Bäßler, P Sergelius, R Hühne, ...
Scientific Reports 7, 43394, 2017
572017
Surface state dominated transport in topological insulator Bi2Te3 nanowires
B Hamdou, J Gooth, A Dorn, E Pippel, K Nielsch
Applied Physics Letters 103 (19), 193107, 2013
512013
Thermoelectric properties of topological insulator Bi2Te3, Sb2Te3, and Bi2Se3 thin film quantum wells
H Osterhage, J Gooth, B Hamdou, P Gwozdz, R Zierold, K Nielsch
Applied Physics Letters 105 (12), 123117, 2014
502014
Aharonov-Bohm oscillations and weak antilocalization in topological insulator Sb2Te3 nanowires
B Hamdou, J Gooth, A Dorn, E Pippel, K Nielsch
Applied Physics Letters 102 (22), 223110, 2013
482013
High-Mobility GaSb Nanostructures Cointegrated with InAs on Si
M Borg, H Schmid, J Gooth, M Rossell, D Cutaia, M Knoedler, N Bologna, ...
ACS Nano 11 (3), 2554, 2017
412017
Impact of the topological surface state on the thermoelectric transport in Sb2Te3 thin films
NF Hinsche, S Zastrow, J Gooth, L Pudewill, R Zierold, F Rittweger, ...
Acs Nano 9 (4), 4406, 2015
412015
Anomalous Nernst effect beyond the magnetization scaling relation in the ferromagnetic Heusler compound Co2MnGa
SN Guin, K Manna, J Noky, SJ Watzman, C Fu, N Kumar, W Schnelle, ...
NPG Asia Materials 11 (16), 2019
402019
Magnetothermopower and magnetoresistance of single Co-Ni/Cu multilayered nanowires
T Böhnert, AC Niemann, AK Michel, S Bäßler, J Gooth, BG Tóth, ...
Applied Physics Letters 103, 092407, 2013
382013
Thermoelectric power factor of ternary single-crystalline Sb2Te3-and Bi2Te3-based nanowires
S Bäßler, T Böhnert, J Gooth, C Schumacher, E Pippel, K Nielsch
Nanotechnology 24 (49), 495402, 2013
372013
From colossal to zero: Controlling the Anomalous Hall Effect in Magnetic Heusler Compounds via Berry Curvature Design
K Manna, L Muechler, TH Kao, R Stinshoff, Y Zhang, J Gooth, N Kumar, ...
Physical Review X 8, 041045, 2018
352018
Thermoelectric performance of classical topological insulator nanowires
J Gooth, JG Gluschke, R Zierold, M Leijnse, H Linke, K Nielsch
Semiconductor Science and Technology 30 (1), 015015, 2014
352014
Ballistic one-dimensional InAs nanowire cross-junction interconnects
J Gooth, M Borg, H Schmid, V Schaller, S Wirths, KE Moselund, M Luisier, ...
Nano Letters 17 (4), 2596, 2017
292017
Zero‐Field Nernst Effect in a Ferromagnetic Kagome‐Lattice Weyl‐Semimetal Co3Sn2S2
SN Guin, P Vir, Y Zhang, N Kumar, SJ Watzman, C Fu, E Liu, K Manna, ...
Advanced Materials, 1806622, 2019
282019
Thermopower engineering of Bi2Te3 without alloying: the interplay between nanostructuring and defect activation
C Bae, T Böhnert, J Gooth, S Lim, S Lee, H Kim, S Heimann, S Schulz, ...
Semiconductor Science and Technology 29 (6), 064003, 2014
282014
Resolving the Dirac cone on the surface of Bi2Te3 topological insulator nanowires by field-effect measurements
J Gooth, B Hamdou, A Dorn, R Zierold, K Nielsch
Applied Physics Letters 104 (24), 243115, 2014
272014
Berry phase and band structure analysis of the Weyl semimetal NbP
P Sergelius, J Gooth, S Bäßler, R Zierold, C Wiegand, A Niemann, ...
Scientific Reports 6, 33859, 2016
262016
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