Verified email at
Cited by
Cited by
Stranski-Krastanov growth mode during the molecular beam epitaxy of highly strained GaN
B Daudin, F Widmann, G Feuillet, Y Samson, M Arlery, JL Rouvière
Physical Review B 56 (12), R7069, 1997
Blue-light emission from GaN self-assembled quantum dots due to giant piezoelectric effect
F Widmann, J Simon, B Daudin, G Feuillet, JL Rouviere, NT Pelekanos, ...
Physical Review B 58 (24), R15989, 1998
Growth kinetics and optical properties of self-organized GaN quantum dots
F Widmann, B Daudin, G Feuillet, Y Samson, JL Rouvière, N Pelekanos
Journal of Applied Physics 83 (12), 7618-7624, 1998
Polarity determination of GaN films by ion channeling and convergent beam electron diffraction
B Daudin, JL Rouviere, M Arlery
Applied physics letters 69 (17), 2480-2482, 1996
Polarity determination for GaN films grown on (0001) sapphire and high-pressure-grown GaN single crystals
JL Rouviere, JL Weyher, M Seelmann-Eggebert, S Porowski
Applied physics letters 73 (5), 668-670, 1998
Confirmation of the Domino-Cascade Model by LiFePO4/FePO4 Precession Electron Diffraction
G Brunetti, D Robert, P Bayle-Guillemaud, JL Rouviere, EF Rauch, ...
Chemistry of Materials 23 (20), 4515-4524, 2011
Theoretical discussions on the geometrical phase analysis
JL Rouviere, E Sarigiannidou
Ultramicroscopy 106 (1), 1-17, 2005
Crystal structure and band gap determination of HfO2 thin films
MC Cheynet, S Pokrant, FD Tichelaar, JL Rouvière
Journal of Applied Physics 101 (5), 2007
Strain measurements by convergent-beam electron diffraction: The importance of stress relaxation in lamella preparations
L Clément, R Pantel, LF Kwakman, JL Rouvière
Applied physics letters 85 (4), 651-653, 2004
Improved quality GaN grown by molecular beam epitaxy using In as a surfactant
F Widmann, B Daudin, G Feuillet, N Pelekanos, JL Rouvière
Applied physics letters 73 (18), 2642-2644, 1998
Improved precision in strain measurement using nanobeam electron diffraction
A Béché, JL Rouvière, L Clément, JM Hartmann
Applied Physics Letters 95 (12), 2009
Recent advances in defect-selective etching of GaN
JL Weyher, PD Brown, JL Rouviere, T Wosinski, ARA Zauner, I Grzegory
Journal of Crystal Growth 210 (1-3), 151-156, 2000
Strain measurement at the nanoscale: Comparison between convergent beam electron diffraction, nano-beam electron diffraction, high resolution imaging and dark field electron …
A Béché, JL Rouvière, JP Barnes, D Cooper
Ultramicroscopy 131, 10-23, 2013
Growth of aluminum nitride on (111) silicon: microstructure and interface structure
A Bourret, A Barski, JL Rouviere, G Renaud, A Barbier
Journal of applied physics 83 (4), 2003-2009, 1998
Strain relaxation in (0001) AlN/GaN heterostructures
A Bourret, C Adelmann, B Daudin, JL Rouvière, G Feuillet, G Mula
Physical Review B 63 (24), 245307, 2001
Improved strain precision with high spatial resolution using nanobeam precession electron diffraction
JL Rouviere, A Béché, Y Martin, T Denneulin, D Cooper
Applied Physics Letters 103 (24), 2013
Control of gold surface diffusion on Si nanowires
MI den Hertog, JL Rouviere, F Dhalluin, PJ Desré, P Gentile, P Ferret, ...
Nano letters 8 (5), 1544-1550, 2008
Strain mapping of semiconductor specimens with nm-scale resolution in a transmission electron microscope
D Cooper, T Denneulin, N Bernier, A Béché, JL Rouvière
Micron 80, 145-165, 2016
Odd electron diffraction patterns in silicon nanowires and silicon thin films explained by microtwins and nanotwins
C Cayron, M Den Hertog, L Latu-Romain, C Mouchet, C Secouard, ...
Journal of Applied Crystallography 42 (2), 242-252, 2009
Preferential nucleation of GaN quantum dots at the edge of AlN threading dislocations
JL Rouviere, J Simon, N Pelekanos, B Daudin, G Feuillet
Applied Physics Letters 75 (17), 2632-2634, 1999
The system can't perform the operation now. Try again later.
Articles 1–20