Marc Meuris
Marc Meuris
imec / imomec
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On the correct extraction of interface trap density of MOS devices with high-mobility semiconductor substrates
K Martens, CO Chui, G Brammertz, B De Jaeger, D Kuzum, M Meuris, ...
IEEE Transactions on Electron Devices 55 (2), 547-556, 2008
Effective electrical passivation of Ge (100) for high-k gate dielectric layers using germanium oxide
A Delabie, F Bellenger, M Houssa, T Conard, S Van Elshocht, M Caymax, ...
Applied physics letters 91 (8), 2007
Germanium MOSFET devices: Advances in materials understanding, process development, and electrical performance
DP Brunco, B De Jaeger, G Eneman, J Mitard, G Hellings, A Satta, ...
Journal of The Electrochemical Society 155 (7), H552, 2008
Characterization of defects in 9.7% efficient Cu2ZnSnSe4-CdS-ZnO solar cells
G Brammertz, M Buffière, S Oueslati, H ElAnzeery, K Ben Messaoud, ...
Applied Physics Letters 103 (16), 2013
Diffusion, activation, and recrystallization of boron implanted in preamorphized and crystalline germanium
A Satta, E Simoen, T Clarysse, T Janssens, A Benedetti, B De Jaeger, ...
Applied Physics Letters 87 (17), 2005
The IMEC clean: A new concept for particle and metal removal on Si surfaces
M Meuris, PW Mertens, A Opdebeeck, HF Schmidt, M Depas, G Vereecke, ...
Solid State Technology 38 (7), 109-113, 1995
Passivation of Ge (100)∕ GeO2∕ high-κ gate stacks using thermal oxide treatments
F Bellenger, M Houssa, A Delabie, V Afanasiev, T Conard, M Caymax, ...
Journal of the Electrochemical Society 155 (2), G33, 2007
High performance Ge pMOS devices using a Si-compatible process flow
P Zimmerman, G Nicholas, B De Jaeger, B Kaczer, A Stesmans, ...
2006 International Electron Devices Meeting, 1-4, 2006
Record ION/IOFF performance for 65nm Ge pMOSFET and novel Si passivation scheme for improved EOT scalability
J Mitard, B De Jaeger, FE Leys, G Hellings, K Martens, G Eneman, ...
2008 IEEE International Electron Devices Meeting, 1-4, 2008
Ion-implantation issues in the formation of shallow junctions in germanium
E Simoen, A Satta, A D’Amore, T Janssens, T Clarysse, K Martens, ...
Materials science in semiconductor processing 9 (4-5), 634-639, 2006
P implantation doping of Ge: Diffusion, activation, and recrystallization
A Satta, T Janssens, T Clarysse, E Simoen, M Meuris, A Benedetti, ...
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006
Characteristic trapping lifetime and capacitance-voltage measurements of GaAs metal-oxide-semiconductor structures
G Brammertz, K Martens, S Sioncke, A Delabie, M Caymax, M Meuris, ...
Applied Physics Letters 91 (13), 2007
Optimisation of a thin epitaxial Si layer as Ge passivation layer to demonstrate deep sub-micron n-and p-FETs on Ge-On-Insulator substrates
B De Jaeger, R Bonzom, F Leys, O Richard, J Van Steenbergen, ...
Microelectronic engineering 80, 26-29, 2005
Deposition of HfO2 on germanium and the impact of surface pretreatments
S Van Elshocht, B Brijs, M Caymax, T Conard, T Chiarella, S De Gendt, ...
Applied physics letters 85 (17), 3824-3826, 2004
Method and apparatus for removing a liquid from a surface of a rotating substrate
P Mertens, M Meuris, M Heyns
US Patent 6,491,764, 2002
Capacitance-voltage characterization of GaAs–Al2O3 interfaces
G Brammertz, HC Lin, K Martens, D Mercier, S Sioncke, A Delabie, ...
Applied Physics Letters 93 (18), 2008
Electrical study of sulfur passivated In0. 53Ga0. 47As MOS capacitor and transistor with ALD Al2O3 as gate insulator
HC Lin, WE Wang, G Brammertz, M Meuris, M Heyns
Microelectronic Engineering 86 (7-9), 1554-1557, 2009
Atomic layer deposition of hafnium oxide on germanium substrates
A Delabie, RL Puurunen, B Brijs, M Caymax, T Conard, B Onsia, ...
Journal of applied physics 97 (6), 2005
Ge dangling bonds at the (100) Ge/GeO2 interface and the viscoelastic properties of GeO2
M Houssa, G Pourtois, M Caymax, M Meuris, MM Heyns, VV Afanas’Ev, ...
Applied Physics Letters 93 (16), 2008
Diffusion, activation, and regrowth behavior of high dose P implants in Ge
A Satta, E Simoen, R Duffy, T Janssens, T Clarysse, A Benedetti, ...
Applied Physics Letters 88 (16), 2006
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