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Jean-Michel Sallese
Jean-Michel Sallese
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Cited by
Year
FCC-ee: the lepton collider: future circular collider conceptual design report volume 2
AEA Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, ...
The European Physical Journal Special Topics 228, 261-623, 2019
1128*2019
FCC physics opportunities
A Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, JA Fernandez, ...
The European Physical Journal C 79 (6), 1-161, 2019
5792019
A capacitor-less 1T-DRAM cell
S Okhonin, M Nagoga, JM Sallese, P Fazan
IEEE Electron Device Letters 23 (2), 85-87, 2002
3032002
Charge-based modeling of junctionless double-gate field-effect transistors
JM Sallese, N Chevillon, C Lallement, B Iniguez, F Prégaldiny
IEEE Transactions on Electron Devices 58 (8), 2628-2637, 2011
2672011
A SOI capacitor-less 1T-DRAM concept
S Okhonin, M Nagoga, JM Sallese, P Fazan
2001 IEEE International SOI Conference. Proceedings (Cat. No. 01CH37207 …, 2001
2582001
A design oriented charge-based current model for symmetric DG MOSFET and its correlation with the EKV formalism
JM Sallese, F Krummenacher, F Prégaldiny, C Lallement, A Roy, C Enz
Solid-State Electronics 49 (3), 485-489, 2005
2102005
HE-LHC: the high-energy large hadron collider: future circular collider conceptual design report volume 4
A Abada, M Abbrescia, SS AbdusSalam, I Abdyukhanov, ...
The European Physical Journal Special Topics 228, 1109-1382, 2019
1692019
Analytical model for ultra-thin body junctionless symmetric double gate MOSFETs in subthreshold regime
F Jazaeri, L Barbut, A Koukab, JM Sallese
Solid-State Electronics 82, 103-110, 2013
1512013
Inversion charge linearization in MOSFET modeling and rigorous derivation of the EKV compact model
JM Sallese, M Bucher, F Krummenacher, P Fazan
Solid-State Electronics 47 (4), 677-683, 2003
1312003
A review on quantum computing: From qubits to front-end electronics and cryogenic MOSFET physics
F Jazaeri, A Beckers, A Tajalli, JM Sallese
2019 MIXDES-26th International Conference" Mixed Design of Integrated …, 2019
1172019
Hall effect sensors design, integration and behavior analysis
MA Paun, JM Sallese, M Kayal
Journal of Sensor and Actuator Networks 2 (1), 85-97, 2013
1032013
A closed-form charge-based expression for drain current in symmetric and asymmetric double gate MOSFET
AS Roy, JM Sallese, CC Enz
Solid-State Electronics 50 (4), 687-693, 2006
802006
A novel approach to charge-based non-quasi-static model of the MOS transistor valid in all modes of operation
JM Sallese, AS Porret
Solid-State Electronics 44 (6), 887-894, 2000
742000
Explicit compact model for symmetric double-gate MOSFETs including solutions for small-geometry effects
B Diagne, F Prégaldiny, C Lallement, JM Sallese, F Krummenacher
Solid-State Electronics 52 (1), 99-106, 2008
702008
A compact non-quasi-static extension of a charge-based MOS model
AS Porret, JM Sallese, CC Enz
IEEE Transactions on Electron Devices 48 (8), 1647-1654, 2001
662001
Modeling nanowire and double-gate junctionless field-effect transistors
F Jazaeri, JM Sallese
Cambridge University Press, 2018
592018
Capacitor-less 1-transistor DRAM
Fazan, Okhonin, Nagoga, Sallese, Portmann, Ferrant, Kayal, Pastre, ...
2002 IEEE International SOI Conference, 10-13, 2002
582002
Comparative study on the performance of five different Hall effect devices
MA Paun, JM Sallese, M Kayal
Sensors 13 (2), 2093-2112, 2013
572013
A common core model for junctionless nanowires and symmetric double-gate FETs
JM Sallese, F Jazaeri, L Barbut, N Chevillon, C Lallement
IEEE transactions on electron devices 60 (12), 4277-4280, 2013
552013
Modeling and design space of junctionless symmetric DG MOSFETs with long channel
F Jazaeri, L Barbut, JM Sallese
IEEE transactions on electron devices 60 (7), 2120-2127, 2013
542013
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