E. Cruz-Hernández

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LOPEZ-LOPEZ MPhysics Department. CinvestavVerified email at fis.cinvestav.mx
Juan Salvador Rojas RamirezPostdoctoral Research Scientis, Ingram School of Engineering, Texas State UniversityVerified email at txstate.edu
Reyna Mendez CamachoCentro de Investigación y de Estudios Avanzados CINVESTAV-IPNVerified email at cinvestav.mx
Andrei Gorbatchevprofesor UASLP IICOVerified email at cactus.iico.uaslp.mx
Salvador Gallardo-HernandezPhysics Department Cinvestav-IPNVerified email at fis.cinvestav.mx
Isaac Martínez-VelisCENTRO ESTATAL DE CANCEROLOGIA DEL ESTADO DE DURANGOVerified email at fis.cinvestav.mx
miguel melendez-liraDepto. de Fisica, Cinvestav-IPN y Depto. de Ciencias Basicas, UAM-AzcapotzalcoVerified email at fis.cinvestav.mx
Ramón Castañeda-PriegoProfessor of Physics, Sciences and Engineering Division, University of GuanajuatoVerified email at fisica.ugto.mx
Manolo Ramírez LópezINSTITUTO POLITÉCNICO NACIONALVerified email at ipn.mx
Luis Zamora-PeredoCentro de Investigación en Micro y Nanotecnología, Universidad VeracruzanaVerified email at uv.mx
Angel G. RodriguezUniversidad Autonoma de San Luis PotosiVerified email at uaslp.mx
Ciro FalconyProfessor of Physics, Pysics Department CINVESTAV-IPNVerified email at fis.cinvestav.mx
Alberto Herrera-GomezCINVESTAV-Unidad QueretaroVerified email at cinvestav.mx
P. G. Mani-GonzálezUACJVerified email at uacj.mx
Yenny L. Casallas-Morenosección de estudios de posgrado e Investigación, Unidad Profesional Interdisciplinaria en IngenieríaVerified email at ipn.mx
D Valdez-PérezInstituto Politécnico Nacional. SEPI-ESIME-Zac, CDMX. MEXVerified email at ipn.mx
Arturo Ponce PedrazaVerified email at utsa.edu
Jose Luis Sanchez LlamazaresSenior Researcher, Instituto Potosino de Investigación Científica y Tecnológica A.C.Verified email at ipicyt.edu.mx
Cristo YeeFacultad de Ciencias Físico - Matemáticas, Universidad Autónoma de SinaloaVerified email at uas.edu.mx
E. López LunaCIACyT, Universidad Autónoma de San Luis PotosíVerified email at uaslp.mx

E. Cruz-Hernández

Professor at CIACYT-UASLP, S. L. P., México.

Verified email at uaslp.mx

Materials science Physics of nanostructures


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Highly ordered self-assembled nanoscale periodic faceting in GaAs (631) homoepitaxial growth E Cruz-Hernández, S Shimomura, VH Méndez-García Applied Physics Letters 101 (7), 2012	14	2012
SIMS characterization of segregation in InAs/GaAs heterostructures S Gallardo, Y Kudriatsev, A Villegas, G Ramírez, R Asomoza, ... Applied Surface Science 255 (4), 1341-1344, 2008	14	2008
Molecular beam epitaxial growth of GaAs on (631) oriented substrates E Cruz-Hernandez, A Pulzara-Mora, FJ Ramírez-Arenas, ... Japanese journal of applied physics 44 (12L), L1556, 2005	13	2005
Molecular Beam Epitaxial Growth of GaAs on (631) Oriented Substrates E Cruz-Hernandez, A Pulzara-Mora, FJ Ramírez-Arenas, ... Jpn. J. Appl. Phys 44, L1556, 2005	13	2005
Study of the pseudo-(1× 1) surface by RHEED and XPS for InGaN/GaN (0001)/Al2O3 heterostructures grown by PA-MBE E Cruz-Hernández, M Ramirez-Lopez, M Pérez-Caro, PG Mani-Gonzalez, ... Journal of crystal growth 378, 295-298, 2013	10	2013
Photoreflectance study of InAs quantum dots on GaAs (n 1 1) substrates JS Rojas-Ramírez, A Pulzara-Mora, E Cruz-Hernández, A Perez-Centeno, ... Physica E: Low-dimensional Systems and Nanostructures 32 (1-2), 139-143, 2006	10	2006
Wigner crystallization in quantum wires within the Yukawa approximation R Méndez-Camacho, E Cruz-Hernández, R Castaneda-Priego Physical Review B 95 (8), 085437, 2017	8	2017
Effect of surface states on the electrical properties of MBE grown modulation doped AlGaAs/GaAs A Cisneros-de-la-Rosa, IE Cortes-Mestizo, E Cruz-Hernández, ... Journal of Vacuum Science & Technology B 32 (2), 2014	8	2014
Study of optical properties of GaAsN layers prepared by molecular beam epitaxy A Pulzara-Mora, E Cruz-Hernandez, J Rojas-Ramirez, ... Journal of crystal growth 301, 565-569, 2007	8	2007
Structure and homoepitaxial growth of GaAs (6 3 1) VH Méndez-García, FJ Ramirez-Arenas, A Lastras-Martínez, ... Applied surface science 252 (15), 5530-5533, 2006	8	2006
Nanostructure formation during relatively high temperature growth of Mn-doped GaAs by molecular beam epitaxy A Del Río-De Santiago, VH Méndez-García, I Martínez-Velis, ... Applied Surface Science 333, 92-95, 2015	7	2015
As-pressure influence on the surface corrugation in the homoepitaxial growth of GaAs (6 3 1) A E Cruz-Hernández, S Shimomura, M López-López, D Vázquez-Cortes, ... Journal of Crystal Growth 316 (1), 149-152, 2011	7	2011
Structural and optical properties of InAs quantum dots grown by molecular beam epitaxy A Pulzara-Mora, E Cruz-Hernández, JS Rojas-Ramírez, ... Microelectronics journal 39 (11), 1248-1250, 2008	7	2008
Study of the conduction‐type conversion in Si‐doped (631) A GaAs layers grown by molecular beam epitaxy E Cruz‐Hernández, D Vázquez‐Cortés, S Shimomura, ... physica status solidi c 8 (2), 282-284, 2011	6	2011
Study of the GaAs MBE growth on (6 3 1)-oriented substrates by Raman spectroscopy E Cruz-Hernandez, A Pulzara-Mora, J Rojas-Ramirez, ... Journal of crystal growth 301, 884-888, 2007	6	2007
Tunneling between parallel one-dimensional Wigner crystals R Mendez-Camacho, E Cruz-Hernandez Scientific Reports 12 (1), 4470, 2022	5	2022
Nanowire Y-junction formation during self-faceting on high-index GaAs substrates R Méndez-Camacho, M López-López, VH Méndez-García, ... RSC advances 7 (29), 17813-17818, 2017	5	2017
New orientations in the stereographic triangle for self-assembled faceting R Méndez-Camacho, VH Méndez-García, M López-López, ... AIP Advances 6 (6), 2016	5	2016
Electrical and optical properties of Si doped GaAs (631) layers studied as a function of the growth temperature D Vazquez-Cortas, S Shimomura, M Lopez-Lopez, E Cruz-Hernandez, ... Journal of crystal growth 347 (1), 77-81, 2012	5	2012
Study of the homoepitaxial growth of GaAs on (631) oriented substrates E Cruz-Hernández, JS Rojas-Ramírez, C Vázquez-López, ... Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 2006	5	2006

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