| Neuromorphic computing using non-volatile memory GW Burr, RM Shelby, A Sebastian, S Kim, S Kim, S Sidler, K Virwani, ... Advances in Physics: X 2 (1), 89-124, 2017 | 980 | 2017 |
| Experimental demonstration and tolerancing of a large-scale neural network (165 000 synapses) using phase-change memory as the synaptic weight element GW Burr, RM Shelby, S Sidler, C Di Nolfo, J Jang, I Boybat, RS Shenoy, ... IEEE Transactions on Electron Devices 62 (11), 3498-3507, 2015 | 963 | 2015 |
| Organic core-sheath nanowire artificial synapses with femtojoule energy consumption W Xu, SY Min, H Hwang, TW Lee Science advances 2 (6), e1501326, 2016 | 404 | 2016 |
| Access devices for 3D crosspoint memory GW Burr, RS Shenoy, K Virwani, P Narayanan, A Padilla, B Kurdi, ... Journal of Vacuum Science & Technology B, Nanotechnology and …, 2014 | 376 | 2014 |
| Improved Synaptic Behavior Under Identical Pulses Using AlOx/HfO2 Bilayer RRAM Array for Neuromorphic Systems J Woo, K Moon, J Song, S Lee, M Kwak, J Park, H Hwang IEEE Electron Device Letters 37 (8), 994-997, 2016 | 375 | 2016 |
| Excellent Selector Characteristics of Nanoscalefor High-Density Bipolar ReRAM Applications M Son, J Lee, J Park, J Shin, G Choi, S Jung, W Lee, S Kim, S Park, ... IEEE Electron Device Letters 32 (11), 1579-1581, 2011 | 305 | 2011 |
| Analog memory and spike-timing-dependent plasticity characteristics of a nanoscale titanium oxide bilayer resistive switching device K Seo, I Kim, S Jung, M Jo, S Park, J Park, J Shin, KP Biju, J Kong, K Lee, ... Nanotechnology 22 (25), 254023, 2011 | 295 | 2011 |
| Neuromorphic hardware system for visual pattern recognition with memristor array and CMOS neuron M Chu, B Kim, S Park, H Hwang, M Jeon, BH Lee, BG Lee IEEE Transactions on Industrial Electronics 62 (4), 2410-2419, 2014 | 274 | 2014 |
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| Reproducible hysteresis and resistive switching in metal--metal heterostructures R Dong, DS Lee, WF Xiang, SJ Oh, DJ Seong, SH Heo, HJ Choi, ... Applied physics letters 90 (4), 042107, 2007 | 231 | 2007 |
| Three‐dimensional integration of organic resistive memory devices S Song, B Cho, TW Kim, Y Ji, M Jo, G Wang, M Choe, YH Kahng, ... Advanced Materials 22 (44), 5048-5052, 2010 | 226 | 2010 |
| Optimization of Conductance Change in Pr1–xCaxMnO3-Based Synaptic Devices for Neuromorphic Systems JW Jang, S Park, GW Burr, H Hwang, YH Jeong IEEE Electron Device Letters 36 (5), 457-459, 2015 | 220 | 2015 |
| Resistance switching of the nonstoichiometric zirconium oxide for nonvolatile memory applications D Lee, H Choi, H Sim, D Choi, H Hwang, MJ Lee, SA Seo, IK Yoo IEEE electron device letters 26 (10), 719-721, 2005 | 212 | 2005 |
| HfZrOx-Based Ferroelectric Synapse Device With 32 Levels of Conductance States for Neuromorphic Applications S Oh, T Kim, M Kwak, J Song, J Woo, S Jeon, IK Yoo, H Hwang IEEE Electron Device Letters 38 (6), 732-735, 2017 | 206 | 2017 |
| Rewritable switching of one diode–one resistor nonvolatile organic memory devices B Cho, TW Kim, S Song, Y Ji, M Jo, H Hwang, GY Jung, T Lee Advanced Materials 22 (11), 1228-1232, 2010 | 201 | 2010 |
| RRAM-based synapse for neuromorphic system with pattern recognition function S Park, H Kim, M Choo, J Noh, A Sheri, S Jung, K Seo, J Park, S Kim, ... 2012 international electron devices meeting, 10.2. 1-10.2. 4, 2012 | 194 | 2012 |
| Resistance switching of copper doped films for nonvolatile memory applications D Lee, D Seong, I Jo, F Xiang, R Dong, S Oh, H Hwang Applied Physics Letters 90 (12), 122104, 2007 | 184 | 2007 |
| Effect of hygroscopic nature on the electrical characteristics of lanthanide oxides and S Jeon, H Hwang Journal of Applied Physics 93 (10), 6393-6395, 2003 | 181 | 2003 |
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Jiyong WooKyungpook National UniversityVerified email at knu.ac.kr
