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Michael Haugk
Michael Haugk
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Verified email at fam-haugk.de
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Cited by
Year
Self-consistent-charge density-functional tight-binding method for simulations of complex materials properties
M Elstner, D Porezag, G Jungnickel, J Elsner, M Haugk, T Frauenheim, ...
Physical Review B 58 (11), 7260, 1998
40321998
Deep acceptors trapped at threading-edge dislocations in GaN
J Elsner, R Jones, MI Heggie, PK Sitch, M Haugk, T Frauenheim, S Öberg, ...
Physical Review B 58 (19), 12571, 1998
3731998
Stability of large vacancy clusters in silicon
TEM Staab, A Sieck, M Haugk, MJ Puska, T Frauenheim, HS Leipner
Physical review B 65 (11), 115210, 2002
822002
Effect of oxygen on the growth of (101̄0) GaN surfaces: The formation of nanopipes
J Elsner, R Jones, M Haugk, R Gutierrez, T Frauenheim, MI Heggie, ...
Applied physics letters 73 (24), 3530-3532, 1998
761998
Magic number vacancy aggregates in Si and GaAs–structure and positron lifetime studies
TEM Staab, M Haugk, A Sieck, T Frauenheim, HS Leipner
Physica B: Condensed Matter 273, 501-504, 1999
611999
Structures, Energetics and Electronic Properties of Complex III—V Semiconductor Systems
M Haugk, J Elsner, T Frauenheim, TEM Staab, CD Latham, R Jones, ...
physica status solidi (b) 217 (1), 473-511, 2000
572000
Theory of Ga, N and H terminated GaN (0001)/(0001) surfaces
J Eisner, M Haugk, R Gutierrez, T Frauenheim
MRS Online Proceedings Library (OPL) 482, 1997
531997
Do arsenic interstitials really exist in As-rich GaAs?
TEM Staab, RM Nieminen, J Gebauer, R Krause-Rehberg, M Luysberg, ...
Physical Review Letters 87 (4), 045504, 2001
502001
A density-functional based tight-binding approach to GaAs surface reconstructions
M Haugk, J Elsner, T Frauenheim
Journal of Physics: Condensed Matter 9 (35), 7305, 1997
371997
Vacancy clusters in plastically deformed semiconductors
HS Leipner, CG Hübner, TEM Staab, M Haugk, A Sieck, ...
Journal of Physics: Condensed Matter 12 (49), 10071, 2000
232000
A theoretical study of O chemisorption on GaN (0 0 0 1)/(0 0 0 1̄) surfaces
J Elsner, R Gutierrez, B Hourahine, R Jones, M Haugk, T Frauenheim
Solid state communications 108 (12), 953-958, 1998
231998
An ab initio two-center tight-binding approach to simulations of complex materials properties
T Frauenheim, D Porezag, M Elstner, G Jungnickel, J Elsner, M Haugk, ...
MRS Online Proceedings Library (OPL) 491, 1997
221997
Interaction of oxygen with threading dislocations in GaN
R Jones, J Elsner, M Haugk, R Gutierrez, T Frauenheim, MI Heggie, ...
physica status solidi (a) 171 (1), 167-173, 1999
211999
Reconstructions of the Si-terminated (100) surface in : A theoretical study
R Gutierrez, M Haugk, J Elsner, G Jungnickel, M Elstner, A Sieck, ...
Physical Review B 60 (3), 1771, 1999
191999
Positron annihilation at dislocations and related point defects in semiconductors
HS Leipner, CG Hübner, TEM Staab, M Haugk, R Krause‐Rehberg
physica status solidi (a) 171 (1), 377-382, 1999
181999
A density-functional based tight-binding approach to III–V semiconductor clusters
J Eisner, M Haugk, G Jungnickel, T Frauenheim
Journal of Materials Chemistry 6 (10), 1649-1656, 1996
171996
Density-functional calculations of carbon diffusion in GaAs
CD Latham, M Haugk, R Jones, T Frauenheim, PR Briddon
Physical Review B 60 (22), 15117, 1999
151999
A parallel code for a self-consistent charge density functional based tight binding method: Total energy calculations for extended systems
M Haugk, J Elsner, T Heine, T Frauenheim, G Seifert
Computational materials science 13 (4), 239-251, 1999
141999
Domain boundaries on {112¯ 0} planes in GaN: A theoretical study
J Elsner, M Kaukonen, MI Heggie, M Haugk, T Frauenheim, R Jones
Physical Review B 58 (23), 15347, 1998
141998
Structural models for the reconstruction of the surface and their relative stabilities
M Haugk, J Elsner, M Sternberg, T Frauenheim
Journal of Physics: Condensed Matter 10 (21), 4523, 1998
121998
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