| First-principles investigation of graphene fluoride and graphane O Leenaerts, H Peelaers, AD Hernández-Nieves, B Partoens, FM Peeters Physical Review B 82 (19), 195436, 2010 | 401 | 2010 |
| Effects of strain on band structure and effective masses in MoS 2 H Peelaers, CG Van de Walle Physical Review B 86 (24), 241401, 2012 | 396 | 2012 |
| High-voltage field effect transistors with wide-bandgap β-Ga2O3 nanomembranes WS Hwang, A Verma, H Peelaers, V Protasenko, S Rouvimov, H Xing, ... Applied Physics Letters 104 (20), 203111, 2014 | 267 | 2014 |
| Hydrogenated cation vacancies in semiconducting oxides JB Varley, H Peelaers, A Janotti, CG Van de Walle Journal of Physics: Condensed Matter 23 (33), 334212, 2011 | 204 | 2011 |
| Brillouin zone and band structure of β‐Ga2O3 H Peelaers, CG Van de Walle physica status solidi (b) 252 (4), 828-832, 2015 | 174 | 2015 |
| Nature and evolution of the band-edge states in MoS 2: From monolayer to bulk JE Padilha, H Peelaers, A Janotti, CG Van de Walle Physical Review B 90 (20), 205420, 2014 | 122 | 2014 |
| Formation and segregation energies of B and P doped and BP codoped silicon nanowires H Peelaers, B Partoens, FM Peeters Nano letters 6 (12), 2781-2784, 2006 | 119 | 2006 |
| Exciton-dominated Dielectric Function of Atomically Thin MoS2 Films Y Yu, Y Yu, Y Cai, W Li, A Gurarslan, H Peelaers, DE Aspnes, ... Scientific reports 5, 16996, 2015 | 116 | 2015 |
| Fundamental limits on optical transparency of transparent conducting oxides: Free-carrier absorption in SnO2 H Peelaers, E Kioupakis, CG Van de Walle Applied Physics Letters 100 (1), 011914, 2012 | 92 | 2012 |
| Fundamental limits on the electron mobility of β-Ga2O3 Y Kang, K Krishnaswamy, H Peelaers, CG Van de Walle Journal of Physics: Condensed Matter 29 (23), 234001, 2017 | 91 | 2017 |
| Structural and electronic properties of Ga2O3-Al2O3 alloys H Peelaers, JB Varley, JS Speck, CG Van de Walle Applied Physics Letters 112 (24), 242101, 2018 | 83 | 2018 |
| Vibrational properties of graphene fluoride and graphane H Peelaers, AD Hernandez-Nieves, O Leenaerts, B Partoens, FM Peeters Applied Physics Letters 98 (5), 051914, 2011 | 77 | 2011 |
| (In x Ga 1− x) 2 O 3 alloys for transparent electronics H Peelaers, D Steiauf, JB Varley, A Janotti, CG Van de Walle Physical Review B 92 (8), 085206, 2015 | 59 | 2015 |
| Phonon band structure of Si nanowires: a stability analysis H Peelaers, B Partoens, FM Peeters Nano letters 9 (1), 107-111, 2009 | 58 | 2009 |
| First-principles study of van der Waals interactions in MoS2 and MoO3 H Peelaers, CG Van de Walle Journal of Physics: Condensed Matter 26 (30), 305502, 2014 | 53 | 2014 |
| Elastic Constants and Pressure-Induced Effects in MoS2 H Peelaers, CG Van de Walle The Journal of Physical Chemistry C 118 (22), 12073-12076, 2014 | 49 | 2014 |
| First-principles study of the mobility of SrTiO 3 B Himmetoglu, A Janotti, H Peelaers, A Alkauskas, CG Van de Walle Physical Review B 90 (24), 241204, 2014 | 48 | 2014 |
| Properties of B and P doped Ge nanowires H Peelaers, B Partoens, FM Peeters Applied physics letters 90 (26), 263103, 2007 | 47 | 2007 |
| Doping of with transition metals H Peelaers, CG Van de Walle Physical Review B 94 (19), 195203, 2016 | 43 | 2016 |
| Deep acceptors and their diffusion in Ga2O3 H Peelaers, JL Lyons, JB Varley, CG Van de Walle APL Materials 7 (2), 022519, 2019 | 37 | 2019 |
Chris G. Van de WalleProfessor of Materials, University of California, Santa BarbaraVerified email at mrl.ucsb.edu
