Folgen
Jean Fompeyrine
Jean Fompeyrine
IBM Research GmbH
Bestätigte E-Mail-Adresse bei zurich.ibm.com
Titel
Zitiert von
Zitiert von
Jahr
Doubling the critical temperature of La1. 9Sr0. 1CuO4 using epitaxial strain
JP Locquet, J Perret, J Fompeyrine, E Mächler, JW Seo, G Van Tendeloo
Nature 394 (6692), 453-456, 1998
7821998
Direct observation of the alignment of ferromagnetic spins by antiferromagnetic spins
F Nolting, A Scholl, J Stöhr, JW Seo, J Fompeyrine, H Siegwart, ...
Nature 405 (6788), 767-769, 2000
5872000
Observation of antiferromagnetic domains in epitaxial thin films
A Scholl, J Stohr, J Luning, JW Seo, J Fompeyrine, H Siegwart, ...
Science 287 (5455), 1014-1016, 2000
4092000
Large Pockels effect in micro-and nanostructured barium titanate integrated on silicon
S Abel, F Eltes, JE Ortmann, A Messner, P Castera, T Wagner, D Urbonas, ...
Nature materials 18 (1), 42-47, 2019
3962019
The 2016 oxide electronic materials and oxide interfaces roadmap
M Lorenz, MSR Rao, T Venkatesan, E Fortunato, P Barquinha, ...
Journal of Physics D: Applied Physics 49 (43), 433001, 2016
3432016
A strong electro-optically active lead-free ferroelectric integrated on silicon
S Abel, T Stöferle, C Marchiori, C Rossel, MD Rossell, R Erni, D Caimi, ...
Nature communications 4 (1), 1671, 2013
3282013
Epitaxial growth and properties of doped transition metal and complex oxide films
SA Chambers
Advanced Materials 22 (2), 219-248, 2010
2602010
Compound semiconductor structure
S Abel, L Czornomaz, J Fompeyrine, M El Kazzi
US Patent 9,337,265, 2016
1832016
High-K dielectrics for the gate stack
JP Locquet, C Marchiori, M Sousa, J Fompeyrine, JW Seo
Journal of Applied Physics 100 (5), 2006
1712006
A BaTiO3-Based Electro-Optic Pockels Modulator Monolithically Integrated on an Advanced Silicon Photonics Platform
F Eltes, C Mai, D Caimi, M Kroh, Y Popoff, G Winzer, D Petousi, S Lischke, ...
Journal of Lightwave Technology 37 (5), 1456-1462, 2019
1492019
Antiferromagnetic LaFeO3 thin films and their effect on exchange bias
JW Seo, EE Fullerton, F Nolting, A Scholl, J Fompeyrine, JP Locquet
Journal of Physics: Condensed Matter 20 (26), 264014, 2008
1432008
Determination of the antiferromagnetic spin axis in epitaxial films by x-ray magnetic linear dichroism spectroscopy
J Lüning, F Nolting, A Scholl, H Ohldag, JW Seo, J Fompeyrine, ...
Physical Review B 67 (21), 214433, 2003
1312003
A hybrid barium titanate–silicon photonics platform for ultraefficient electro-optic tuning
S Abel, T Stöferle, C Marchiori, D Caimi, L Czornomaz, M Stuckelberger, ...
Journal of Lightwave Technology 34 (8), 1688-1693, 2016
1282016
Low-Loss BaTiO3–Si Waveguides for Nonlinear Integrated Photonics
F Eltes, D Caimi, F Fallegger, M Sousa, E O’Connor, MD Rossell, ...
Acs Photonics 3 (9), 1698-1703, 2016
1172016
International Electron Devices Meeting
B Govoreanu, GS Kar, YY Chen, V Paraschiv, S Kubicek, A Fantini, ...
Washington DC 31 (1), 2011
1172011
Inversion mode n-channel GaAs field effect transistor with high-k/metal gate
JP De Souza, E Kiewra, Y Sun, A Callegari, DK Sadana, G Shahidi, ...
Applied Physics Letters 92 (15), 2008
1162008
An integrated optical modulator operating at cryogenic temperatures
F Eltes, GE Villarreal-Garcia, D Caimi, H Siegwart, AA Gentile, A Hart, ...
Nature Materials 19 (11), 1164-1168, 2020
1152020
Field-effect transistors with SrHfO3 as gate oxide
C Rossel, B Mereu, C Marchiori, D Caimi, M Sousa, A Guiller, H Siegwart, ...
Applied physics letters 89 (5), 2006
1112006
Microstructure and ferroelectricity of BaTiO3 thin films on Si for integrated photonics
KJ Kormondy, Y Popoff, M Sousa, F Eltes, D Caimi, MD Rossell, M Fiebig, ...
Nanotechnology 28 (7), 075706, 2017
1002017
Confined epitaxial lateral overgrowth (CELO): A novel concept for scalable integration of CMOS-compatible InGaAs-on-insulator MOSFETs on large-area Si substrates
L Czornomaz, E Uccelli, M Sousa, V Deshpande, V Djara, D Caimi, ...
2015 Symposium on VLSI Technology (VLSI Technology), T172-T173, 2015
962015
Das System kann den Vorgang jetzt nicht ausführen. Versuchen Sie es später erneut.
Artikel 1–20