| Continuous wave operation of a mid-infrared semiconductor laser at room temperature M Beck, D Hofstetter, T Aellen, J Faist, U Oesterle, M Ilegems, E Gini, ... science 295 (5553), 301-305, 2002 | 1185 | 2002 |
| Infrared lattice vibrations and free-electron dispersion in GaN AS Barker Jr, M Ilegems Physical Review B 7 (2), 743, 1973 | 937 | 1973 |
| Absorption, reflectance, and luminescence of GaN epitaxial layers R Dingle, DD Sell, SE Stokowski, M Ilegems Physical Review B 4 (4), 1211, 1971 | 761 | 1971 |
| Measurement of cavity-polariton dispersion curve from angle-resolved photoluminescence experiments R Houdré, C Weisbuch, RP Stanley, U Oesterle, P Pellandini, M Ilegems Physical Review Letters 73 (15), 2043, 1994 | 596 | 1994 |
| Vacuum-field Rabi splitting in the presence of inhomogeneous broadening: Resolution of a homogeneous linewidth in an inhomogeneously broadened system R Houdré, RP Stanley, M Ilegems Physical Review A 53 (4), 2711, 1996 | 382 | 1996 |
| Donor-acceptor pair recombination in GaN R Dingle, M Ilegems Solid State Communications 9 (3), 175-180, 1971 | 368 | 1971 |
| Phase equilibria in ternary III–V systems MB Panish, M Ilegems Progress in Solid State Chemistry 7, 39-83, 1972 | 343 | 1972 |
| High-quality AlInN for high index contrast Bragg mirrors lattice matched to GaN JF Carlin, M Ilegems Applied physics letters 83 (4), 668-670, 2003 | 328 | 2003 |
| Beryllium doping and diffusion in molecular‐beam epitaxy of GaAs and AlxGa1−xAs M Ilegems Journal of Applied Physics 48 (3), 1278-1287, 1977 | 305 | 1977 |
| Saturation of the strong-coupling regime in a semiconductor microcavity: Free-carrier bleaching of cavity polaritons R Houdré, JL Gibernon, P Pellandini, RP Stanley, U Oesterle, ... Physical Review B 52 (11), 7810, 1995 | 290 | 1995 |
| Room-temperature cavity polaritons in a semiconductor microcavity R Houdré, RP Stanley, U Oesterle, M Ilegems, C Weisbuch Physical Review B 49 (23), 16761, 1994 | 288 | 1994 |
| Electrical properties of n-type vapor-grown gallium nitride M Ilegems, HC Montgomery Journal of Physics and Chemistry of Solids 34 (5), 885-895, 1973 | 288 | 1973 |
| Study of electron traps in n‐GaAs grown by molecular beam epitaxy DV Lang, AY Cho, AC Gossard, M Ilegems, W Wiegmann Journal of Applied Physics 47 (6), 2558-2564, 1976 | 249 | 1976 |
| Luminescence of Be‐and Mg‐doped GaN M Ilegems, R Dingle Journal of Applied Physics 44 (9), 4234-4235, 1973 | 223 | 1973 |
| Luminescence of Zn‐and Cd‐doped GaN M Ilegems, R Dingle, RA Logan Journal of Applied Physics 43 (9), 3797-3800, 1972 | 221 | 1972 |
| Far-infrared electroluminescence in a quantum cascade structure M Rochat, J Faist, M Beck, U Oesterle, M Ilegems Applied physics letters 73 (25), 3724-3726, 1998 | 217 | 1998 |
| Infrared Reflection Spectra of Mixed Crystals M Ilegems, GL Pearson Physical Review B 1 (4), 1576, 1970 | 213 | 1970 |
| Optical and electrical properties of Mn‐doped GaAs grown by molecular‐beam epitaxy M Ilegems, R Dingle, LW Rupp Jr Journal of Applied Physics 46 (7), 3059-3065, 1975 | 192 | 1975 |
| Coupled semiconductor microcavities RP Stanley, R Houdre, U Oesterle, M Ilegems, C Weisbuch Applied Physics Letters 65 (16), 2093-2095, 1994 | 188 | 1994 |
| Continuous wave operation of a 9.3 μm quantum cascade laser on a Peltier cooler D Hofstetter, M Beck, T Aellen, J Faist, U Oesterle, M Ilegems, E Gini, ... Applied Physics Letters 78 (14), 1964-1966, 2001 | 180 | 2001 |
