High breakdown single-crystal GaN pn diodes by molecular beam epitaxy M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ... Applied Physics Letters 107 (23), 2015 | 66 | 2015 |
Impact of line-edge roughness on double-gate Schottky-barrier field-effect transistors S Yu, Y Zhao, L Zeng, G Du, J Kang, R Han, X Liu IEEE transactions on electron devices 56 (6), 1211-1219, 2009 | 27 | 2009 |
3-D simulation of geometrical variations impact on nanoscale FinFETs S Yu, Y Zhao, Y Song, G Du, J Kang, R Han, X Liu 2008 9th International Conference on Solid-State and Integrated-Circuit …, 2008 | 21 | 2008 |
A computational study of dopant-segregated Schottky barrier MOSFETs L Zeng, XY Liu, YN Zhao, YH He, G Du, JF Kang, RQ Han IEEE transactions on nanotechnology 9 (1), 108-113, 2009 | 20 | 2009 |
The impact of line edge roughness on the stability of a FinFET SRAM S Yu, Y Zhao, G Du, J Kang, R Han, X Liu Semiconductor science and technology 24 (2), 025005, 2008 | 19 | 2008 |
Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases Y Zhao, W Chen, W Li, M Zhu, Y Yue, B Song, J Encomendero, ... Applied Physics Letters 105 (17), 2014 | 16 | 2014 |
Via-hole fabrication for III-V triple-junction solar cells Y Zhao, P Fay, A Wibowo, J Liu, C Youtsey Journal of Vacuum Science & Technology B 30 (6), 2012 | 16 | 2012 |
Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl4/Ar Y Zhao, P Fay, A Wibowo, C Youtsey Journal of Vacuum Science & Technology B 31 (6), 2013 | 9 | 2013 |
Performance evaluation of GaAs–gap core–shell-nanowire field-effect transistors Y He, Y Zhao, C Fan, J Kang, R Han, X Liu IEEE Transactions on electron devices 56 (6), 1199-1203, 2009 | 9 | 2009 |
Simulation of inhomogeneous strain in Ge-Si core-shell nanowires Y He, Y Zhao, C Fan, X Liu, R Han Frontiers of Electrical and Electronic Engineering in China 4, 342-347, 2009 | 8 | 2009 |
Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core–Shell Nanowire H Xu, X Liu, G Du, Y Zhao, Y He, C Fan, R Han, J Kang Japanese Journal of Applied Physics 49 (4S), 04DN01, 2010 | 7 | 2010 |
Full 3-D simulation of gate line edge roughness impact on sub-30nm FinFETs S Yu, Y Zhao, Y Song, G Du, J Kang, R Han, X Liu 2008 IEEE Silicon Nanoelectronics Workshop, 1-2, 2008 | 6 | 2008 |
On accuracy estimation and comparison of results in biometric research D Mery, Y Zhao, K Bowyer | 5 | 2016 |
Variability induced by line edge roughness in double-gate dopant-segregated Schottky MOSFETs Y Yang, S Yu, L Zeng, G Du, J Kang, Y Zhao, R Han, X Liu IEEE transactions on nanotechnology 10 (2), 244-249, 2009 | 5 | 2009 |
Impact of inhomogeneous strain on the valence band structures of Ge-Si core-shell nanowires Y He, C Fan, YN Zhao, G Du, XY Liu, R Han 2008 International Conference on Simulation of Semiconductor Processes and …, 2008 | 5 | 2008 |
High-voltage polarization-induced vertical heterostructure pn junction diodes on bulk GaN substrates M Qi, K Namoto, M Zhu, Z Hu, Y Zhao, B Song, G Li, P Fay, H Xing, ... 2015 73rd Annual Device Research Conference (DRC), 31-32, 2015 | 4 | 2015 |
Emerging electronic devices for THz sensing and imaging P Fay, Y Xie, Y Zhao, Z Jiang, S Rahman, H Xing, B Sensale-Rodriguez, ... Terahertz Emitters, Receivers, and Applications V 9199, 124-132, 2014 | 4 | 2014 |
Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation S Yu, Y Zhao, G Du, J Kang, R Han, X Liu 2008 IEEE International Conference on Electron Devices and Solid-State …, 2008 | 2 | 2008 |
An analytical 2D current model of double-gate Schottky-barrier MOSFETs YN Zhao, G Du, JF Kang, XY Liu, R Han 2008 International Conference on Simulation of Semiconductor Processes and …, 2008 | 2 | 2008 |
Radial boundary forces-modulated valence band structure of Ge (110) nanowire H Xu, Y He, Y Zhao, G Du, J Kang, R Han, X Liu, C Fan 2009 13th International Workshop on Computational Electronics, 1-4, 2009 | 1 | 2009 |