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Yuning zhao
Yuning zhao
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Year
High breakdown single-crystal GaN pn diodes by molecular beam epitaxy
M Qi, K Nomoto, M Zhu, Z Hu, Y Zhao, V Protasenko, B Song, X Yan, G Li, ...
Applied Physics Letters 107 (23), 2015
662015
Impact of line-edge roughness on double-gate Schottky-barrier field-effect transistors
S Yu, Y Zhao, L Zeng, G Du, J Kang, R Han, X Liu
IEEE transactions on electron devices 56 (6), 1211-1219, 2009
272009
3-D simulation of geometrical variations impact on nanoscale FinFETs
S Yu, Y Zhao, Y Song, G Du, J Kang, R Han, X Liu
2008 9th International Conference on Solid-State and Integrated-Circuit …, 2008
212008
A computational study of dopant-segregated Schottky barrier MOSFETs
L Zeng, XY Liu, YN Zhao, YH He, G Du, JF Kang, RQ Han
IEEE transactions on nanotechnology 9 (1), 108-113, 2009
202009
The impact of line edge roughness on the stability of a FinFET SRAM
S Yu, Y Zhao, G Du, J Kang, R Han, X Liu
Semiconductor science and technology 24 (2), 025005, 2008
192008
Direct electrical observation of plasma wave-related effects in GaN-based two-dimensional electron gases
Y Zhao, W Chen, W Li, M Zhu, Y Yue, B Song, J Encomendero, ...
Applied Physics Letters 105 (17), 2014
162014
Via-hole fabrication for III-V triple-junction solar cells
Y Zhao, P Fay, A Wibowo, J Liu, C Youtsey
Journal of Vacuum Science & Technology B 30 (6), 2012
162012
Inductively coupled plasma etching of through-cell vias in III–V multijunction solar cells using SiCl4/Ar
Y Zhao, P Fay, A Wibowo, C Youtsey
Journal of Vacuum Science & Technology B 31 (6), 2013
92013
Performance evaluation of GaAs–gap core–shell-nanowire field-effect transistors
Y He, Y Zhao, C Fan, J Kang, R Han, X Liu
IEEE Transactions on electron devices 56 (6), 1199-1203, 2009
92009
Simulation of inhomogeneous strain in Ge-Si core-shell nanowires
Y He, Y Zhao, C Fan, X Liu, R Han
Frontiers of Electrical and Electronic Engineering in China 4, 342-347, 2009
82009
Effects of Shell Strain on Valence Band Structure and Transport Properties of Ge/Si1-xGex Core–Shell Nanowire
H Xu, X Liu, G Du, Y Zhao, Y He, C Fan, R Han, J Kang
Japanese Journal of Applied Physics 49 (4S), 04DN01, 2010
72010
Full 3-D simulation of gate line edge roughness impact on sub-30nm FinFETs
S Yu, Y Zhao, Y Song, G Du, J Kang, R Han, X Liu
2008 IEEE Silicon Nanoelectronics Workshop, 1-2, 2008
62008
On accuracy estimation and comparison of results in biometric research
D Mery, Y Zhao, K Bowyer
52016
Variability induced by line edge roughness in double-gate dopant-segregated Schottky MOSFETs
Y Yang, S Yu, L Zeng, G Du, J Kang, Y Zhao, R Han, X Liu
IEEE transactions on nanotechnology 10 (2), 244-249, 2009
52009
Impact of inhomogeneous strain on the valence band structures of Ge-Si core-shell nanowires
Y He, C Fan, YN Zhao, G Du, XY Liu, R Han
2008 International Conference on Simulation of Semiconductor Processes and …, 2008
52008
High-voltage polarization-induced vertical heterostructure pn junction diodes on bulk GaN substrates
M Qi, K Namoto, M Zhu, Z Hu, Y Zhao, B Song, G Li, P Fay, H Xing, ...
2015 73rd Annual Device Research Conference (DRC), 31-32, 2015
42015
Emerging electronic devices for THz sensing and imaging
P Fay, Y Xie, Y Zhao, Z Jiang, S Rahman, H Xing, B Sensale-Rodriguez, ...
Terahertz Emitters, Receivers, and Applications V 9199, 124-132, 2014
42014
Impact of stochastic mismatch on FinFETs SRAM cell induced by process variation
S Yu, Y Zhao, G Du, J Kang, R Han, X Liu
2008 IEEE International Conference on Electron Devices and Solid-State …, 2008
22008
An analytical 2D current model of double-gate Schottky-barrier MOSFETs
YN Zhao, G Du, JF Kang, XY Liu, R Han
2008 International Conference on Simulation of Semiconductor Processes and …, 2008
22008
Radial boundary forces-modulated valence band structure of Ge (110) nanowire
H Xu, Y He, Y Zhao, G Du, J Kang, R Han, X Liu, C Fan
2009 13th International Workshop on Computational Electronics, 1-4, 2009
12009
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