| Reflectance-difference spectroscopy of (001) GaAs surfaces in ultrahigh vacuum I Kamiya, DE Aspnes, LT Florez, JP Harbison Physical Review B 46 (24), 15894, 1992 | 393 | 1992 |
| Surface science at atmospheric pressure: Reconstructions on (001) GaAs in organometallic chemical vapor deposition I Kamiya, DE Aspnes, H Tanaka, LT Florez, JP Harbison, R Bhat Physical review letters 68 (5), 627, 1992 | 276 | 1992 |
| Reflectance‐difference spectroscopy system for real‐time measurements of crystal growth DE Aspnes, JP Harbison, AA Studna, LT Florez Applied physics letters 52 (12), 957-959, 1988 | 183* | 1988 |
| Field ion-scanning tunneling microscopy T Sakurai, T Hashizume, I Kamiya, Y Hasegawa, N Sano, HW Pickering, ... Progress in surface science 33 (1), 3-89, 1990 | 155 | 1990 |
| Imaging and probing electronic properties of self-assembled InAs quantum dots by atomic force microscopy with conductive tip I Tanaka, I Kamiya, H Sakaki, N Qureshi, SJ Allen Jr, PM Petroff Applied physics letters 74 (6), 844-846, 1999 | 124 | 1999 |
| Surface state analysis of photobrightening in CdSe nanocrystal thin films H Asami, Y Abe, T Ohtsu, I Kamiya, M Hara The Journal of Physical Chemistry B 107 (46), 12566-12568, 2003 | 121 | 2003 |
| Surface state analysis of photobrightening in CdSe nanocrystal thin films H Asami, Y Abe, T Ohtsu, I Kamiya, M Hara The Journal of Physical Chemistry B 107 (46), 12566-12568, 2003 | 121 | 2003 |
| In situ determination of free‐carrier concentrations by reflectance difference spectroscopy H Tanaka, E Colas, I Kamiya, DE Aspnes, R Bhat Applied physics letters 59 (26), 3443-3445, 1991 | 108 | 1991 |
| Field ion‐scanning tunneling microscopy of alkali metal adsorption on the Si (100) surface T Hashizume, Y Hasegawa, I Kamiya, T Ide, I Sumita, S Hyodo, T Sakurai, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (1 …, 1990 | 99 | 1990 |
| Relationship among reflectance‐difference spectroscopy, surface photoabsorption, and spectroellipsometry K Hingerl, DE Aspnes, I Kamiya, LT Florez Applied physics letters 63 (7), 885-887, 1993 | 97 | 1993 |
| Adsorption of Li (K) on the Si (001)-(2× 1) surface: scanning-tunneling-microscopy study Y Hasegawa, I Kamiya, T Hashizume, T Sakurai, H Tochihara, M Kubota, ... Physical Review B 41 (14), 9688, 1990 | 89 | 1990 |
| Electron transport properties of Si nanosheets: Transition from direct tunneling to Fowler-Nordheim tunneling T Ikuno, H Okamoto, Y Sugiyama, H Nakano, F Yamada, I Kamiya Applied Physics Letters 99 (2), 023107, 2011 | 88 | 2011 |
| Arsenic dimers and multilayers on (001) GaAs surfaces in atmospheric pressure organometallic chemical vapor deposition I Kamiya, H Tanaka, DE Aspnes, LT Florez, E Colas, JP Harbison, R Bhat Applied physics letters 60 (10), 1238-1240, 1992 | 78 | 1992 |
| T. lde, I. Sumita, HW Pickering and S. Hyodo T Sakurai, Y Hasegawa, T Hashizume, I Kamiya J. Vac. Sci. Technol. A 8, 259, 1990 | 66 | 1990 |
| Optical spectroscopy of (001) GaAs and AlAs under molecular‐beam epitaxy growth conditions M Wassermeier, I Kamiya, DE Aspnes, LT Florez, JP Harbison, PM Petroff Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1991 | 63 | 1991 |
| Cluster formation of Li on the Si (111) 7× 7 surface Y Hasegawa, I Kamiya, T Hashizume, T Sakurai, H Tochihara, M Kubota, ... Journal of Vacuum Science & Technology A: Vacuum, Surfaces, and Films 8 (1 …, 1990 | 56 | 1990 |
| In situ real-time X-ray reciprocal space mapping during InGaAs/GaAs growth for understanding strain relaxation mechanisms T Sasaki, H Suzuki, A Sai, JH Lee, M Takahasi, S Fujikawa, K Arafune, ... Applied physics express 2 (8), 085501, 2009 | 55 | 2009 |
| Temperature dependence of electronic energy transfer in PbS quantum dot films W Lü, I Kamiya, M Ichida, H Ando Applied Physics Letters 95 (8), 2009 | 50 | 2009 |
| Atomic layer epitaxy on (001) GaAs: Real‐time spectroscopy DE Aspnes, I Kamiya, H Tanaka, R Bhat Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1992 | 49 | 1992 |
| Real-time observation of anisotropic strain relaxation by three-dimensional reciprocal space mapping during InGaAs/GaAs (001) growth H Suzuki, T Sasaki, A Sai, Y Ohshita, I Kamiya, M Yamaguchi, M Takahasi, ... Applied Physics Letters 97 (4), 2010 | 48 | 2010 |
Yukio HasegawaInstitute for Solid Stata Physics, The University of TokyoVerified email at issp.u-tokyo.ac.jp
