Davide Sacchetto
Davide Sacchetto
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Fully textured monolithic perovskite/silicon tandem solar cells with 25.2% power conversion efficiency
F Sahli, J Werner, BA Kamino, M Bräuninger, R Monnard, ...
Nature materials 17 (9), 820-826, 2018
Efficient near-infrared-transparent perovskite solar cells enabling direct comparison of 4-terminal and monolithic perovskite/silicon tandem cells
J Werner, L Barraud, A Walter, M Bräuninger, F Sahli, D Sacchetto, ...
ACS Energy Letters 1 (2), 474-480, 2016
Polarity control in double-gate, gate-all-around vertically stacked silicon nanowire FETs
M De Marchi, D Sacchetto, S Frache, J Zhang, PE Gaillardon, Y Leblebici, ...
2012 International Electron Devices Meeting, 8.4. 1-8.4. 4, 2012
Memristive-biosensors: A new detection method by using nanofabricated memristors
S Carrara, D Sacchetto, MA Doucey, C Baj-Rossi, G De Micheli, ...
Sensors and Actuators B: Chemical 171, 449-457, 2012
Zinc tin oxide as high-temperature stable recombination layer for mesoscopic perovskite/silicon monolithic tandem solar cells
J Werner, A Walter, E Rucavado, SJ Moon, D Sacchetto, M Rienaecker, ...
Applied Physics Letters 109 (23), 2016
Configurable logic gates using polarity-controlled silicon nanowire gate-all-around FETs
M De Marchi, J Zhang, S Frache, D Sacchetto, PE Gaillardon, Y Leblebici, ...
IEEE Electron Device Letters 35 (8), 880-882, 2014
Top–down fabrication of gate-all-around vertically stacked silicon nanowire FETs with controllable polarity
M De Marchi, D Sacchetto, J Zhang, S Frache, PE Gaillardon, Y Leblebici, ...
IEEE transactions on Nanotechnology 13 (6), 1029-1038, 2014
Fabrication and characterization of vertically stacked gate-all-around Si nanowire FET arrays
D Sacchetto, MH Ben-Jamaa, G De Micheli, Y Leblebici
2009 Proceedings of the European Solid State Device Research Conference, 245-248, 2009
Polarity-controllable silicon nanowire transistors with dual threshold voltages
J Zhang, M De Marchi, D Sacchetto, PE Gaillardon, Y Leblebici, ...
IEEE Transactions on Electron Devices 61 (11), 3654-3660, 2014
Energy/reliability trade-offs in low-voltage ReRAM-based non-volatile flip-flop design
I Kazi, P Meinerzhagen, PE Gaillardon, D Sacchetto, Y Leblebici, A Burg, ...
IEEE Transactions on Circuits and Systems I: Regular Papers 61 (11), 3155-3164, 2014
ITO/MoOx/a-Si: H (i) hole-selective contacts for silicon heterojunction solar cells: degradation mechanisms and cell integration
D Sacchetto, Q Jeangros, G Christmann, L Barraud, A Descoeudres, ...
IEEE Journal of Photovoltaics 7 (6), 1584-1590, 2017
Design and architectural assessment of 3-D resistive memory technologies in FPGAs
PE Gaillardon, D Sacchetto, GB Beneventi, MHB Jamaa, L Perniola, ...
IEEE Transactions on Nanotechnology 12 (1), 40-50, 2012
Applications of multi-terminal memristive devices: A review
D Sacchetto, PE Gaillardon, M Zervas, S Carrara, G De Micheli, ...
IEEE Circuits and Systems Magazine 13 (2), 23-41, 2013
Multiterminal memristive nanowire devices for logic and memory applications: A review
D Sacchetto, G De Micheli, Y Leblebici
Proceedings of the IEEE 100 (6), 2008-2020, 2011
GMS: Generic memristive structure for non-volatile FPGAs
PE Gaillardon, D Sacchetto, S Bobba, Y Leblebici, G De Micheli
2012 IEEE/IFIP 20th International Conference on VLSI and System-on-Chip …, 2012
New insight on bio-sensing by nano-fabricated memristors
D Sacchetto, MA Doucey, G De Micheli, Y Leblebici, S Carrara
BioNanoScience 1, 1-3, 2011
Closing the cell-to-module efficiency gap: A fully laser scribed perovskite minimodule with 16% steady-state aperture area efficiency
A Walter, SJ Moon, BA Kamino, L Löfgren, D Sacchetto, F Matteocci, ...
IEEE Journal of Photovoltaics 8 (1), 151-155, 2017
Memristive biosensors under varying humidity conditions
F Puppo, A Dave, MA Doucey, D Sacchetto, C Baj-Rossi, Y Leblebici, ...
IEEE Transactions on NanoBioscience 13 (1), 19-30, 2014
Nanowire systems: Technology and design
PE Gaillardon, LG Amarù, S Bobba, M De Marchi, D Sacchetto, ...
Philosophical Transactions of the Royal Society A: Mathematical, Physical …, 2014
Ambipolar silicon nanowire field effect transistor
G De Micheli, Y Leblebici, M De Marchi, D Sacchetto
US Patent 9,252,252, 2016
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