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Luca De Michielis
Luca De Michielis
Verified email at iis.ee.ethz.ch
Title
Cited by
Cited by
Year
Complementary germanium electron–hole bilayer tunnel FET for sub-0.5-V operation
L Lattanzio, L De Michielis, AM Ionescu
IEEE Electron Device Letters 33 (2), 167-169, 2011
1212011
Understanding the superlinear onset of tunnel-FET output characteristic
L De Michielis, L Lattanzio, AM Ionescu
IEEE Electron Device Letters 33 (11), 1523-1525, 2012
1062012
The electron–hole bilayer tunnel FET
L Lattanzio, L De Michielis, AM Ionescu
Solid-State Electronics 74, 85-90, 2012
922012
Fabrication and characterization of gate-all-around silicon nanowires on bulk silicon
V Pott, KE Moselund, D Bouvet, L De Michielis, AM Ionescu
IEEE transactions on nanotechnology 7 (6), 733-744, 2008
852008
Ultra low power: Emerging devices and their benefits for integrated circuits
AM Ionescu, L De Michielis, N Dagtekin, G Salvatore, J Cao, A Rusu, ...
2011 International Electron Devices Meeting, 16.1. 1-16.1. 4, 2011
742011
Electron-hole bilayer tunnel FET for steep subthreshold swing and improved ON current
L Lattanzio, L De Michielis, AM Ionescu
2011 Proceedings of the European Solid-State Device Research Conference …, 2011
622011
Bended gate-all-around nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
AMI K. Moselund, L. De Michielis, V. Pott
2007 IEEE International Electron Devices Meeting, 191-194, 2007
552007
Tunneling and occupancy probabilities: How do they affect tunnel-FET behavior?
L De Michielis, L Lattanzio, KE Moselund, H Riel, AM Ionescu
IEEE electron device letters 34 (6), 726-728, 2013
472013
The high-mobility bended n-channel silicon nanowire transistor
KE Moselund, M Najmzadeh, P Dobrosz, SH Olsen, D Bouvet, ...
IEEE transactions on electron devices 57 (4), 866-876, 2010
472010
Quantum mechanical study of the germanium electron–hole bilayer tunnel FET
C Alper, L Lattanzio, L De Michielis, P Palestri, L Selmi, AM Ionescu
IEEE transactions on electron devices 60 (9), 2754-2760, 2013
442013
Tunnel-FET architecture with improved performance due to enhanced gate modulation of the tunneling barrier
L De Michielis, L Lattanzio, P Palestri, L Selmi, AM Ionescu
69th Device Research Conference, 111-112, 2011
422011
The hysteretic ferroelectric tunnel FET
AM Ionescu, L Lattanzio, GA Salvatore, L De Michielis, K Boucart, ...
IEEE transactions on electron devices 57 (12), 3518-3524, 2010
412010
Tunnel FET with non-uniform gate capacitance for improved device and circuit level performance
C Alper, L De Michielis, N Dağtekin, L Lattanzio, D Bouvet, AM Ionescu
Solid-State Electronics 84, 205-210, 2013
402013
On the static and dynamic behavior of the germanium electron-hole bilayer tunnel FET
L Lattanzio, N Dagtekin, L De Michielis, AM Ionescu
IEEE transactions on electron devices 59 (11), 2932-2938, 2012
392012
Silicon nanowires with lateral uniaxial tensile stress profiles for high electron mobility gate-all-around MOSFETs
M Najmzadeh, L De Michielis, D Bouvet, P Dobrosz, S Olsen, AM Ionescu
Microelectronic engineering 87 (5-8), 1561-1565, 2010
242010
An innovative band-to-band tunneling analytical model and implications in compact modeling of tunneling-based devices
L De Michielis, N Dağtekin, A Biswas, L Lattanzio, L Selmi, M Luisier, ...
Applied Physics Letters 103 (12), 123509, 2013
172013
Corner effect and local volume inversion in SiNW FETs
L De Michielis, KE Moselund, L Selmi, AM Ionescu
IEEE transactions on nanotechnology 10 (4), 810-816, 2010
162010
Effect of the choice of the tunnelling path on semi-classical numerical simulations of TFET devices
L De Michielis, M Iellina, P Palestri, AM Ionescu, L Selmi
Solid-state electronics 71, 7-12, 2012
132012
Semiconductor tunneling device
C Alper, L Lattanzio, MA Ionescu, L De Michielis, N Dagtekin
US Patent 9,768,311, 2017
122017
3300V HiPak2 modules with enhanced trench (TSPT+) IGBTs and field charge extraction diodes rated up to 1800A
C Corvasce, M Andenna, S Matthias, L Storasta, A Kopta, M Rahimo, ...
PCIM Europe 2016; International Exhibition and Conference for Power …, 2016
122016
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