Munaf Rahimo
Munaf Rahimo
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Freewheeling diode reverse-recovery failure modes in IGBT applications
MT Rahimo, NYA Shammas
IEEE Transactions on industry applications 37 (2), 661-670, 2001
The Bi-mode Insulated Gate Transistor (BiGT) A potential technology for higher power applications
M Rahimo, A Kopta, U Schlapbach, J Vobecky, R Schnell, S Klaka
2009 21st International Symposium on Power Semiconductor Devices & IC's, 283-286, 2009
Characterization of a silicon IGBT and silicon carbide MOSFET cross-switch hybrid
M Rahimo, F Canales, RA Minamisawa, C Papadopoulos, U Vemulapati, ...
IEEE Transactions on Power Electronics 30 (9), 4638-4642, 2015
4.5 kV press pack IGBT designed for ruggedness and reliability
S Eicher, M Rahimo, E Tsyplakov, D Schneider, A Kopta, U Schlapbach, ...
Conference Record of the 2004 IEEE Industry Applications Conference, 2004 …, 2004
Novel enhanced-planar IGBT technology rated up to 6.5 kV for lower losses and higher SOA capability
M Rahimo, A Kopta, S Linder
2006 IEEE International Symposium on Power Semiconductor Devices and IC's, 1-4, 2006
Switching-Self-Clamping-Mode" SSCM", a breakthrough in SOA performance for high voltage IGBTs and diodes
Rahimo, Kopta, Eicher, Schlapbach, Linder
2004 Proceedings of the 16th International Symposium on Power Semiconductor …, 2004
1MW bi-directional DC solid state circuit breaker based on air cooled reverse blocking-IGCT
F Agostini, U Vemulapati, D Torresin, M Arnold, M Rahimo, A Antoniazzi, ...
2015 IEEE Electric Ship Technologies Symposium (ESTS), 287-292, 2015
Characterization of 6.5 kV IGBTs for high-power medium-frequency soft-switched applications
D Dujic, GK Steinke, M Bellini, M Rahimo, L Storasta, JK Steinke
IEEE Transactions on power electronics 29 (2), 906-919, 2013
A high current 3300V module employing reverse conducting IGBTs setting a new benchmark in output power capability
M Rahimo, U Schlapbach, A Kopta, J Vobecky, D Schneider, ...
2008 20th International Symposium on Power Semiconductor Devices and IC's, 68-71, 2008
The field charge extraction (FCE) diode: a novel technology for soft recovery high voltage diodes
A Kopta, M Rahimo
Proceedings. ISPSD'05. The 17th International Symposium on Power …, 2005
Topologies, voltage ratings and state of the art high power semiconductor devices for medium voltage wind energy conversion
B Backlund, M Rahimo, S Klaka, J Siefken
2009 IEEE Power Electronics and Machines in Wind Applications, 1-6, 2009
Limitation of the short-circuit ruggedness of high-voltage IGBTs
A Kopta, M Rahimo, U Schlapbach, N Kaminski, D Silber
2009 21st International Symposium on Power Semiconductor Devices & IC's, 33-36, 2009
Recent advancements in IGCT technologies for high power electronics applications
U Vemulapati, M Rahimo, M Arnold, T Wikström, J Vobecky, B Backlund, ...
2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015
The radial layout design concept for the bi-mode insulated gate transistor
L Storasta, M Rahimo, M Bellini, A Kopta, UR Vemulapati, N Kaminski
2011 IEEE 23rd International Symposium on Power Semiconductor Devices and …, 2011
A comparison of charge dynamics in the reverse-conducting RC IGBT and bi-mode insulated gate transistor BiGT
L Storasta, A Kopta, M Rahimo
2010 22nd International Symposium on Power Semiconductor Devices & IC's …, 2010
Current sharing behavior in Si IGBT and SiC MOSFET cross-switch hybrid
RA Minamisawa, U Vemulapati, A Mihaila, C Papadopoulos, M Rahimo
IEEE Electron Device Letters 37 (9), 1178-1180, 2016
The corrugated P-base IGCT-a new benchmark for large area SQA scaling
T Wikstrom, T Stiasny, M Rahimo, D Cottet, P Streit
Proceedings of the 19th International Symposium on Power Semiconductor …, 2007
1200V IGBTs operating at 200° C? An investigation on the potentials and the design constraints
U Schlapbach, M Rahimo, C Von Arx, A Mukhitdinov, S Linder
Proceedings of the 19th International Symposium on Power Semiconductor …, 2007
Optimization of the reverse recovery behavior of fast power diodes using injection efficiency and lifetime control techniques
MT Rahimo
Proc. EPE'97, Trondheim, Norway, 2.099-2.104, 1997
Reverse blocking IGCT optimised for 1 kV DC bi‐directional solid state circuit breaker
U Vemulapati, M Arnold, M Rahimo, A Antoniazzi, D Pessina
IET Power Electronics 8 (12), 2308-2314, 2015
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