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Meyer jr
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Band parameters for III–V compound semiconductors and their alloys
I Vurgaftman, JR Meyer, LR Ram-Mohan
Journal of applied physics 89 (11), 5815-5875, 2001
Band parameters for nitrogen-containing semiconductors
I Vurgaftman, JR Meyer
Journal of Applied Physics 94 (6), 3675-3696, 2003
Type‐II quantum‐well lasers for the mid‐wavelength infrared
JR Meyer, CA Hoffman, FJ Bartoli, LR Ram‐Mohan
Applied physics letters 67 (6), 757-759, 1995
Auger lifetime enhancement in InAs–Ga1−xInxSb superlattices
ER Youngdale, JR Meyer, CA Hoffman, FJ Bartoli, CH Grein, PM Young, ...
Applied physics letters 64 (23), 3160-3162, 1994
Optical heating in semiconductors: Laser damage in Ge, Si, InSb, and GaAs
JR Meyer, MR Kruer, FJ Bartoli
Journal of Applied Physics 51 (10), 5513-5522, 1980
Semimetal-to-semiconductor transition in bismuth thin films
CA Hoffman, JR Meyer, FJ Bartoli, A Di Venere, XJ Yi, CL Hou, HC Wang, ...
Physical Review B 48 (15), 11431, 1993
Rebalancing of internally generated carriers for mid-infrared interband cascade lasers with very low power consumption
I Vurgaftman, WW Bewley, CL Canedy, CS Kim, M Kim, CD Merritt, J Abell, ...
Nature communications 2 (1), 1-7, 2011
Interband cascade lasers
I Vurgaftman, R Weih, M Kamp, JR Meyer, CL Canedy, CS Kim, M Kim, ...
Journal of Physics D: Applied Physics 48 (12), 123001, 2015
Type-II and type-I interband cascade lasers
JR Meyer, I Vurgaftman, RQ Yang, LR Ram-Mohan
Electronics Letters 32 (1), 45-46, 1996
Graded band gap for dark-current suppression in long-wave infrared W-structured type-II superlattice photodiodes
I Vurgaftman, EH Aifer, CL Canedy, JG Tischler, JR Meyer, JH Warner, ...
Applied physics letters 89 (12), 121114, 2006
Auger coefficients in type-II quantum wells
JR Meyer, CL Felix, WW Bewley, I Vurgaftman, EH Aifer, LJ Olafsen, ...
Applied physics letters 73 (20), 2857-2859, 1998
Interband cascade laser emitting at in continuous wave above room temperature
M Kim, CL Canedy, WW Bewley, CS Kim, JR Lindle, J Abell, I Vurgaftman, ...
Applied physics letters 92 (19), 191110, 2008
Antisite defects of Bi 2 Te 3 thin films
S Cho, Y Kim, A DiVenere, GK Wong, JB Ketterson, JR Meyer
Applied physics letters 75 (10), 1401-1403, 1999
Electron Band Structure Parameters Chapter 2
I Vurgaftman, JR Meyer
John Wiley & Sons, 2007
Improved quantitative mobility spectrum analysis for Hall characterization
I Vurgaftman, JR Meyer, CA Hoffman, D Redfern, J Antoszewski, ...
Journal of Applied Physics 84 (9), 4966-4973, 1998
W-structured type-II superlattice long-wave infrared photodiodes with high quantum efficiency
EH Aifer, JG Tischler, JH Warner, I Vurgaftman, WW Bewley, JR Meyer, ...
Applied physics letters 89 (5), 053519, 2006
Near-room-temperature mid-infrared interband cascade laser
LJ Olafsen, EH Aifer, I Vurgaftman, WW Bewley, CL Felix, JR Meyer, ...
Applied physics letters 72 (19), 2370-2372, 1998
Methods for magnetotransport characterization of IR detector materials
JR Meyer, CA Hoffman, FJ Bartoli, DA Arnold, S Sivananthan, JP Fauri
Semiconductor Science and Technology 8 (6S), 805, 1993
Optical heating in semiconductors
JR Meyer, FJ Bartoli, MR Kruer
Physical Review B 21 (4), 1559, 1980
Continuous-wave operation of broadened-waveguide W quantum-well diode lasers up to
WW Bewley, H Lee, I Vurgaftman, RJ Menna, CL Felix, RU Martinelli, ...
Applied Physics Letters 76 (3), 256-258, 2000
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