| Modeling the threshold voltage of core-and-outer gates of ultra-thin nanotube Junctionless-double gate-all-around (NJL-DGAA) MOSFETs N Kumar, V Purwar, H Awasthi, R Gupta, K Singh, S Dubey Microelectronics Journal 113, 105104, 2021 | 26 | 2021 |
| A novel approach to model threshold voltage and subthreshold current of graded-doped junctionless-gate-all-around (GD-JL-GAA) MOSFETs V Gupta, H Awasthi, N Kumar, AK Pandey, A Gupta Silicon, 1-9, 2021 | 14 | 2021 |
| A Novel Approach to Investigate the Impact of Hetero-High-K Gate Stack on SiGe Junctionless Gate-All-Around (JL-GAA) MOSFET A Gupta, S Rai, N Kumar, D Sigroha, A Kishore, V Pathak, ZU Rahman Silicon, 1-8, 2021 | 13 | 2021 |
| Impact of temperature variation on analog, hot-carrier injection and linearity parameters of nanotube junctionless double-gate-all-around (NJL-DGAA) MOSFETs N Kumar, H Awasthi, V Purwar, A Gupta, S Dubey Silicon 14 (6), 2679-2686, 2022 | 12 | 2022 |
| Impact of temperature on analog/RF performance of dielectric pocket gate-all-around (DPGAA) MOSFETs H Awasthi, N Kumar, V Purwar, R Gupta, S Dubey Silicon 13 (7), 2071-2075, 2021 | 11 | 2021 |
| Investigating linearity and effect of temperature variation on analog/RF performance of dielectric pocket high-k double gate-all-around (DP-DGAA) MOSFETs V Purwar, R Gupta, N Kumar, H Awasthi, VK Dixit, K Singh, S Dubey, ... Applied Physics A 126, 1-8, 2020 | 9 | 2020 |
| Thermal conductivity model to analyze the thermal implications in nanowire FETs N Kumar, PK Kaushik, S Kumar, A Gupta, P Singh IEEE Transactions on Electron Devices 69 (11), 6388-6393, 2022 | 8 | 2022 |
| Impact of ambient temperature and thermal resistance on device performance of junctionless silicon-nanotube FET N Kumar, PK Kaushik, A Gupta, P Singh Nanotechnology 33 (33), 335201, 2022 | 8 | 2022 |
| Temperature-dependent analytical modeling of graded-channel gate-all-around (GC-GAA) junctionless field-effect transistors (JLFETs) V Gupta, N Kumar, H Awasthi, S Rai, AK Pandey, A Gupta Journal of Electronic Materials 50, 3686-3691, 2021 | 5 | 2021 |
| An analysis of Si-tube based double-material double gate-all-around (DMDGAA) MOSFEts. ICE3.(2020) N Kumar, H Awasthi, V Purwar, A Gupta, A Gupta | 5 | |
| Electro-thermal characteristics of junctionless nanowire gate-all-around transistors using compact thermal conductivity model N Kumar, S Kumar, PK Kaushik, A Gupta, P Singh IEEE Transactions on Electron Devices, 2023 | 4 | 2023 |
| Simulation-based study of current gain peaks h 21 at low gate bias in AlGaN/GaN HEMTs PK Kaushik, S Awasthi, N Kumar, U Goyal, M Mishra, A Gupta, A Basu Engineering Research Express 4 (2), 025042, 2022 | 3 | 2022 |
| Self-heating effects (SHEs) in gate-all-around FETs with horizontally stacked multiple junctionless nanowires N Kumar, PK Kaushik, A Gupta, P Singh 2022 IEEE Delhi Section Conference (DELCON), 1-4, 2022 | 3 | 2022 |
| Self-Heating Mapping of the Experimental Device and Its Optimization in Advance Sub-5nm Node Junctionless Multi-Nanowire FETs N Kumar, S Pali, A Gupta, P Singh IEEE Transactions on Device and Materials Reliability, 2023 | 2 | 2023 |
| Drain extended MOS body region engineering for switching reliability under unclamped inductive load conditions S Pali, N Kumar, A Gupta IEEE Transactions on Device and Materials Reliability 23 (1), 134-141, 2023 | 2 | 2023 |
| An analysis of Si-tube based double-material double gate-all-around (DMDGAA) MOSFETs N Kumar, H Awasthi, V Purwar, A Gupta, A Gupta 2020 International Conference on Electrical and Electronics Engineering …, 2020 | 2 | 2020 |
| Tunable Piezoresistive NEMS Pressure Sensor Simulation Under Various Environmental Conditions N Kumar, A Gupta, P Singh, SC Mukhopadhyay IEEE Sensors Letters, 2023 | 1 | 2023 |
| Electro-Thermal Properties and Self-Heating Effect in Multi-Nanosheet FETs: Junctionless Mode Versus Inversion Mode N Kumar, KK Bhinge, A Gupta, P Singh 7th IEEE Electron Devices Technology and Manufacturing (EDTM) Conference 2023, 2023 | 1 | 2023 |
| Self-Heating Effect in Sub-5nm Node Junctionless Multi-Nanosheet FET N Kumar, KK Bhinge, S Kumar, S Das, A Gupta, P Singh 6th IEEE International Conference on Emerging Electronics (ICEE) 2022, 2022 | 1 | 2022 |
| Breakdown-Voltage Enhancing in LDMOS by Introducing Buffered Step Doping Technique N Kumar, A Gupta, P Singh 2022 First International Conference on Electrical, Electronics, Information …, 2022 | 1 | 2022 |
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