Donald  L. Dorsey
Donald L. Dorsey
Materials Research Engineer
Verified email at us.af.mil
Title
Cited by
Cited by
Year
Demonstration of high mobility and quantum transport in modulation-doped β-(AlxGa1-x)2O3/Ga2O3 heterostructures
Y Zhang, A Neal, Z Xia, C Joishi, JM Johnson, Y Zheng, S Bajaj, ...
Applied Physics Letters 112 (17), 173502, 2018
1972018
Thermometry of AlGaN/GaN HEMTs using multispectral raman features
S Choi, ER Heller, D Dorsey, R Vetury, S Graham
IEEE Transactions on Electron Devices 60 (6), 1898-1904, 2013
782013
Analysis of the residual stress distribution in AlGaN/GaN high electron mobility transistors
S Choi, E Heller, D Dorsey, R Vetury, S Graham
Journal of Applied Physics 113 (9), 093510, 2013
712013
Flexible gallium nitride for high‐performance, strainable radio‐frequency devices
NR Glavin, KD Chabak, ER Heller, EA Moore, TA Prusnick, B Maruyama, ...
Advanced Materials 29 (47), 1701838, 2017
692017
The impact of bias conditions on self-heating in AlGaN/GaN HEMTs
S Choi, ER Heller, D Dorsey, R Vetury, S Graham
IEEE transactions on electron devices 60 (1), 159-162, 2012
622012
Electrical and structural dependence of operating temperature of AlGaN/GaN HEMTs
E Heller, S Choi, D Dorsey, R Vetury, S Graham
Microelectronics Reliability 53 (6), 872-877, 2013
612013
Prediction of giant values from a calculation of excitonic nonlinear optical properties in rectangular GaAs quantum-well wires
FL Madarasz, F Szmulowicz, FK Hopkins, DL Dorsey
Physical Review B 49 (19), 13528, 1994
601994
The impact of mechanical stress on the degradation of AlGaN/GaN high electron mobility transistors
S Choi, E Heller, D Dorsey, R Vetury, S Graham
Journal of Applied Physics 114 (16), 164501, 2013
582013
Ab initio calculation of binding and diffusion of a Ga adatom on the surface
JG LePage, M Alouani, DL Dorsey, JW Wilkins, PE Blöchl
Physical Review B 58 (3), 1499, 1998
481998
Lateral β-Ga2O3 field effect transistors
KD Chabak, KD Leedy, AJ Green, S Mou, AT Neal, T Asel, ER Heller, ...
Semiconductor Science and Technology 35 (1), 013002, 2019
312019
Transient stress characterization of AlGaN/GaN HEMTs due to electrical and thermal effects
JP Jones, E Heller, D Dorsey, S Graham
Microelectronics Reliability 55 (12), 2634-2639, 2015
292015
Fast transient thermoreflectance CCD imaging of pulsed self heating in AlGaN/GaN power transistors
K Maize, E Heller, D Dorsey, A Shakouri
2013 IEEE International Reliability Physics Symposium (IRPS), CD. 2.1-CD. 2.3, 2013
282013
Heuristic rules for group IV dopant site selection in III–V compounds
R Venkatasubramanian, DL Dorsey, K Mahalingam
Journal of crystal growth 175, 224-228, 1997
261997
Compositional analysis of mixed–cation‐anion III–V semiconductor interfaces using phase retrieval high‐resolution transmission electron microscopy
K Mahalingam, KG Eyink, GJ Brown, DL Dorsey, CF Kisielowski, A Thust
Journal of microscopy 230 (3), 372-381, 2008
232008
Thermoreflectance CCD imaging of self heating in AlGaN/GaN high electron mobility power transistors at high drain voltage
K Maize, E Heller, D Dorsey, A Shakouri
2012 28th Annual IEEE Semiconductor Thermal Measurement and Management …, 2012
172012
Quantifying stoichiometry of mixed-cation-anion III-V semiconductor interfaces at atomic resolution
K Mahalingam, KG Eyink, GJ Brown, DL Dorsey, CF Kisielowski, A Thust
Applied physics letters 88 (9), 091904, 2006
172006
Molecular‐beam epitaxial growth surface roughening kinetics of Ge (001): A theoretical study
R Venkatasubramanian, DL Dorsey
Journal of Vacuum Science & Technology B: Microelectronics and Nanometer …, 1993
151993
Ir4+ ions in β-Ga2O3 crystals: An unintentional deep donor
CA Lenyk, NC Giles, EM Scherrer, BE Kananen, LE Halliburton, ...
Journal of Applied Physics 125 (4), 045703, 2019
142019
Calculation of giant third‐order nonlinear susceptibilities due to excitonic processes in rectangular GaAs quantum well wires
FL Madarasz, F Szmulowicz, FK Hopkins, DL Dorsey
Journal of applied physics 75 (1), 639-641, 1994
141994
Influence of physisorbed arsenic on RHEED intensity oscillations during low-temperature GaAs molecular beam epitaxy
R Venkatasubramanian, VK Pamula, DL Dorsey
Applied surface science 104, 448-454, 1996
131996
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Articles 1–20