| A multilevel FeFET memory device based on laminated HSO and HZO ferroelectric layers for high-density storage T Ali, P Polakowski, K Kühnel, M Czernohorsky, T Kämpfe, M Rudolph, ... 2019 IEEE International Electron Devices Meeting (IEDM), 28.7. 1-28.7. 4, 2019 | 104 | 2019 |
| Local crystallographic phase detection and texture mapping in ferroelectric Zr doped HfO2 films by transmission-EBSD M Lederer, T Kämpfe, R Olivo, D Lehninger, C Mart, S Kirbach, T Ali, ... Applied Physics Letters 115 (22), 2019 | 102 | 2019 |
| Back‐end‐of‐line compatible low‐temperature furnace anneal for ferroelectric hafnium zirconium oxide formation D Lehninger, R Olivo, T Ali, M Lederer, T Kämpfe, C Mart, K Biedermann, ... physica status solidi (a) 217 (8), 1900840, 2020 | 97 | 2020 |
| On the Origin of Wake‐Up and Antiferroelectric‐Like Behavior in Ferroelectric Hafnium Oxide M Lederer, R Olivo, D Lehninger, S Abdulazhanov, T Kämpfe, S Kirbach, ... physica status solidi (RRL)–Rapid Research Letters 15 (5), 2100086, 2021 | 73 | 2021 |
| A Review on Ge Nanocrystals Embedded in SiO2 and High‐k Dielectrics D Lehninger, J Beyer, J Heitmann physica status solidi (a) 215 (7), 1701028, 2018 | 59 | 2018 |
| Comparison of static and dynamic 18F-FDG PET/CT for quantification of pulmonary inflammation in acute lung injury A Braune, F Hofheinz, T Bluth, T Kiss, J Wittenstein, M Scharffenberg, ... Journal of Nuclear Medicine 60 (11), 1629-1634, 2019 | 57* | 2019 |
| A fully integrated ferroelectric thin‐film‐transistor–influence of device scaling on threshold voltage compensation in displays D Lehninger, M Ellinger, T Ali, S Li, K Mertens, M Lederer, R Olivio, ... Advanced Electronic Materials 7 (6), 2100082, 2021 | 35 | 2021 |
| A Study on the Temperature-Dependent Operation of Fluorite-Structure-Based Ferroelectric HfO2 Memory FeFET: Pyroelectricity and Reliability T Ali, K Kühnel, M Czernohorsky, C Mart, M Rudolph, B Pätzold, ... IEEE Transactions on Electron Devices 67 (7), 2981-2987, 2020 | 34* | 2020 |
| Influence of annealing temperature on the structural and electrical properties of Si-doped ferroelectric hafnium oxide M Lederer, P Bagul, D Lehninger, K Mertens, A Reck, R Olivo, T Kampfe, ... ACS Applied Electronic Materials 3 (9), 4115-4120, 2021 | 32 | 2021 |
| Fluorite‐Structured Ferroelectric and Antiferroelectric Materials: A Gateway of Miniaturized Electronic Devices F Ali, T Ali, D Lehninger, A Sünbül, A Viegas, R Sachdeva, A Abbas, ... Advanced Functional Materials 32 (27), 2201737, 2022 | 31 | 2022 |
| Electric field-induced crystallization of ferroelectric hafnium zirconium oxide M Lederer, S Abdulazhanov, R Olivo, D Lehninger, T Kämpfe, K Seidel, ... Scientific reports 11 (1), 22266, 2021 | 27 | 2021 |
| Charge trapping of Ge-nanocrystals embedded in TaZrOx dielectric films D Lehninger, P Seidel, M Geyer, F Schneider, V Klemm, D Rafaja, ... Applied Physics Letters 106 (2), 2015 | 26 | 2015 |
| Ge nanostructures embedded in ZrO2 dielectric films for nonvolatile memory applications D Lehninger, L Khomenkova, C Röder, G Gärtner, B Abendroth, J Beyer, ... ECS Transactions 66 (4), 203, 2015 | 24 | 2015 |
| Optimizing ferroelectric and interface layers in HZO-based FTJs for neuromorphic applications A Sünbül, T Ali, K Mertens, R Revello, D Lehninger, F Müller, M Lederer, ... IEEE Transactions on Electron Devices 69 (2), 808-815, 2021 | 23 | 2021 |
| Review on the microstructure of ferroelectric hafnium oxides M Lederer, D Lehninger, T Ali, T Kämpfe physica status solidi (RRL)–Rapid Research Letters 16 (10), 2200168, 2022 | 19 | 2022 |
| Substrate-dependent differences in ferroelectric behavior and phase diagram of Si-doped hafnium oxide M Lederer, K Mertens, R Olivo, K Kühnel, D Lehninger, T Ali, T Kämpfe, ... Journal of Materials Research 36, 4370-4378, 2021 | 18 | 2021 |
| A FeFET with a novel MFMFIS gate stack: towards energy-efficient and ultrafast NVMs for neuromorphic computing T Ali, K Mertens, K Kühnel, M Rudolph, S Oehler, D Lehninger, F Müller, ... Nanotechnology 32 (42), 425201, 2021 | 18 | 2021 |
| Effect of Ge Content on the Formation of Ge Nanoclusters in Magnetron-Sputtered GeZrOx-Based Structures L Khomenkova, D Lehninger, O Kondratenko, S Ponomaryov, ... Nanoscale research letters 12, 1-12, 2017 | 17 | 2017 |
| Memory Array Demonstration of fully integrated 1T-1C FeFET concept with separated ferroelectric MFM device in interconnect layer K Seidel, D Lehninger, R Hoffmann, T Ali, M Lederer, R Revello, ... 2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and …, 2022 | 16 | 2022 |
| Energy harvesting in the back-end of line with CMOS compatible ferroelectric hafnium oxide C Mart, S Abdulazhanov, M Czernohorsky, T Kämpfe, D Lehninger, ... 2020 IEEE International Electron Devices Meeting (IEDM), 26.3. 1-26.3. 4, 2020 | 16 | 2020 |
Thomas KämpfeFraunhofer IPMS - Center Nanoelectronic TechnologiesVerified email at ipms.fraunhofer.de
