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Terrance O'Regan
Terrance O'Regan
Electrical Engineer, DEVCOM Army Research Laboratory
Verified email at mail.mil
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Year
Electrical performance of monolayer MoS2 field-effect transistors prepared by chemical vapor deposition
M Amani, ML Chin, AG Birdwell, TP O’Regan, S Najmaei, Z Liu, ...
Applied Physics Letters 102 (19), 2013
2712013
Temperature-dependent phonon shifts in monolayer MoS2
NA Lanzillo, A Glen Birdwell, M Amani, FJ Crowne, PB Shah, S Najmaei, ...
Applied Physics Letters 103 (9), 2013
2612013
Vertical 2D/3D semiconductor heterostructures based on epitaxial molybdenum disulfide and gallium nitride
D Ruzmetov, K Zhang, G Stan, B Kalanyan, GR Bhimanapati, SM Eichfeld, ...
Acs Nano 10 (3), 3580-3588, 2016
2462016
Electrical transport properties of polycrystalline monolayer molybdenum disulfide
S Najmaei, M Amani, ML Chin, Z Liu, AG Birdwell, TP O’Regan, ...
ACS nano 8 (8), 7930-7937, 2014
1462014
Theoretical study of some physical aspects of electronic transport in nMOSFETs at the 10-nm gate-length
MV Fischetti, TP O'Regan, S Narayanan, C Sachs, S Jin, J Kim, Y Zhang
IEEE Transactions on Electron Devices 54 (9), 2116-2136, 2007
1432007
Theoretical study on strain-induced variations in electronic properties of monolayer MoS2
L Dong, RR Namburu, TP O’Regan, M Dubey, AM Dongare
Journal of Materials Science 49, 6762-6771, 2014
782014
A combined capacitance-voltage and hard x-ray photoelectron spectroscopy characterisation of metal/Al2O3/In0. 53Ga0. 47As capacitor structures
J Lin, L Walsh, G Hughes, JC Woicik, IM Povey, TP O'Regan, PK Hurley
Journal of Applied Physics 116 (2), 2014
512014
Blueshift of the A-exciton peak in folded monolayer 1 H-MoS 2
FJ Crowne, M Amani, AG Birdwell, ML Chin, TP O’Regan, S Najmaei, ...
Physical Review B 88 (23), 235302, 2013
482013
Theoretical study on strain induced variations in electronic properties of 2H-MoS2 bilayer sheets
L Dong, AM Dongare, RR Namburu, TP O'Regan, M Dubey
Applied Physics Letters 104 (5), 2014
472014
Analysis of temperature dependent hysteresis in MoS2 field effect transistors for high frequency applications
PB Shah, M Amani, ML Chin, TP O’regan, FJ Crowne, M Dubey
Solid-state electronics 91, 87-90, 2014
432014
Planar metal–insulator–metal diodes based on the Nb/Nb2O5/X material system
ML Chin, P Periasamy, TP O'Regan, M Amani, C Tan, RP O'Hayre, ...
Journal of Vacuum Science & Technology B 31 (5), 2013
412013
Calculation of the electron mobility in III-V inversion layers with high-κ dielectrics
TP O’Regan, MV Fischetti, B Sorée, S Jin, W Magnus, M Meuris
Journal of Applied Physics 108 (10), 2010
402010
Structural and electrical analysis of epitaxial 2D/3D vertical heterojunctions of monolayer MoS2 on GaN
TP O'Regan, D Ruzmetov, MR Neupane, RA Burke, AA Herzing, K Zhang, ...
Applied Physics Letters 111 (5), 2017
372017
Modeling the capacitance-voltage response of In 0.53 Ga 0.47 As metal-oxide-semiconductor structures: Charge quantization and nonparabolic corrections
TP O’Regan, PK Hurley, B Sorée, MV Fischetti
Applied Physics Letters 96 (21), 2010
352010
Diffusion of In0. 53Ga0. 47As elements through hafnium oxide during post deposition annealing
W Cabrera, B Brennan, H Dong, TP O'Regan, IM Povey, S Monaghan, ...
Applied Physics Letters 104 (1), 2014
312014
Electrically active interface defects in the In0. 53Ga0. 47As MOS system
V Djara, TP O’Regan, K Cherkaoui, M Schmidt, S Monaghan, É O’Connor, ...
Microelectronic engineering 109, 182-188, 2013
292013
Edge effects on band gap energy in bilayer 2H-MoS2 under uniaxial strain
L Dong, J Wang, R Namburu, TP O'Regan, M Dubey, AM Dongare
Journal of Applied Physics 117 (24), 2015
252015
Van der Waals interfaces in epitaxial vertical metal/2D/3D semiconductor heterojunctions of monolayer MoS2 and GaN
D Ruzmetov, MR Neupane, A Herzing, TP O’Regan, A Mazzoni, ML Chin, ...
2D Materials 5 (4), 045016, 2018
222018
Theory of hole mobility in strained Ge and III-V p-channel inversion layers with high-κ insulators
Y Zhang, MV Fischetti, B Sorée, T O’Regan
Journal of Applied Physics 108 (12), 2010
222010
Calculation of the capacitance-voltage characteristic of GaAs, In0. 53Ga0. 47As, and InAs metal-oxide-semiconductor structures
TP O’Regan, PK Hurley
Applied Physics Letters 99 (16), 2011
212011
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