Feng Liu
Title
Cited by
Cited by
Year
Vertically stacked silicon nanowire transistors fabricated by inductive plasma etching and stress-limited oxidation
RMY Ng, T Wang, F Liu, X Zuo, J He, M Chan
Electron Device Letters, IEEE 30 (5), 520-522, 2009
1122009
Dynamically managed data for CPU-GPU architectures
TB Jablin, JA Jablin, P Prabhu, F Liu, DI August
Proceedings of the Tenth International Symposium on Code Generation and …, 2012
1102012
A survey of the practice of computational science
P Prabhu, TB Jablin, A Raman, Y Zhang, J Huang, H Kim, NP Johnson, ...
State of the Practice Reports, 19, 2011
1062011
A charge-based model for long-channel cylindrical surrounding-gate MOSFETs from intrinsic channel to heavily doped body
F Liu, J He, L Zhang, J Zhang, J Hu, C Ma, M Chan
Electron Devices, IEEE Transactions on 55 (8), 2187-2194, 2008
902008
Dynamic synthesis for relaxed memory models
F Liu, N Nedev, N Prisadnikov, M Vechev, E Yahav
Proceedings of the 33rd ACM SIGPLAN conference on Programming Language …, 2012
842012
Generic Carrier-Based Core Model for Four-Terminal Double-Gate MOSFET Valid for Symmetric, Asymmetric, SOI, and Independent Gate Operation Modes
F Liu, J He, Y Fu, J Hu, W Bian, Y Song, X Zhang, M Chan
IEEE transactions on electron devices, 271-276, 2008
45*2008
A non-charge-sheet analytic model for symmetric double-gate MOSFETs with smooth transition between partially and fully depleted operation modes
F Liu, J He, J Zhang, Y Chen, M Chan
Electron Devices, IEEE Transactions on 55 (12), 3494-3502, 2008
442008
A carrier-based approach for compact modeling of the long-channel undoped symmetric double-gate MOSFETs
J He, F Liu, J Zhang, J Feng, J Hu, S Yang, M Chan
Electron Devices, IEEE Transactions on 54 (5), 1203-1209, 2007
442007
Scalable speculative parallelization on commodity clusters
H Kim, A Raman, F Liu, JW Lee, DI August
Proceedings of the 2010 43rd Annual IEEE/ACM International Symposium on …, 2010
432010
Cgpa: coarse-grained pipelined accelerators
F Liu, S Ghosh, NP Johnson, DI August
Design Automation Conference (DAC), 2014 51st ACM/EDAC/IEEE, 1-6, 2014
322014
A compact model of silicon-based nanowire MOSFETs for circuit simulation and design
J Yang, J He, F Liu, L Zhang, F Liu, X Zhang, M Chan
Electron Devices, IEEE Transactions on 55 (11), 2898-2906, 2008
312008
An approximate carrier-based compact model for fully depleted surrounding-gate MOSFETs with a finite doping body
J He, F Liu, W Bian, J Feng, J Zhang, X Zhang
Semiconductor science and technology 22 (6), 671, 2007
302007
DynaSpAM: Dynamic spatial architecture mapping using Out of Order instruction schedules
F Liu, H Ahn, SR Beard, T Oh, DI August
Computer Architecture (ISCA), 2015 ACM/IEEE 42nd Annual International …, 2015
262015
A charge-based compact model for predicting the current–voltage and capacitance–voltage characteristics of heavily doped cylindrical surrounding-gate MOSFETs
F Liu, J Zhang, F He, F Liu, L Zhang, M Chan
Solid-State Electronics 53 (1), 49-53, 2009
252009
Effects of body doping on threshold voltage and channel potential of symmetric DG MOSFETs with continuous solution from accumulation to strong-inversion regions
F Liu, L Zhang, J Zhang, J He, M Chan
Semiconductor Science and Technology 24, 085005, 2009
212009
An Analytic Model for Nanowire MOSFETs With Ge/Si Core/Shell Structure
L Zhang, J He, J Zhang, F Liu, Y Fu, Y Song, X Zhang
Electron Devices, IEEE Transactions on 55 (11), 2907-2917, 2008
162008
Parallel assertions for debugging parallel programs
D Schwartz-Narbonne, F Liu, T Pondicherry, D August, S Malik
Formal Methods and Models for Codesign (MEMOCODE), 2011 9th IEEE/ACM …, 2011
132011
A unified charge-based model for symmetric DG MOSFETs valid for both heavily doped body and undoped channel
L Zhang, J He, F Liu, J Zhang, Y Song
Mixed Design of Integrated Circuits and Systems, 2008. MIXDES 2008. 15th …, 2008
112008
GPU Accelerated Array Queries: The Good, the Bad, and the Promising
F Liu, K Lee, I Roy, V Talwar, S Chen, J Chang, P Ranganathan
82014
A Surface-Potential-Based Non-Charge-Sheet Core Model for SOI MOSFETs Valid to PD and FD Operation Modes
J Zhang, J He, F Liu, C Ma, J Feng, M Chan
The 5th International Workshop on Compact Modeling (IWCM'08), Seoul, South Korea, 2008
62008
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