Operation and high-frequency performance of nanoscale unipolar rectifying diodes J Mateos, BG Vasallo, D Pardo, T González Applied Physics Letters 86 (21), 2005 | 109 | 2005 |
Ballistic nanodevices for terahertz data processing: Monte Carlo simulations J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, Y Roelens, ... Nanotechnology 14 (2), 117, 2003 | 108 | 2003 |
Microscopic modeling of nonlinear transport in ballistic nanodevices J Mateos, BG Vasallo, D Pardo, T González, JS Galloo, S Bollaert, ... IEEE Transactions on Electron Devices 50 (9), 1897-1905, 2003 | 106 | 2003 |
Comparison between the dynamic performance of double-and single-gate AlInAs/InGaAs HEMTs BG Vasallo, N Wichmann, S Bollaert, Y Roelens, A Cappy, T González, ... IEEE Transactions on Electron Devices 54 (11), 2815-2822, 2007 | 88 | 2007 |
Nonlinear effects in T-branch junctions J Mateos, BG Vasallo, D Pardo, T González, E Pichonat, JS Galloo, ... IEEE Electron Device Letters 25 (5), 235-237, 2004 | 66 | 2004 |
THz operation of self-switching nano-diodes and nano-transistors J Mateos, AM Song, BG Vasallo, D Pardo, T González Nanotechnology II 5838, 145-153, 2005 | 36 | 2005 |
Comparison between the noise performance of double-and single-gate InP-based HEMTs BG Vasallo, N Wichmann, S Bollaert, Y Roelens, A Cappy, T González, ... IEEE transactions on electron devices 55 (6), 1535-1540, 2008 | 35 | 2008 |
Monte Carlo study of kink effect in short-channel InAlAs/InGaAs high electron mobility transistors BG Vasallo, J Mateos, D Pardo, T González Journal of applied physics 94 (6), 4096-4101, 2003 | 31 | 2003 |
Kink-effect related noise in short-channel InAlAs/InGaAs high electron mobility transistors BG Vasallo, J Mateos, D Pardo, T González Journal of Applied Physics 95 (12), 8271-8274, 2004 | 27 | 2004 |
Room temperature nonlinear transport in ballistic nanodevices T González, BG Vasallo, D Pardo, J Mateos Semiconductor science and technology 19 (4), S125, 2004 | 24 | 2004 |
Monte Carlo study of kink effect in isolated-gate InAs/AlSb high electron mobility transistors BG Vasallo, H Rodilla, T González, G Moschetti, J Grahn, J Mateos Journal of Applied Physics 108 (9), 2010 | 23 | 2010 |
Ballistic nano-devices for high frequency applications S Bollaert, A Cappy, Y Roelens, JS Galloo, C Gardes, Z Teukam, ... Thin Solid Films 515 (10), 4321-4326, 2007 | 21 | 2007 |
Monte Carlo analysis of four-terminal ballistic rectifiers BG Vasallo, T González, D Pardo, J Mateos Nanotechnology 15 (4), S250, 2004 | 21 | 2004 |
Monte Carlo study of 2-D capacitance fringing effects in GaAs planar Schottky diodes D Moro-Melgar, A Maestrini, J Treuttel, L Gatilova, T González, ... IEEE Transactions on Electron Devices 63 (10), 3900-3907, 2016 | 20 | 2016 |
Experiences on the design, creation, and analysis of multimedia content to promote active learning R Rengel, E Pascual, I Íñiguez-de-la-Torre, MJ Martín, BG Vasallo Journal of Science Education and Technology 28, 445-451, 2019 | 19 | 2019 |
Monte Carlo modelling of noise in advanced III–V HEMTs J Mateos, H Rodilla, BG Vasallo, T González Journal of Computational Electronics 14 (1), 72-86, 2015 | 16 | 2015 |
Monte Carlo simulation of noise in electronic devices: limitations and perspectives T Gonzalez, J Mateos, MJ Martín‐Martínez, S Perez, R Rengel, ... AIP Conference Proceedings 665 (1), 496-503, 2003 | 16 | 2003 |
Supervised coursework as a way of improving motivation in the learning of digital electronics R Rengel, MJ Martin, BG Vasallo IEEE Transactions on Education 55 (4), 525-528, 2012 | 15 | 2012 |
Kink effect and noise performance in isolated-gate InAs/AlSb high electron mobility transistors BG Vasallo, H Rodilla, T González, G Moschetti, J Grahn, J Mateos Semiconductor Science and Technology 27 (6), 065018, 2012 | 12 | 2012 |
Analysis of surface charge effects and edge fringing capacitance in planar GaAs and GaN Schottky barrier diodes B Orfao, BG Vasallo, D Moro-Melgar, S Perez, J Mateos, T Gonzalez IEEE Transactions on Electron Devices 67 (9), 3530-3535, 2020 | 10 | 2020 |