| Sustainable production of highly conductive multilayer graphene ink for wireless connectivity and IoT applications K Pan, Y Fan, T Leng, J Li, Z Xin, J Zhang, L Hao, J Gallop, KS Novoselov, ... Nature communications 9 (1), 5197, 2018 | 282 | 2018 |
| Flexible indium-gallium-zinc-oxide Schottky diode operating beyond 2.45 [thinsp] GHz J Zhang, Y Li, B Zhang, H Wang, Q Xin, A Song Nature communications 6, 2015 | 193 | 2015 |
| THz Detection and Imaging using Graphene Ballistic Rectifiers GH Auton, D But, jiawei Zhang, EW Hill, D Coquillat, C Consejo, P Nouvel, ... Nano Letters, 2017 | 117 | 2017 |
| Graphene ballistic nano-rectifier with very high responsivity G Auton, J Zhang, RK Kumar, H Wang, X Zhang, Q Wang, E Hill, A Song Nature communications 7, 2016 | 100 | 2016 |
| One-Volt IGZO Thin-Film Transistors With Ultra-Thin, Solution-Processed AlxOy Gate Dielectric W Cai, S Park, J Zhang, J Wilson, Y Li, Q Xin, L Majewski, A Song IEEE Electron Device Letters 39 (3), 375-378, 2018 | 68 | 2018 |
| Extremely high-gain source-gated transistors J Zhang, J Wilson, G Auton, Y Wang, M Xu, Q Xin, A Song Proceedings of the National Academy of Sciences, 201820756, 2019 | 65 | 2019 |
| Complementary integrated circuits based on p-type SnO and n-type IGZO thin-film transistors Y Li, J Yang, Y Wang, P Ma, Y Yuan, J Zhang, Z Lin, L Zhou, Q Xin, ... IEEE Electron Device Letters 39 (2), 208-211, 2018 | 54 | 2018 |
| A sputtered silicon oxide electrolyte for high-performance thin-film transistors X Ma, J Zhang, W Cai, H Wang, J Wilson, Q Wang, Q Xin, A Song Scientific Reports 7, 2017 | 51 | 2017 |
| Significant performance enhancement of very thin InGaZnO thin-film transistors by a self-assembled monolayer treatment W Cai, J Wilson, J Zhang, J Brownless, X Zhang, LA Majewski, A Song ACS Applied Electronic Materials 2 (1), 301-308, 2020 | 48 | 2020 |
| Amorphous-InGaZnO Thin-Film Transistors Operating Beyond 1 GHz Achieved by Optimizing the Channel and Gate Dimensions Y Wang, J Yang, H Wang, J Zhang, H Li, G Zhu, Y Shi, Y Li, Q Wang, ... IEEE Transactions on Electron Devices 65 (4), 1377-1382, 2018 | 47 | 2018 |
| Room Temperature Processed Ultrahigh-Frequency Indium-Gallium–Zinc-Oxide Schottky Diode J Zhang, H Wang, J Wilson, X Ma, J Jin, A Song IEEE Electron Device Letters 37 (4), 389-392, 2016 | 44 | 2016 |
| High Performance Complementary Circuits Based on p-SnO and n-IGZO Thin-Film Transistors J Zhang, J Yang, Y Li, J Wilson, X Ma, Q Xin, A Song Materials 10 (3), 319, 2017 | 43 | 2017 |
| Controlled reduction of graphene oxide laminate and its applications for ultra-wideband microwave absorption K Pan, T Leng, J Song, C Ji, J Zhang, J Li, KS Novoselov, Z Hu Carbon 160, 307-316, 2020 | 41 | 2020 |
| Effects of substrate and anode metal annealing on InGaZnO Schottky diodes L Du, H Li, L Yan, J Zhang, Q Xin, Q Wang, A Song Applied Physics Letters 110 (1), 011602, 2017 | 38 | 2017 |
| Complementary Integrated Circuits Based on n-Type and p-Type Oxide Semiconductors for Applications Beyond Flat-Panel Displays Y Li, J Zhang, J Yang, Y Yuan, Z Hu, Z Lin, A Song, Q Xin IEEE Transactions on Electron Devices 66 (2), 950-956, 2019 | 33 | 2019 |
| Analysis of carrier transport and band tail states in p-type tin monoxide thin-film transistors by temperature dependent characteristics J Zhang, X Kong, J Yang, Y Li, J Wilson, J Liu, Q Xin, Q Wang, A Song Applied Physics Letters 108 (26), 263503, 2016 | 32 | 2016 |
| Organic and inorganic passivation of p-type SnO thin-film transistors with different active layer thicknesses Y Qu, J Yang, Y Li, J Zhang, Q Wang, A Song, Q Xin Semiconductor Science and Technology 33 (7), 075001, 2018 | 31 | 2018 |
| Improving photoelectrochemical performance of highly-ordered TiO2 nanotube arrays with cosensitization of PbS and CdS quantum dots X Zhang, M Zeng, J Zhang, A Song, S Lin RSC Adv. 6 (10), 8118-8126, 2016 | 30 | 2016 |
| Oxide-Based Electric-Double-Layer Thin-Film Transistors on a Flexible Substrate W Cai, J Zhang, J Wilson, X Ma, H Wang, X Zhang, Q Xin, A Song IEEE Electron Device Letters, 2017 | 29 | 2017 |
| Low-Voltage, Flexible InGaZnO Thin-Film Transistors Gated With Solution-Processed, Ultra-Thin AlxOy W Cai, J Wilson, J Zhang, S Park, L Majewski, A Song IEEE Electron Device Letters 40 (1), 36-39, 2018 | 28 | 2018 |
Jidong JinHanyang UniversityAdresse e-mail validée de hanyang.ac.kr
