| Spacer Engineering Based High Performance Reconfigurable FET With Low OFF Current Characteristics A Bhattacharjee, M Saikiran, A Dutta, A Bulusu, S Dasgupta IEEE Electron Device Letters 36 (5), 520-522, 2015 | 32 | 2015 |
| Impact of gate/spacer-channel underlap, gate oxide EOT, and scaling on the device characteristics of a DG-RFET A Bhattacharjee, S Dasgupta IEEE Transactions on Electron Devices 64 (8), 3063-3070, 2017 | 27 | 2017 |
| A first insight to the thermal dependence of the DC, analog and RF performance of an S/D spacer engineered DG-ambipolar FET A Bhattacharjee, M Saikiran, S Dasgupta IEEE Transactions on Electron Devices 64 (10), 4327-4334, 2017 | 18 | 2017 |
| Study on temperature dependence scattering mechanisms and mobility effects in GaN and GaAs HEMTs D Pandey, A Bhattacharjee, TR Lenka Physics of Semiconductor Devices: 17th International Workshop on the Physics …, 2014 | 15 | 2014 |
| Performance evaluation of a novel GAA Schottky junction (GAASJ) TFET with heavily doped pocket N Bagga, A Kumar, A Bhattacharjee, S Dasgupta Superlattices and Microstructures 109, 545-552, 2017 | 12 | 2017 |
| Optimization of Design Parameters in Dual- Spacer-Based Nanoscale Reconfigurable FET for Improved Performance A Bhattacharjee, S Dasgupta IEEE Transactions on Electron Devices 63 (3), 1375-1382, 2016 | 11 | 2016 |
| A compact physics-based surface potential and drain current model for an S/D spacer-based DG-RFET A Bhattacharjee, S Dasgupta IEEE Transactions on Electron Devices 65 (2), 448-455, 2018 | 10 | 2018 |
| Performance analysis of 20 nm gate-length In0: 2Al0: 8N/GaN HEMT with Cu-gate having a remarkable high ION/IOFF ratio A Bhattacharjee, TR Lenka Journal of Semiconductors 35 (6), 2014 | 2 | 2014 |
| Insight to the 2DEG transport and mobility effects of a 20nm recessed gate InAlN/AlN/GaN HEMT A Bhattacharjee, TR Lenka 2014 International Conference on Electronics and Communication Systems …, 2014 | 1 | 2014 |
| FinFET Advancements and Challenges: A State-of-the-Art Review R Ghosh, T Majumder, A Bhattacharjee, R Debbarma Nanoelectronics Devices: Design, Materials, and Applications (Part I), 208, 2023 | | 2023 |
| Photoelectrochemical Behavior of ZnO Nanostructure: A Short Review T Majumder, A Bhattacharjee World Scientific Annual Review of Functional Materials 1, 2330002, 2023 | | 2023 |
| A Low Power Adiabatic Approach for Scaled VLSI Circuits S Bhowmik, T Majumder, A Bhattacharjee Journal of VLSI circuits and systems 5 (02), 72-77, 2023 | | 2023 |
| AN S/D SPACER ENGINEERED DG-AMBIPOLAR FET DEVICE FOR INVESTIGATING THE THERMAL DEPENDENCE OF THE DC, ANALOG AND RF PERFORMANCE A Bhattacharjee, M Saikiran, S Dasgupta AU Patent 2,021,107,091, 2021 | | 2021 |
| Design and Optimization of a 50 nm Dual Material Dual Gate (DMDG), High-к Spacer, FiNFET Having Variable Gate Metal Workfunction A Bhattacharjee, T Majumder, R Laskar, S Kar, T Laskar, N Dey, ... Microelectronic Devices, Circuits and Systems: Second International …, 2021 | | 2021 |
| Source/Drain (S/D) Spacer-Based Reconfigurable Devices-Advantages in High-Temperature Applications and Digital Logic A Bhattacharjee, S Dasgupta Modelling, Simulation and Intelligent Computing: Proceedings of MoSICom 2020 …, 2020 | | 2020 |
| RF and microwave characteristics of a 20nm gate length InAlN/GaN-based HEMT having a high “Figure of Merit” A Bhattacharjee, TR Lenka 2014 2nd International Conference on Devices, Circuits and Systems (ICDCS), 1-4, 2014 | | 2014 |
Sudeb DasguptaDepartment of Electronics and Communication Engineering, IIT RoorkeeVerified email at iitr.ac.in
