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Mathieu Luisier
Mathieu Luisier
ETH Zurich
Bestätigte E-Mail-Adresse bei iis.ee.ethz.ch
Titel
Zitiert von
Zitiert von
Jahr
Sub-10 nm carbon nanotube transistor
AD Franklin, M Luisier, SJ Han, G Tulevski, CM Breslin, L Gignac, ...
Nano letters 12 (2), 758-762, 2012
11572012
Atomistic simulation of nanowires in the tight-binding formalism: From boundary conditions to strain calculations
M Luisier, A Schenk, W Fichtner, G Klimeck
Physical Review B—Condensed Matter and Materials Physics 74 (20), 205323, 2006
5142006
The performance limits of hexagonal boron nitride as an insulator for scaled CMOS devices based on two-dimensional materials
T Knobloch, YY Illarionov, F Ducry, C Schleich, S Wachter, K Watanabe, ...
Nature Electronics 4 (2), 98-108, 2021
2992021
Atomistic full-band simulations of silicon nanowire transistors: Effects of electron-phonon scattering
M Luisier, G Klimeck
Physical Review B—Condensed Matter and Materials Physics 80 (15), 155430, 2009
2872009
On Landauer versus Boltzmann and full band versus effective mass evaluation of thermoelectric transport coefficients
C Jeong, R Kim, M Luisier, S Datta, M Lundstrom
Journal of Applied Physics 107 (2), 2010
2282010
Simulation of nanowire tunneling transistors: From the Wentzel–Kramers–Brillouin approximation to full-band phonon-assisted tunneling
M Luisier, G Klimeck
Journal of Applied Physics 107 (8), 2010
2272010
Atomistic full-band design study of InAs band-to-band tunneling field-effect transistors
M Luisier, G Klimeck
IEEE Electron Device Letters 30 (6), 602-604, 2009
1992009
Fast methods for computing selected elements of the Green’s function in massively parallel nanoelectronic device simulations
A Kuzmin, M Luisier, O Schenk
Euro-Par 2013 Parallel Processing: 19th International Conference, Aachen …, 2013
1932013
Quantum transport in two-and three-dimensional nanoscale transistors: Coupled mode effects in the nonequilibrium Green’s function formalism
M Luisier, A Schenk, W Fichtner
Journal of Applied physics 100 (4), 2006
1802006
Soft surfaces of nanomaterials enable strong phonon interactions
D Bozyigit, N Yazdani, M Yarema, O Yarema, WMM Lin, S Volk, ...
Nature 531, 618-622, 2016
1792016
Atomic Scale Plasmonic Switch
A Emboras, J Niegemann, P Ma, C Haffner, A Pedersen, M Luisier, ...
Nano letters 16, 709-714, 2016
1682016
Performance comparisons of tunneling field-effect transistors made of InSb, carbon, and GaSb-InAs broken gap heterostructures
M Luisier, G Klimeck
2009 IEEE International Electron Devices Meeting (IEDM), 1-4, 2009
1302009
Ab initio simulation of single- and few-layer transistors: Effect of electron-phonon scattering
Á Szabó, R Rhyner, M Luisier
Physical Review B 92 (3), 035435, 2015
1182015
One-dimensional edge contacts to a monolayer semiconductor
A Jain, Á Szabó, M Parzefall, E Bonvin, T Taniguchi, K Watanabe, ...
Nano letters 19 (10), 6914-6923, 2019
1122019
Back-end, CMOS-compatible ferroelectric field-effect transistor for synaptic weights
M Halter, L Bégon-Lours, V Bragaglia, M Sousa, BJ Offrein, S Abel, ...
ACS applied materials & interfaces 12 (15), 17725-17732, 2020
1042020
Leakage-reduction design concepts for low-power vertical tunneling field-effect transistors
S Agarwal, G Klimeck, M Luisier
IEEE Electron Device Letters 31 (6), 621-623, 2010
1032010
Performance comparisons of III–V and strained-Si in planar FETs and nonplanar FinFETs at ultrashort gate length (12 nm)
SH Park, Y Liu, N Kharche, MS Jelodar, G Klimeck, MS Lundstrom, ...
IEEE Transactions on Electron Devices 59 (8), 2107-2114, 2012
1002012
Tuning electron–phonon interactions in nanocrystals through surface termination
N Yazdani, D Bozyigit, K Vuttivorakulchai, M Luisier, I Infante, V Wood
Nano letters 18 (4), 2233-2242, 2018
992018
Ab-initio simulation of van der Waals MoTe2-SnS2 heterojunction TFETs for low power electronics
A Szabo, S Koester, M Luisier
IEEE Electron Device Letters, 2015
992015
Performance analysis of statistical samples of graphene nanoribbon tunneling transistors with line edge roughness
M Luisier, G Klimeck
Applied Physics Letters 94 (22), 2009
992009
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