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Yoshishige Tsuchiya
Yoshishige Tsuchiya
Verified email at ecs.soton.ac.uk - Homepage
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Year
Electronic state of vortices in investigated by complex surface impedance measurements
Y Tsuchiya, K Iwaya, K Kinoshita, T Hanaguri, H Kitano, A Maeda, ...
Physical Review B 63 (18), 184517, 2001
902001
Charge injection and trapping in silicon nanocrystals
MA Rafiq, Y Tsuchiya, H Mizuta, S Oda, S Uno, ZAK Durrani, WI Milne
Applied Physics Letters 87 (18), 182101, 2005
822005
Hopping conduction in size-controlled Si nanocrystals
MA Rafiq, Y Tsuchiya, H Mizuta, S Oda, S Uno, ZAK Durrani, WI Milne
Journal of applied physics 100 (1), 014303, 2006
622006
Nanoelectromechanical nonvolatile memory device incorporating nanocrystalline Si dots
Y Tsuchiya, K Takai, N Momo, T Nagami, H Mizuta, S Oda, S Yamaguchi, ...
Journal of applied physics 100 (9), 094306, 2006
602006
Effects of Columnar Defects on the Josephson Plasma Resonance in
T Hanaguri, Y Tsuchiya, S Sakamoto, A Maeda, DG Steel
Physical review letters 78 (16), 3177, 1997
531997
Influence of nanocrystal size on the transport properties of Si nanocrystals
X Zhou, K Usami, MA Rafiq, Y Tsuchiya, H Mizuta, S Oda
Journal of Applied Physics 104 (2), 024518, 2008
312008
Reduction of the Superfluid Density in the Vortex-Liquid Phase of
T Hanaguri, T Tsuboi, Y Tsuchiya, K Sasaki, A Maeda
Physical review letters 82 (6), 1273, 1999
311999
Vapor–liquid–solid growth of small-and uniform-diameter silicon nanowires at low temperature from Si2H6
S Akhtar, K Usami, Y Tsuchiya, H Mizuta, S Oda
Applied physics express 1 (1), 014003, 2008
302008
Three-dimensional numerical analysis of switching properties of high-speed and nonvolatile nanoelectromechanical memory
T Nagami, H Mizuta, N Momo, Y Tsuchiya, S Saito, T Arai, T Shimada, ...
IEEE transactions on electron devices 54 (5), 1132-1139, 2007
272007
Effects of superconducting gap anisotropy on the flux flow resistivity in
K Takaki, A Koizumi, T Hanaguri, M Nohara, H Takagi, K Kitazawa, Y Kato, ...
Physical Review B 66 (18), 184511, 2002
272002
Fabrication and characterisation of suspended narrow silicon nanowire channels for low-power nano-electro-mechanical (NEM) switch applications
L Boodhoo, L Crudgington, HMH Chong, Y Tsuchiya, Z Moktadir, ...
Microelectronic Engineering 145, 66-70, 2015
252015
High-density assembly of nanocrystalline silicon quantum dots
A Tanaka, G Yamahata, Y Tsuchiya, K Usami, H Mizuta, S Oda
Current Applied Physics 6 (3), 344-347, 2006
252006
Random telegraph noise from resonant tunnelling at low temperatures
Z Li, M Sotto, F Liu, MK Husain, H Yoshimoto, Y Sasago, D Hisamoto, ...
Scientific reports 8 (1), 250, 2018
232018
Integration of tunnel-coupled double nanocrystalline silicon quantum dots with a multiple-gate single-electron transistor
Y Kawata, MAH Khalafalla, K Usami, Y Tsuchiya, H Mizuta, S Oda
Japanese Journal of Applied Physics 46 (7R), 4386, 2007
232007
Silicon-on-insulator-based radio frequency single-electron transistors operating at temperatures above 4.2 K
M Manoharan, Y Tsuchiya, S Oda, H Mizuta
Nano letters 8 (12), 4648-4652, 2008
222008
Formation mechanism of 100-nm-scale periodic structures in silicon using magnetic-field-assisted anodization
D Hippo, Y Nakamine, K Urakawa, Y Tsuchiya, H Mizuta, N Koshida, ...
Japanese journal of applied physics 47 (9R), 7398, 2008
212008
Control of electrostatic coupling observed for silicon double quantum dot structures
G Yamahata, Y Tsuchiya, S Oda, ZAK Durrani, H Mizuta
Japanese journal of applied physics 47 (6R), 4820, 2008
212008
Studies of Both Intralayer and Interlayer Electrodynamics of Bi2Sr2CaCu2O y in the Superconducting State
H Kitano, T Hanaguri, Y Tsuchiya, K Iwaya, R Abiru, A Maeda
Journal of Low Temperature Physics 117, 1241-1245, 1999
211999
Visible Electroluminescence from spherical-shaped silicon nanocrystals
HJ Cheong, A Tanaka, D Hippo, K Usami, Y Tsuchiya, H Mizuta, S Oda
Japanese journal of applied physics 47 (10R), 8137, 2008
192008
Scaling analysis of nanoelectromechanical memory devices
T Nagami, Y Tsuchiya, K Uchida, H Mizuta, S Oda
Japanese journal of applied physics 49 (4R), 044304, 2010
182010
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