| Bandgap Engineering of Strained Monolayer and Bilayer MoS2 HJ Conley, B Wang, JI Ziegler, RF Haglund Jr, ST Pantelides, KI Bolotin Nano letters 13 (8), 3626-3630, 2013 | 2510 | 2013 |
| Vertical and in-plane heterostructures from WS2/MoS2 monolayers Y Gong, J Lin, X Wang, G Shi, S Lei, Z Lin, X Zou, G Ye, R Vajtai, ... Nature materials 13 (12), 1135-1142, 2014 | 2330 | 2014 |
| Atom-by-atom structural and chemical analysis by annular dark-field electron microscopy OL Krivanek, MF Chisholm, V Nicolosi, TJ Pennycook, GJ Corbin, ... Nature 464 (7288), 571-574, 2010 | 1468 | 2010 |
| Defects Engineered Monolayer MoS2 for Improved Hydrogen Evolution Reaction G Ye, Y Gong, J Lin, B Li, Y He, ST Pantelides, W Zhou, R Vajtai, ... Nano letters 16 (2), 1097-1103, 2016 | 1175 | 2016 |
| First-principles calculation of transport properties of a molecular device M Di Ventra, ST Pantelides, ND Lang Physical review letters 84 (5), 979, 2000 | 1165 | 2000 |
| Room-temperature ferroelectricity in CuInP2S6 ultrathin flakes F Liu, L You, KL Seyler, X Li, P Yu, J Lin, X Wang, J Zhou, H Wang, H He, ... Nature communications 7 (1), 1-6, 2016 | 859 | 2016 |
| Improved inversion channel mobility for 4H-SiC MOSFETs following high temperature anneals in nitric oxide GY Chung, CC Tin, JR Williams, K McDonald, RK Chanana, RA Weller, ... IEEE Electron Device Letters 22 (4), 176-178, 2001 | 779 | 2001 |
| The electronic structure of impurities and other point defects in semiconductors ST Pantelides Reviews of Modern Physics 50 (4), 797, 1978 | 750 | 1978 |
| Monolayer PtSe2, a New Semiconducting Transition-Metal-Dichalcogenide, Epitaxially Grown by Direct Selenization of Pt Y Wang, L Li, W Yao, S Song, JT Sun, J Pan, X Ren, C Li, E Okunishi, ... Nano letters 15 (6), 4013-4018, 2015 | 675 | 2015 |
| Theory of hydrogen diffusion and reactions in crystalline silicon CG Van de Walle, PJH Denteneer, Y Bar-Yam, ST Pantelides Physical review B 39 (15), 10791, 1989 | 622 | 1989 |
| Effect of nitric oxide annealing on the interface trap densities near the band edges in the 4H polytype of silicon carbide GY Chung, CC Tin, JR Williams, K McDonald, M Di Ventra, ST Pantelides, ... Applied Physics Letters 76 (13), 1713-1715, 2000 | 590 | 2000 |
| Band gap engineering and layer-by-layer mapping of selenium-doped molybdenum disulfide Y Gong, Z Liu, AR Lupini, G Shi, J Lin, S Najmaei, Z Lin, AL Elías, ... Nano letters 14 (2), 442-449, 2014 | 580 | 2014 |
| Control of Doping by Impurity Chemical Potentials: Predictions for -Type ZnO Y Yan, SB Zhang, ST Pantelides Physical Review Letters 86 (25), 5723, 2001 | 510 | 2001 |
| Probing excitonic states in suspended two-dimensional semiconductors by photocurrent spectroscopy AR Klots, AKM Newaz, B Wang, D Prasai, H Krzyzanowska, J Lin, ... Scientific reports 4 (1), 6608, 2014 | 477 | 2014 |
| Large-Area Synthesis of Monolayer and Few-Layer MoSe2 Films on SiO2 Substrates X Lu, MIB Utama, J Lin, X Gong, J Zhang, Y Zhao, ST Pantelides, J Wang, ... Nano letters 14 (5), 2419-2425, 2014 | 432 | 2014 |
| Microscopic theory of atomic diffusion mechanisms in silicon R Car, PJ Kelly, A Oshiyama, ST Pantelides Physica B+ C 127 (1-3), 401-407, 1984 | 413 | 1984 |
| Defects in amorphous silicon: A new perspective ST Pantelides Physical review letters 57 (23), 2979, 1986 | 405 | 1986 |
| First-principles calculations of solubilities and doping limits: Li, Na, and N in ZnSe CG Van de Walle, DB Laks, GF Neumark, ST Pantelides Physical Review B 47 (15), 9425, 1993 | 402 | 1993 |
| Electronic structure, spectra, and properties of 4:2-coordinated materials. I. Crystalline and amorphous and ST Pantelides, WA Harrison Physical Review B 13 (6), 2667, 1976 | 389 | 1976 |
| Native defects and self-compensation in ZnSe DB Laks, CG Van de Walle, GF Neumark, PE Blöchl, ST Pantelides Physical Review B 45 (19), 10965, 1992 | 385 | 1992 |
