| Monolithic growth of ultrathin Ge nanowires on Si (001) JJ Zhang, G Katsaros, F Montalenti, D Scopece, RO Rezaev, C Mickel, ... Physical review letters 109 (8), 085502, 2012 | 115 | 2012 |
| Formation of Ge nanoripples on vicinal Si (1110): from Stranski-Krastanow seeds to a perfectly faceted wetting layer G Chen, B Sanduijav, D Matei, G Springholz, D Scopece, MJ Beck, ... Physical review letters 108 (5), 055503, 2012 | 50 | 2012 |
| Collective shape oscillations of SiGe islands on pit-patterned Si (001) substrates: a coherent-growth strategy enabled by self-regulated intermixing JJ Zhang, F Montalenti, A Rastelli, N Hrauda, D Scopece, H Groiss, ... Physical review letters 105 (16), 166102, 2010 | 37 | 2010 |
| Stability of Ge on Si (1 1 10) surfaces and the role of dimer tilting D Scopece, F Montalenti, MJ Beck Physical Review B 85 (8), 085312, 2012 | 33 | 2012 |
| Self-organized evolution of Ge/Si (001) into intersecting bundles of horizontal nanowires during annealing JJ Zhang, A Rastelli, OG Schmidt, D Scopece, L Miglio, F Montalenti Applied Physics Letters 103 (8), 2013 | 31 | 2013 |
| One-dimensional Ge nanostructures on Si (001) and Si (1 1 10): dominant role of surface energy F Montalenti, D Scopece, L Miglio Comptes Rendus. Physique 14 (7), 542-552, 2013 | 30 | 2013 |
| Local uniaxial tensile strain in germanium of up to 4% induced by SiGe epitaxial nanostructures M Bollani, D Chrastina, L Gagliano, L Rossetto, D Scopece, M Barget, ... Applied Physics Letters 107 (8), 2015 | 28 | 2015 |
| SOWOS: an open-source program for the three-dimensional Wulff construction D Scopece Journal of Applied Crystallography 46 (3), 811-816, 2013 | 24 | 2013 |
| Straining Ge bulk and nanomembranes for optoelectronic applications: a systematic numerical analysis D Scopece, F Montalenti, M Bollani, D Chrastina, E Bonera Semiconductor Science and Technology 29 (9), 095012, 2014 | 21 | 2014 |
| One-dimensional to three-dimensional ripple-to-dome transition for SiGe on vicinal Si (1 1 10) B Sanduijav, D Scopece, D Matei, G Chen, F Schäffler, L Miglio, ... Physical review letters 109 (2), 025505, 2012 | 17 | 2012 |
| Self-assembled in-plane Ge nanowires on rib-patterned Si (1 1 10) templates L Du, D Scopece, G Springholz, F Schäffler, G Chen Physical Review B 90 (7), 075308, 2014 | 11 | 2014 |
| Epilayer thickness and strain dependence of Ge (113) surface energies D Scopece, MJ Beck Physical Review B 87 (15), 155310, 2013 | 11 | 2013 |
| Mapping the Structure of Oxygen-Doped Wurtzite Aluminum Nitride Coatings from Ab Initio Random Structure Search and Experiments P Gasparotto, M Fischer, D Scopece, MO Liedke, M Butterling, A Wagner, ... ACS Applied Materials & Interfaces 13 (4), 5762-5771, 2021 | 6 | 2021 |
| Comment on:“An improved molecular dynamics potential for the Al–O system” Computational Materials Science 53, 483 (2012) D Scopece, BJ Thijsse Computational Materials Science 104, 143-146, 2015 | 5 | 2015 |
| Surface layer evolution caused by the bombardment with ionized metal vapor M Döbeli, A Dommann, X Maeder, A Neels, D Passerone, H Rudigier, ... Nuclear Instruments and Methods in Physics Research Section B: Beam …, 2014 | 4 | 2014 |
| Interpolating function of the strain relief of epitaxial quantum dots via an alternative morphological descriptor D Scopece Physical Review B 91 (19), 195318, 2015 | 1 | 2015 |
| Electron Excess Induced Defects in Materials: the Case of Oxygen in Wurtzite Aluminum Nitride P Gasparotto, M Fischer, D Scopece, MO Liedke, M Butterling, A Wagner, ... arXiv preprint arXiv:2009.13186, 2020 | | 2020 |
| Arsenic-induced faceted lateral nanoprisms array on Si (1 0 3) surface XJ Wang, D Scopece, JZ Wang, Y Fujikawa, CL Huang, T Sakurai, ... Applied Surface Science 463, 713-720, 2019 | | 2019 |
| Validation of an Embedded-Atom Copper Classical Potential via Bulk and Nanostructure Simulations M Kozlowski, D Scopece, J Janczak-Rusch, LPH Jeurgens, ... Diffusion Foundations 12, 74-92, 2017 | | 2017 |
| Silicon etch with chromium ions generated by a filtered or non-filtered cathodic arc discharge D Scopece, M Döbeli, D Passerone, X Maeder, A Neels, B Widrig, ... Science and Technology of advanced MaTerialS 17 (1), 20-28, 2016 | | 2016 |
Armando RastelliProfessor of Semiconductor Physics, Johannes Kepler University LinzVerified email at jku.at
