Suivre
Tsutomu Iwayama
Tsutomu Iwayama
Autres noms岩山 勉, Tsutomu Shimizu-Iwayama, T.S.Iwayama
Executive Vice-President | Professor, Aichi University of Education / 愛知教育大学
Adresse e-mail validée de auecc.aichi-edu.ac.jp
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Visible photoluminescence in Si+‐implanted silica glass
T Shimizu‐Iwayama, K Fujita, S Nakao, K Saitoh, T Fujita, N Itoh
Journal of Applied Physics 75 (12), 7779-7783, 1994
5221994
Visible photoluminescence in Si+‐implanted thermal oxide films on crystalline Si
T Shimizu‐Iwayama, S Nakao, K Saitoh
Applied Physics Letters 65 (14), 1814-1816, 1994
3751994
Optical properties of silicon nanoclusters fabricated by ion implantation
T Shimizu-Iwayama, N Kurumado, DE Hole, PD Townsend
Journal of Applied Physics 83 (11), 6018-6022, 1998
3171998
Luminescence from erbium-doped silicon nanocrystals in silica: Excitation mechanisms
AJ Kenyon, CE Chryssou, CW Pitt, T Shimizu-Iwayama, DE Hole, ...
Journal of Applied Physics 91 (1), 367-374, 2002
2532002
Evidence of energy coupling between Si nanocrystals and in ion-implanted silica thin films
CE Chryssou, AJ Kenyon, TS Iwayama, CW Pitt, DE Hole
Applied Physics Letters 75 (14), 2011-2013, 1999
1791999
Visible photoluminescence related to Si precipitates in Si+-implanted SiO2
T Shimizu-Iwayama, M Ohshima, T Niimi, S Nakao, K Saitoh, T Fujita, ...
Journal of Physics: Condensed Matter 5 (31), L375, 1993
1451993
Mechanism of photoluminescence of Si nanocrystals in SiO2 fabricated by ion implantation: the role of interactions of nanocrystals and oxygen
T Shimizu-Iwayama, DE Hole, IW Boyd
Journal of Physics: Condensed Matter 11 (34), 6595, 1999
1161999
Characterization of Si nanocrystals grown by annealing films with uniform concentrations of implanted Si
S Guha, SB Qadri, RG Musket, MA Wall, T Shimizu-Iwayama
Journal of Applied Physics 88 (7), 3954-3961, 2000
1112000
Excitons in crystalline and amorphous SiO2: formation, relaxation and conversion to Frenkel pairs
N Itoh, T Shimizu-Iwayama, T Fujita
Journal of non-crystalline solids 179, 194-201, 1994
721994
Visible photoluminescence from silicon nanocrystals formed in silicon dioxide by ion implantation and thermal processing
T Shimizu-Iwayama, Y Terao, A Kamiya, M Takeda, S Nakao, K Saitoh
Thin solid films 276 (1-2), 104-107, 1996
441996
Characteristic photoluminescence properties of Si nanocrystals in SiO2 fabricated by ion implantation and annealing
T Shimizu-Iwayama, T Hama, DE Hole, IW Boyd
Solid-State Electronics 45 (8), 1487-1494, 2001
412001
Enhanced luminescence from encapsulated silicon nanocrystals in SiO2 with rapid thermal anneal
TS Iwayama, T Hama, DE Hole, IW Boyd
Vacuum 81 (2), 179-185, 2006
352006
Correlation of microstructure and photoluminescence for nanometer-sized Si crystals formed in an amorphous SiO2 matrix by ion implantation
T Shimizu-Iwayama, Y Terao, A Kamiya, M Takeda, S Nakao, K Saitoh
Nanostructured materials 5 (3), 307-318, 1995
351995
Novel approach for synthesizing of nanometer-sized Si crystals in SiO2 by ion implantation and their optical characterization
T Shimizu-Iwayama, Y Terao, A Kamiya, M Takeda, S Nakao, K Saitoh
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1996
321996
Photoluminescence from nanoparticles of silicon embedded in an amorphous silicon dioxide matrix
T Shimizu-Iwayama, S Nakao, K Saitoh, N Itoh
Journal of Physics: Condensed Matter 6 (39), L601, 1994
311994
Laser‐induced reemission of silicon atoms implanted into quartz
T Shimizu, N Itoh, N Matsunami
Journal of applied physics 64 (7), 3663-3666, 1988
251988
Correlation of microstmcture and photoluminescence for nanometer-sized Si crystals formed in an amor-phous SiO2 matrix by ion implantation
TS Iwayama, Y Terao, A Kamiya
Nanostructural Materials 5, 307-318, 1995
211995
Optical properties of interacting Si nanoclusters in SiO2 fabricated by ion implantation and annealing
T Shimizu-Iwayama, DE Hole, PD Townsend
Nuclear Instruments and Methods in Physics Research Section B: Beam …, 1999
191999
Excess Si concentration dependence of the photoluminescence of Si nanoclusters in SiO2 fabricated by ion implantation
T Shimizu-Iwayama, DE Hole, PD Townsend
Journal of luminescence 80 (1-4), 235-239, 1998
191998
Laser photolysis studies of the reaction of chromium (III) octaethylporphyrin complex with triphenylphosphine and triphenylphosphine oxide
M Inamo, N Matsubara, K Nakajima, TS Iwayama, H Okimi, M Hoshino
Inorganic chemistry 44 (18), 6445-6455, 2005
182005
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