| Multi-layered MoS2 film formed by high-temperature sputtering for enhancement-mode nMOSFETs T Ohashi, K Suda, S Ishihara, N Sawamoto, S Yamaguchi, K Matsuura, ... Japanese Journal of Applied Physics 54 (4S), 04DN08, 2015 | 102 | 2015 |
| DNA manipulation and retrieval from an aqueous solution with micromachined nanotweezers G Hashiguchi, T Goda, M Hosogi, K Hirano, N Kaji, Y Baba, K Kakushima, ... Analytical Chemistry 75 (17), 4347-4350, 2003 | 96 | 2003 |
| Suppression of oxygen vacancy formation in Hf-based high-k dielectrics by lanthanum incorporation N Umezawa, K Shiraishi, S Sugino, A Tachibana, K Ohmori, K Kakushima, ... Applied Physics Letters 91 (13), 2007 | 79 | 2007 |
| X-ray photoelectron spectroscopy study of high-k CeO2/La2O3 stacked dielectrics J Zhang, H Wong, D Yu, K Kakushima, H Iwai AIP Advances 4 (11), 2014 | 69 | 2014 |
| Individual atomic imaging of multiple dopant sites in As-doped Si using spectro-photoelectron holography K Tsutsui, T Matsushita, K Natori, T Muro, Y Morikawa, T Hoshii, ... Nano Letters 17 (12), 7533-7538, 2017 | 68 | 2017 |
| Origin of flat band voltage shift in HfO2 gate dielectric with La2O3 insertion K Kakushima, K Okamoto, M Adachi, K Tachi, P Ahmet, K Tsutsui, N Sugii, ... Solid-State Electronics 52 (9), 1280-1284, 2008 | 68 | 2008 |
| Interface and electrical properties of La-silicate for direct contact of high-k with silicon K Kakushima, K Tachi, M Adachi, K Okamoto, S Sato, J Song, ... Solid-state electronics 54 (7), 715-719, 2010 | 61 | 2010 |
| Trapping characteristics of lanthanum oxide gate dielectric film explored from temperature dependent current–voltage and capacitance–voltage measurements B Sen, H Wong, J Molina, H Iwai, JA Ng, K Kakushima, CK Sarkar Solid-state electronics 51 (3), 475-480, 2007 | 59 | 2007 |
| Activated boron and its concentration profiles in heavily doped Si studied by soft x-ray photoelectron spectroscopy and Hall measurements K Tsutsui, T Matsuda, M Watanabe, CG Jin, Y Sasaki, B Mizuno, ... Journal of Applied Physics 104 (9), 2008 | 58 | 2008 |
| Nonlinear conductance quantization effects in CeOx/SiO2-based resistive switching devices E Miranda, S Kano, C Dou, K Kakushima, J Suñé, H Iwai Applied Physics Letters 101 (1), 2012 | 56 | 2012 |
| Effects of low temperature annealing on the ultrathin La2O3 gate dielectric; comparison of post deposition annealing and post metallization annealing JA Ng, Y Kuroki, N Sugii, K Kakushima, SI Ohmi, K Tsutsui, T Hattori, ... Microelectronic Engineering 80, 206-209, 2005 | 56 | 2005 |
| Low-Carrier-Density Sputtered MoS2 Film by Vapor-Phase Sulfurization K Matsuura, T Ohashi, I Muneta, S Ishihara, K Kakushima, K Tsutsui, ... Journal of Electronic Materials 47, 3497-3501, 2018 | 55 | 2018 |
| XPS study of the bonding properties of lanthanum oxide/silicon interface with a trace amount of nitrogen incorporation H Wong, H Iwai, K Kakushima, BL Yang, PK Chu Journal of the Electrochemical Society 157 (2), G49, 2009 | 55 | 2009 |
| EOT of 0.62 nm and high electron mobility in La-silicate/Si structure based nMOSFETs achieved by utilizing metal-inserted poly-Si stacks and annealing at high temperature T Kawanago, Y Lee, K Kakushima, P Ahmet, K Tsutsui, A Nishiyama, ... IEEE transactions on electron devices 59 (2), 269-276, 2011 | 53 | 2011 |
| Observation of band bending of metal/high-k Si capacitor with high energy x-ray photoemission spectroscopy and its application to interface dipole measurement K Kakushima, K Okamoto, K Tachi, J Song, S Sato, T Kawanago, ... Journal of Applied Physics 104 (10), 2008 | 53 | 2008 |
| Generation and transportation mechanisms for two-dimensional hole gases in GaN/AlGaN/GaN double heterostructures A Nakajima, P Liu, M Ogura, T Makino, K Kakushima, S Nishizawa, ... Journal of Applied Physics 115 (15), 2014 | 52 | 2014 |
| Challenges for future semiconductor manufacturing H Iwai, K Kakushima, H Wong International journal of high speed electronics and systems 16 (01), 43-81, 2006 | 52 | 2006 |
| Enhancement-Mode GaN MIS-HEMTs With LaHfOx Gate Insulator for Power Application YC Lin, YX Huang, GN Huang, CH Wu, JN Yao, CM Chu, S Chang, ... IEEE Electron Device Letters 38 (8), 1101-1104, 2017 | 51 | 2017 |
| GaN‐based complementary metal–oxide–semiconductor inverter with normally off Pch and Nch MOSFETs fabricated using polarisation‐induced holes and electron channels A Nakajima, S Kubota, K Tsutsui, K Kakushima, H Wakabayashi, H Iwai, ... IET Power Electronics 11 (4), 689-694, 2018 | 47 | 2018 |
| Room-temperature deposition of a poling-free ferroelectric AlScN film by reactive sputtering SL Tsai, T Hoshii, H Wakabayashi, K Tsutsui, TK Chung, EY Chang, ... Applied Physics Letters 118 (8), 2021 | 43 | 2021 |
