Dimosthenis Peftitsis

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Jacek RabkowskiKTH Royal Institute of Technology/Warsaw University of TechnologyVerified email at ee.pw.edu.pl
Hans-Peter NeeProfessor power electronicsVerified email at kth.se
Georg TolstoykthVerified email at kth.se
M BakowskiVerified email at acreo.se
Juan ColmenaresPhD - KTH Royal Institute of TechnologyVerified email at kth.se
Jang-Kwon LimSenior Research Scientist at RISE Research Institutes of SwedenABVerified email at ri.se
Andreas GiannakisNorwegian University of Science and Technology, NTNU, TrondheimVerified email at ntnu.no
Diane-Perle SadikPost Doctoral Fellow, Royal Institute of TechnologyVerified email at kth.se
Andrei BlinovPh.D.Verified email at ieee.org
Ole Christian SproNorwegian University of Science and TechnologyVerified email at sintef.no
Antonios AntonopoulosScientist, ABB Corporate Research CenterVerified email at se.abb.com
Dmitri VinnikovResearch Professor, Head of Power Electronics Group at TalTech, IEEE FellowVerified email at taltech.ee
Gard RødalThe Norwegian University of Science and TechnologyVerified email at ntnu.no
Mariusz ZdanowskiWarsaw University of TechnologyVerified email at ee.pw.edu.pl
Salvatore D'ArcoSINTEF Energy ResearchVerified email at sintef.no
Dr Konstantinos PapastergiouCERN Technology DepartmentVerified email at cern.ch
J. BielaLaboratory for High Power Electronic Systems (HPE), ETH ZurichVerified email at ethz.ch
Anastasios BalouktsisProfessor, Electrical and Mechanical Engineering , Mathematician, International Hellenic UniversityVerified email at ihu.gr
Yoganandam Vivekanandham Pushp...Norwegian University of Science and TechnologyVerified email at ntnu.no
Ilya GalkinRiga Technical UniversityVerified email at eef.rtu.lv

Dimosthenis Peftitsis

Professor of Power Electronics at NTNU, Norwegian University of Science and Technology

Verified email at ntnu.no - Homepage

Power Electronics Silicon Carbide DC breakers MV converters Reliability of power semiconductors


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Silicon carbide power transistors: A new era in power electronics is initiated J Rabkowski, D Peftitsis, HP Nee IEEE Industrial Electronics Magazine 6 (2), 17-26, 2012	444	2012
High-power modular multilevel converters with SiC JFETs D Peftitsis, G Tolstoy, A Antonopoulos, J Rabkowski, JK Lim, M Bakowski, ... IEEE Transactions on Power Electronics 27 (1), 28-36, 2011	232	2011
Short-circuit protection circuits for silicon-carbide power transistors DP Sadik, J Colmenares, G Tolstoy, D Peftitsis, M Bakowski, J Rabkowski, ... IEEE transactions on industrial electronics 63 (4), 1995-2004, 2015	171	2015
Challenges regarding parallel connection of SiC JFETs D Peftitsis, R Baburske, J Rabkowski, J Lutz, G Tolstoy, HP Nee IEEE Transactions on Power Electronics 28 (3), 1449-1463, 2012	138	2012
Gate and base drivers for silicon carbide power transistors: An overview D Peftitsis, J Rabkowski IEEE Transactions on Power Electronics 31 (10), 7194-7213, 2015	125	2015
Low-loss high-performance base-drive unit for SiC BJTs J Rabkowski, G Tolstoy, D Peftitsis, HP Nee IEEE Transactions on Power Electronics 27 (5), 2633-2643, 2011	106	2011
Experimental investigations of static and transient current sharing of parallel-connected silicon carbide MOSFETs DP Sadik, J Colmenares, D Peftitsis, JK Lim, J Rabkowski, HP Nee 2013 15th European Conference on Power Electronics and Applications (EPE), 1-10, 2013	105	2013
High-efficiency 312-kVA three-phase inverter using parallel connection of silicon carbide MOSFET power modules J Colmenares, D Peftitsis, J Rabkowski, DP Sadik, G Tolstoy, HP Nee IEEE Transactions on Industry Applications 51 (6), 4664-4676, 2015	70	2015
Parallel-operation of discrete SiC BJTs in a 6-kW/250-kHz DC/DC boost converter J Rabkowski, D Peftitsis, HP Nee IEEE transactions on power electronics 29 (5), 2482-2491, 2013	69	2013
MVDC distribution grids and potential applications: Future trends and protection challenges A Giannakis, D Peftitsis 2018 20th european conference on power electronics and applications (EPE'18 …, 2018	63	2018
An experimental evaluation of SiC switches in soft-switching converters P Ranstad, HP Nee, J Linner, D Peftitsis IEEE Transactions on Power Electronics 29 (5), 2527-2538, 2013	61	2013
Design steps toward a 40-kVA SiC JFET inverter with natural-convection cooling and an efficiency exceeding 99.5% J Rabkowski, D Peftitsis, HP Nee IEEE Transactions on Industry Applications 49 (4), 1589-1598, 2013	56	2013
Design steps towards a 40-kVA SiC inverter with an efficiency exceeding 99.5% J Rabkowski, D Peftitsis, HP Nee 2012 Twenty-Seventh Annual IEEE Applied Power Electronics Conference and …, 2012	56	2012
Analysis and experimental verification of the influence of fabrication process tolerances and circuit parasitics on transient current sharing of parallel-connected SiC JFETs JK Lim, D Peftitsis, J Rabkowski, M Bakowski, HP Nee IEEE Transactions on Power Electronics 29 (5), 2180-2191, 2013	55	2013
Self-powered gate driver for normally on silicon carbide junction field-effect transistors without external power supply D Peftitsis, J Rabkowski, HP Nee IEEE Transactions on Power Electronics 28 (3), 1488-1501, 2012	54	2012
On the design process of a 6-kVA quasi-Z-inverter employing SiC power devices M Zdanowski, D Peftitsis, S Piasecki, J Rabkowski IEEE Transactions on Power Electronics 31 (11), 7499-7508, 2016	47	2016
Auxiliary power supply for medium-voltage modular multilevel converters D Peftitsis, M Antivachis, J Biela 2015 17th European Conference on Power Electronics and Applications (EPE'15 …, 2015	44	2015
Optimized design of multi-MHz frequency isolated auxiliary power supply for gate drivers in medium-voltage converters OC Spro, P Lefranc, S Park, JM Rivas-Davila, D Peftitsis, OM Midtgård, ... IEEE Transactions on Power Electronics 35 (9), 9494-9509, 2020	41	2020
A new MPPT method for Photovoltaic generation systems based on Hill Climbing algorithm D Peftitsis, G Adamidis, A Balouktsis 2008 18th International Conference on Electrical Machines, 1-5, 2008	38	2008
A discretized proportional base driver for silicon carbide bipolar junction transistors G Tolstoy, D Peftitsis, J Rabkowski, PR Palmer, HP Nee IEEE Transactions on Power Electronics 29 (5), 2408-2417, 2013	37	2013

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