Kirsten Moselund
Kirsten Moselund
IBM Research
Bestätigte E-Mail-Adresse bei zurich.ibm.com
TitelZitiert vonJahr
Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si
H Schmid, M Borg, K Moselund, L Gignac, CM Breslin, J Bruley, D Cutaia, ...
Applied Physics Letters 106 (23), 233101, 2015
1332015
Vertical III–V nanowire device integration on Si (100)
M Borg, H Schmid, KE Moselund, G Signorello, L Gignac, J Bruley, ...
Nano letters 14 (4), 1914-1920, 2014
1192014
InAs–Si nanowire heterojunction tunnel FETs
KE Moselund, H Schmid, C Bessire, MT Bjork, H Ghoneim, H Riel
IEEE Electron Device Letters 33 (10), 1453-1455, 2012
1182012
Si–InAs heterojunction Esaki tunnel diodes with high current densities
MT Björk, H Schmid, CD Bessire, KE Moselund, H Ghoneim, S Karg, ...
Applied Physics Letters 97 (16), 163501, 2010
1102010
Fabrication and characterization of gate-all-around silicon nanowires on bulk silicon
V Pott, KE Moselund, D Bouvet, L De Michielis, AM Ionescu
IEEE transactions on nanotechnology 7 (6), 733-744, 2008
682008
InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs
H Riel, KE Moselund, C Bessire, MT Björk, A Schenk, H Ghoneim, ...
2012 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2012
542012
Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High-Gate Dielectric
KE Moselund, MT Bjork, H Schmid, H Ghoneim, S Karg, E Lortscher, ...
IEEE Transactions on Electron Devices 58 (9), 2911-2916, 2011
522011
Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
KE Moselund, P Dobrosz, S Olsen, V Pott, L De Michielis, D Tsamados, ...
2007 IEEE International Electron Devices Meeting, 191-194, 2007
492007
The high-mobility bended n-channel silicon nanowire transistor
KE Moselund, M Najmzadeh, P Dobrosz, SH Olsen, D Bouvet, ...
IEEE transactions on electron devices 57 (4), 866-876, 2010
422010
Comparison of VLS grown Si NW tunnel FETs with different gate stacks
KE Moselund, H Ghoneim, MT Bjork, H Schmid, S Karg, E Lortscher, ...
2009 Proceedings of the European Solid State Device Research Conference, 448-451, 2009
412009
Lateral InAs/Si p-type tunnel FETs integrated on Si—Part 2: Simulation study of the impact of interface traps
S Sant, K Moselund, D Cutaia, H Schmid, M Borg, H Riel, A Schenk
IEEE Transactions on Electron Devices 63 (11), 4240-4247, 2016
382016
Tunneling and occupancy probabilities: How do they affect tunnel-FET behavior?
L De Michielis, L Lattanzio, KE Moselund, H Riel, AM Ionescu
IEEE Electron Device Letters 34 (6), 726-728, 2013
382013
Capacitor-less memory and abrupt switch based on hysteresis characteristics in punch-through impact ionization mos transistor (PI-MOS)
K Moselund, MA Ionescu, V Pott, M Kayal
US Patent App. 12/230,557, 2009
362009
Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si
M Borg, H Schmid, KE Moselund, D Cutaia, H Riel
Journal of Applied Physics 117 (14), 144303, 2015
352015
High-mobility GaSb nanostructures cointegrated with InAs on Si
M Borg, H Schmid, J Gooth, MD Rossell, D Cutaia, M Knoedler, ...
ACS nano 11 (3), 2554-2560, 2017
332017
In situ doping of catalyst-free InAs nanowires
H Ghoneim, P Mensch, H Schmid, CD Bessire, R Rhyner, A Schenk, ...
Nanotechnology 23 (50), 505708, 2012
312012
Punch-through impact ionization MOSFET (PIMOS): From device principle to applications
KE Moselund, D Bouvet, V Pott, C Meinen, M Kayal, AM Ionescu
Solid-State Electronics 52 (9), 1336-1344, 2008
312008
Vertical InAs-Si gate-all-around tunnel FETs integrated on Si using selective epitaxy in nanotube templates
D Cutaia, KE Moselund, M Borg, H Schmid, L Gignac, CM Breslin, S Karg, ...
IEEE Journal of the Electron Devices Society 3 (3), 176-183, 2015
302015
Fabrication of vertical InAs-Si heterojunction tunnel field effect transistors
H Schmid, KE Moselund, MT Björk, M Richter, H Ghoneim, CD Bessire, ...
69th Device Research Conference, 181-182, 2011
292011
Ballistic one-dimensional InAs nanowire cross-junction interconnects
J Gooth, M Borg, H Schmid, V Schaller, S Wirths, K Moselund, M Luisier, ...
Nano letters 17 (4), 2596-2602, 2017
282017
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