Kirsten Moselund
Kirsten Moselund
IBM Research
Verified email at
Cited by
Cited by
Template-assisted selective epitaxy of III–V nanoscale devices for co-planar heterogeneous integration with Si
H Schmid, M Borg, K Moselund, L Gignac, CM Breslin, J Bruley, D Cutaia, ...
Applied Physics Letters 106 (23), 2015
Vertical III–V nanowire device integration on Si (100)
M Borg, H Schmid, KE Moselund, G Signorello, L Gignac, J Bruley, ...
Nano letters 14 (4), 1914-1920, 2014
InAs–Si nanowire heterojunction tunnel FETs
KE Moselund, H Schmid, C Bessire, MT Bjork, H Ghoneim, H Riel
IEEE Electron Device Letters 33 (10), 1453-1455, 2012
High-speed III-V nanowire photodetector monolithically integrated on Si
S Mauthe, Y Baumgartner, M Sousa, Q Ding, MD Rossell, A Schenk, ...
Nature communications 11 (1), 4565, 2020
Si–InAs heterojunction Esaki tunnel diodes with high current densities
MT Björk, H Schmid, CD Bessire, KE Moselund, H Ghoneim, S Karg, ...
Applied Physics Letters 97 (16), 2010
Fabrication and characterization of gate-all-around silicon nanowires on bulk silicon
V Pott, KE Moselund, D Bouvet, L De Michielis, AM Ionescu
IEEE transactions on nanotechnology 7 (6), 733-744, 2008
Lateral InAs/Si p-type tunnel FETs integrated on Si—Part 2: Simulation study of the impact of interface traps
S Sant, K Moselund, D Cutaia, H Schmid, M Borg, H Riel, A Schenk
IEEE Transactions on Electron Devices 63 (11), 4240-4247, 2016
A hybrid III–V tunnel FET and MOSFET technology platform integrated on silicon
C Convertino, CB Zota, H Schmid, D Caimi, L Czornomaz, AM Ionescu, ...
nature electronics 4 (2), 162-170, 2021
Room-temperature lasing from monolithically integrated GaAs microdisks on silicon
S Wirths, BF Mayer, H Schmid, M Sousa, J Gooth, H Riel, KE Moselund
ACS nano 12 (3), 2169-2175, 2018
High-mobility GaSb nanostructures cointegrated with InAs on Si
M Borg, H Schmid, J Gooth, MD Rossell, D Cutaia, M Knoedler, ...
ACS nano 11 (3), 2554-2560, 2017
Mechanisms of template-assisted selective epitaxy of InAs nanowires on Si
M Borg, H Schmid, KE Moselund, D Cutaia, H Riel
Journal of Applied Physics 117 (14), 2015
InAs-Si heterojunction nanowire tunnel diodes and tunnel FETs
H Riel, KE Moselund, C Bessire, MT Björk, A Schenk, H Ghoneim, ...
2012 International Electron Devices Meeting, 16.6. 1-16.6. 4, 2012
Silicon Nanowire Tunnel FETs: Low-Temperature Operation and Influence of High-Gate Dielectric
KE Moselund, MT Bjork, H Schmid, H Ghoneim, S Karg, E Lortscher, ...
IEEE transactions on electron devices 58 (9), 2911-2916, 2011
III–V heterostructure tunnel field-effect transistor
C Convertino, CB Zota, H Schmid, AM Ionescu, KE Moselund
Journal of Physics: Condensed Matter 30 (26), 264005, 2018
Ballistic one-dimensional InAs nanowire cross-junction interconnects
J Gooth, M Borg, H Schmid, V Schaller, S Wirths, K Moselund, M Luisier, ...
Nano letters 17 (4), 2596-2602, 2017
Complementary III–V heterojunction lateral NW tunnel FET technology on Si
D Cutaia, KE Moselund, H Schmid, M Borg, A Olziersky, H Riel
2016 IEEE Symposium on VlSI Technology, 1-2, 2016
Bended Gate-All-Around Nanowire MOSFET: a device with enhanced carrier mobility due to oxidation-induced tensile stress
KE Moselund, P Dobrosz, S Olsen, V Pott, L De Michielis, D Tsamados, ...
2007 IEEE International Electron Devices Meeting, 191-194, 2007
Scaled resistively-coupled VO2 oscillators for neuromorphic computing
E Corti, B Gotsmann, K Moselund, AM Ionescu, J Robertson, S Karg
Solid-State Electronics 168, 107729, 2020
Waveguide coupled III-V photodiodes monolithically integrated on Si
P Wen, P Tiwari, S Mauthe, H Schmid, M Sousa, M Scherrer, M Baumann, ...
Nature Communications 13 (1), 909, 2022
Comparison of VLS grown Si NW tunnel FETs with different gate stacks
KE Moselund, H Ghoneim, MT Bjork, H Schmid, S Karg, E Lortscher, ...
2009 Proceedings of the European Solid State Device Research Conference, 448-451, 2009
The system can't perform the operation now. Try again later.
Articles 1–20